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    CHN 732 Search Results

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    CHN 732 Price and Stock

    Seiko Epson Corporation TG2016SKA 49.5800M-ECHNNMB

    TCXO Oscillators TG2016SKA 49.5800M-ECHNNMB: TCXO 1.8V 0.5PPM-40-105C NON O/E BULK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TG2016SKA 49.5800M-ECHNNMB
    • 1 $6.21
    • 10 $5.87
    • 100 $5.43
    • 1000 $4.48
    • 10000 $4.48
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    Seiko Epson Corporation TG2016SKA 26.0000M-ECHNNNB

    TCXO Oscillators TG2016SKA 26.0000M-ECHNNNB: TCXO 1.8V +/-0.5PPM-40-105C NON O/E BULK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TG2016SKA 26.0000M-ECHNNNB
    • 1 $6.21
    • 10 $5.87
    • 100 $5.43
    • 1000 $4.48
    • 10000 $4.48
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    Seiko Epson Corporation TG2016SKA 38.4000M-ECHNNMB

    TCXO Oscillators TG2016SKA 38.4000M-ECHNNMB: TCXO 1.8V 0.5PPM-40-105C NON O/E BULK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TG2016SKA 38.4000M-ECHNNMB
    • 1 $6.21
    • 10 $5.87
    • 100 $5.43
    • 1000 $4.48
    • 10000 $4.48
    Get Quote

    Seiko Epson Corporation TG2016SKA 26.0000M-ECHNNMB

    TCXO Oscillators TG2016SKA 26.0000M-ECHNNMB: TCXO 1.8V +/-0.5PPM-40-105C NON O/E BULK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TG2016SKA 26.0000M-ECHNNMB
    • 1 $6.21
    • 10 $5.87
    • 100 $5.43
    • 1000 $4.48
    • 10000 $4.48
    Get Quote

    Seiko Epson Corporation TG2016SKA 26.0000M-CCHNNM5

    TCXO Oscillators TG2016SKA 26.0000M-CCHNNM5: TCXO 3.3V +/-0.5PPM-40-105C NON O/E 3K TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TG2016SKA 26.0000M-CCHNNM5
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    • 1000 -
    • 10000 $0.927
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    CHN 732 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CHN 550

    Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
    Text: R&S ZNC/ZND Vector Network Analyzers User Manual ;xíÇ2 User Manual Test & Measurement 1173.9557.02 ─ 26 This manual describes the following vector network analyzer types: ● R&S®ZNC3 (2 ports, 9 kHz to 3 GHz, N connectors), order no. 1311.6004K12


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    6004K12 ZNC-B10 ZN-B14 ZNC-B19 ZNC3-B22 ZNC-K19 VXI-11 CHN 550 CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent PDF

    ST CHN 510

    Abstract: 83C97 chn 809 chn 809 ST
    Text: 83C97 T e chn o log y, In co rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface and Serial Port PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation S ym bol indentifies product as A u to D U P L E X device. Description


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    83C97 10BASE-T 83C97 10BASET) ST CHN 510 chn 809 chn 809 ST PDF

    chn 809

    Abstract: chn 809 ST Transistor TT 2246 transistor chn 037 MO40 TT 2246 transistor capacitor JA8 KMA Series 232 pin diagram of BC 547 SABRE 408
    Text: 83C95 T e chn o log y, Inco rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters And AUI PRELIMINARY October 1994 S E E Q A u to D U P L E X D esignation Symbol indentifies product as AutoDUPLEX device. D escription The 83C95 is a highly integrated analog interface 1C for


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    83C95 10BASE-T 83C95 10BASET) 10BASET chn 809 chn 809 ST Transistor TT 2246 transistor chn 037 MO40 TT 2246 transistor capacitor JA8 KMA Series 232 pin diagram of BC 547 SABRE 408 PDF

    Transistor TT 2246

    Abstract: transistor chn 911 TT 2246 transistor jm31a pulse electronics era transformer transistor chn 037 chn 809 S4744
    Text: SEEQ T e chn o log y, Inco rp o rate d 83C96 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation Sym bol indentifies product as A u to D U P L E X device. Description The 83C96 is a highly integrated analog interface 1C for


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    83C96 10BASE-T 83C96 10BASET) 10BASET Transistor TT 2246 transistor chn 911 TT 2246 transistor jm31a pulse electronics era transformer transistor chn 037 chn 809 S4744 PDF

    1/CHN 326

    Abstract: No abstract text available
    Text: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)


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    SST39SF020 1/CHN 326 PDF

    Untitled

    Abstract: No abstract text available
    Text: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection


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    SST38UF166 PDF

    CHN 512

    Abstract: CHN 314 1/CHN 852
    Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)


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    SST39SF512 CHN 512 CHN 314 1/CHN 852 PDF

    chn 348

    Abstract: CHN 314 chn 317 CHN 852 chn 440
    Text: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


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    SST37VF020 32-Pin SST37VF020 chn 348 CHN 314 chn 317 CHN 852 chn 440 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/


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    SST32LH802 128Kx16 SST32LH802 PDF

    Untitled

    Abstract: No abstract text available
    Text: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:


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    SST39SF010 PDF

    Untitled

    Abstract: No abstract text available
    Text: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:


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    SST39VF080Q_ SST39VF080Q PDF

    27721

    Abstract: No abstract text available
    Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:


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    SST39VF016Q_ SST39VF016Q Multi58-4276 27721 PDF

    oasis

    Abstract: SST39VF400 SST39VF400 read code
    Text: 4 Megabit 256K x 16-Bit Multi-Purpose Flash f SST39VF400 r Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • 2 KWord sectors Uniform 32 KWord blocks Fast Read Access Time:


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    16-Bit) SST39VF400 oasis SST39VF400 SST39VF400 read code PDF

    CHN 345 X

    Abstract: No abstract text available
    Text: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


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    SST37VF040 32-Pin SST37VF040 CHN 345 X PDF

    CHN 847

    Abstract: chn 734
    Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • • - • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption


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    SST29EE010 SST29LE010 SST29VE010 and-1102 CHN 847 chn 734 PDF

    CHN 847

    Abstract: 29EE512
    Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512 / SST29LE512 / SST29VE512 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • 5.0V-only for SST29EE512 3.0-3.6V for SST29LE512 2.7-3.6V for SST29VE512 Fast Read Access Time - 5.0V-only operation: 70 and 90 ns


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    SST29EE512 SST29LE512 SST29VE512 CHN 847 29EE512 PDF

    Untitled

    Abstract: No abstract text available
    Text: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


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    SST37VF512 32-Pin SST37VF512 pro-657-0204 PDF

    Untitled

    Abstract: No abstract text available
    Text: f r 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • Uniform 32 KWord blocks Fast Read Access Time: - • Uniform 2 KWord sectors


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    16-Bit) SST39VF200 PDF

    TEKELEC te 306

    Abstract: 30601
    Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020A 3.0-3.6V for the SST29LE020A 2.7-3.6V for the SST29VE020A


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    SST29EE020A SST29LE020A SST29VE020A Reliability526-1102 TEKELEC te 306 30601 PDF

    actron ab

    Abstract: 11a18 CHN 949 VF800
    Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention


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    16-Bit) SST39VF800Q SST39VF800 SST39VF800Q actron ab 11a18 CHN 949 VF800 PDF

    CHN 329

    Abstract: DP 904C
    Text: 21Ü 16 Megabit 1M x 16-Bit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information FEATURES: • Organized as 1 M X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention


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    16-Bit) SST39VF160Q SST39VF160 SST39VF160Q CHN 329 DP 904C PDF

    chn 347

    Abstract: No abstract text available
    Text: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


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    SST37VF010 32-Pin SST37VF010 chn 347 PDF

    Untitled

    Abstract: No abstract text available
    Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)


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    SST29EE512A SST29LE512A SST29VE512A SST29EE512A SST29LE512A SST29EE512A/29LE512A/29VE512A PDF

    Ff-352

    Abstract: Ff352 HE 301 chn 511 CHN 549 chn 440
    Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: •


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    16-Bit) SST39LH160Q SST39LH160 SST39LH160Q Ff-352 Ff352 HE 301 chn 511 CHN 549 chn 440 PDF