CHN 804 diode
Abstract: CHN 709 CHN 633 diode chn 529 SEMITOP 2 Package CHN 633 Diodes Semikron Semitop sk 70 kq diode PFZ 15A semikron sk 50 et 12 chn 725
Text: SEMITOP Cool Components SEMITOP® "Cool Alternative" Features • Low Rth junction to heatsink For isolation the SEMITOP uses a ceramic substrate. The evenly distributed pressure and the evenly distributed placement of the chips on the ceramic substrate results in a reduced
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therm86
D-90253
CHN 804 diode
CHN 709
CHN 633 diode
chn 529
SEMITOP 2 Package
CHN 633 Diodes
Semikron Semitop sk 70 kq
diode PFZ 15A
semikron sk 50 et 12
chn 725
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semikron sk 50 et 12
Abstract: CHN 346 IGBT CHN 633 diode Semikron Semitop sk 70 kq 12 CHN 709 Semikron sk 51 Semikron Semitop sk 70 kq um 3567 CHN 633 Diodes semikron sk 23 gd 063
Text: SEMITOP Cool Components SEMITOP® "Coole Alternative" Merkmale einer von SEMIKRON aufgebrachten Wärmeleitschicht bezo- • Niedriger Wärmewiderstand gen werden. Dabei entfällt für den SEMITOP verwendet die bewähr- Anwender die aufwendige und te DCB Keramik zur elektrischen
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D-90253
semikron sk 50 et 12
CHN 346 IGBT
CHN 633 diode
Semikron Semitop sk 70 kq 12
CHN 709
Semikron sk 51
Semikron Semitop sk 70 kq
um 3567
CHN 633 Diodes
semikron sk 23 gd 063
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rx1a 1244
Abstract: CHN 616 ice 8040 ADSP-21065L h 945 p 4000 CMOS texas instruments 0x200014 F15-F8 PM48 multi timer Chn 835
Text: ADSP-21065L SHARC DSP User’s Manual Revision 2.0, July 2003 Part Number 82-001833-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2003 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written consent
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ADSP-21065L
I-127
I-128
16-bit
rx1a 1244
CHN 616
ice 8040
h 945 p
4000 CMOS texas instruments
0x200014
F15-F8
PM48 multi timer
Chn 835
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mdd 2605
Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900
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element-14
element14
mdd 2605
HCPL 1458 8 pin opto
KS0108 128X64 graphical LCD
mdd 2601
transistor chn 952
hitachi INVC 618
Data Vision P135
H4 led smd headlight bulb
transistor CHN 64 946
transistor chn 943
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1/CHN 326
Abstract: No abstract text available
Text: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
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SST39SF020
1/CHN 326
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Untitled
Abstract: No abstract text available
Text: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection
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SST38UF166
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CHN 512
Abstract: CHN 314 1/CHN 852
Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
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SST39SF512
CHN 512
CHN 314
1/CHN 852
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chn 348
Abstract: CHN 314 chn 317 CHN 852 chn 440
Text: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF020
32-Pin
SST37VF020
chn 348
CHN 314
chn 317
CHN 852
chn 440
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Untitled
Abstract: No abstract text available
Text: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:
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SST39SF010
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Untitled
Abstract: No abstract text available
Text: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
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SST39VF080Q_
SST39VF080Q
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27721
Abstract: No abstract text available
Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
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SST39VF016Q_
SST39VF016Q
Multi58-4276
27721
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CHN 345 X
Abstract: No abstract text available
Text: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF040
32-Pin
SST37VF040
CHN 345 X
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CHN 602
Abstract: CHN 847
Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020 3.0-3.6V for the SST29LE020 2.7-3.6V for the SST29VE020
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SST29EE020
SST29LE020
SST29VE020
CHN 602
CHN 847
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CHN 847
Abstract: chn 734
Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • • - • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption
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SST29EE010
SST29LE010
SST29VE010
and-1102
CHN 847
chn 734
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Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF512
32-Pin
SST37VF512
pro-657-0204
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TEKELEC te 306
Abstract: 30601
Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020A 3.0-3.6V for the SST29LE020A 2.7-3.6V for the SST29VE020A
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SST29EE020A
SST29LE020A
SST29VE020A
Reliability526-1102
TEKELEC te 306
30601
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actron ab
Abstract: 11a18 CHN 949 VF800
Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention
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16-Bit)
SST39VF800Q
SST39VF800
SST39VF800Q
actron ab
11a18
CHN 949
VF800
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CHN 329
Abstract: DP 904C
Text: 21Ü 16 Megabit 1M x 16-Bit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information FEATURES: • Organized as 1 M X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention
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16-Bit)
SST39VF160Q
SST39VF160
SST39VF160Q
CHN 329
DP 904C
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chn 347
Abstract: No abstract text available
Text: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF010
32-Pin
SST37VF010
chn 347
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Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)
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SST29EE512A
SST29LE512A
SST29VE512A
SST29EE512A
SST29LE512A
SST29EE512A/29LE512A/29VE512A
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Ff-352
Abstract: Ff352 HE 301 chn 511 CHN 549 chn 440
Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: •
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16-Bit)
SST39LH160Q
SST39LH160
SST39LH160Q
Ff-352
Ff352
HE 301
chn 511
CHN 549
chn 440
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CHN 949
Abstract: tr/pcb-2-1/TRANSISTOR chn 602
Text: 21Ü 4 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH041_ Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:
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SST31LH041_
CHN 949
tr/pcb-2-1/TRANSISTOR chn 602
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chn 839
Abstract: No abstract text available
Text: H im TECHNOLOGY DMUML B IL i^ S I Final Electrical Specifications LTC1542 M ic ro p o w e r O p A m p a n d C o m p a ra to r A p r il 1 9 9 8 FEATURES DESCFHFTIOn • Quiescent Current: 5|jATyp ■ Outputs Swing Rail-to-Rail ■ Low Op Amp Offset Voltage: 700|llV Max
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LTC1542
T1635
LT2078/LT2079
14-Lead
200kHzGBW
LT2178/LT2179
85kHz
LTC1541
chn 839
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Untitled
Abstract: No abstract text available
Text: 21Ü 2 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH021_ Advance Information FEATURES: • Organized as 256K x 8 flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:
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SST31LH021_
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