chn 442
Abstract: chn 437 chn 439 chn 436 lz smd marking
Text: MICRON TE CHN OLOGY INC 3.7E- D • blllSMi 0001530 *} MICRON ■ MT5C6408 8830 t|CHt*MCtV MC MILITARY SRAM 8K X 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • SMD 5962-85525, -89691 • JAN M38510/292 « RAD-tolerant (consult factory)
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MT5C6408
M38510/292
28L/300
32L/LCC
C-12A)
MIL-STD-883
chn 442
chn 437
chn 439
chn 436
lz smd marking
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PDF
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Untitled
Abstract: No abstract text available
Text: Tfi MICRON TE CHN OLOGY INC 6111549 MICRON TECHNOLOGY INC DE^blllSMI 68C 00060 OOQOGtaO T D T-41-55 IICRON TECHNOLOGY, INC. 655,360 Element Solid-State Image Sensor SYSTEMS GROUP 1447 Tyrell Lane Boise, Idaho 83706 208 386-3800 I TWX 910-970-5973 FEATURES
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T-41-55
IS6410
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PDF
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5180A-2
Abstract: "transient capture" cx20116 2N5836 EL2004 HA2539 HA2540 5180A 77100
Text: @SPT signal môcÊssm^cHNÔœèîÈs FEATURES 150 MSPS Conversion Rate 1/2 LSB Linearity Preamplifier Com parator Design Typical Power Dissipation < 2.2 Watts HADC77 I OO 8 -B IT , 1 5 0 M S P S F L A S H A /D C O N V E R T E R APPLICATIONS Digital Oscilloscopes
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HADC77100
5180A-2
"transient capture"
cx20116
2N5836
EL2004
HA2539
HA2540
5180A
77100
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PDF
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CHN 550
Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
Text: R&S ZNC/ZND Vector Network Analyzers User Manual ;xíÇ2 User Manual Test & Measurement 1173.9557.02 ─ 26 This manual describes the following vector network analyzer types: ● R&S®ZNC3 (2 ports, 9 kHz to 3 GHz, N connectors), order no. 1311.6004K12
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Original
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6004K12
ZNC-B10
ZN-B14
ZNC-B19
ZNC3-B22
ZNC-K19
VXI-11
CHN 550
CHN 545
chn 710
CHN 712
chn 538
CHN 431
CHN 709
CHN 741
chn 738
chn 648 equivalent
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PDF
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chn+335
Abstract: No abstract text available
Text: 1 Megabit 128K x 8 Multi-Purpose Flash SST39VF010 Preliminary Specifications FEATURES: • • • Organized as 128K X 8 Fast Sector Erase and Byte Program: Single 2.7-3.6V Read and Write Operations - Superior Reliability - • Low Power Consumption: - •
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SST39VF010
MO-142
chn+335
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PDF
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1/CHN 326
Abstract: No abstract text available
Text: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
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SST39SF020
1/CHN 326
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PDF
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CHN 816
Abstract: chn 823 chn 817 ST CHN 510 1300-CSM BT225 CHN 823 diode CHN 510 SLC-500 ST CHN t4
Text: Print I/O Ink, Damp and Register Modules Catalog Number 1300-GDI, 1300-CCM, 1300-PWM and 1300-CSM Technical Data Typical Print I/O Arrangement Dedicated Purpose and Functionality. Print I/O is a t0WTC0St modular I/O system for specific applications that offer all the functions
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1300-GDI,
1300-CCM,
1300-PWM
1300-CSM)
130Q-TD001A-US-P
1300-TD001
CHN 816
chn 823
chn 817
ST CHN 510
1300-CSM
BT225
CHN 823 diode
CHN 510
SLC-500
ST CHN t4
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PDF
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CHN 525
Abstract: TRANSISTOR chn 602 SCR PIN CONFIGURATION CHN 035 chn 725 chn 729 chn 038 TRANSISTOR CHN 736 CHN T4 chn 720 chn 728
Text: 2-Channel, 2.35 V to 5.25 V 1 MSPS, 10-/12-Bit ADCs AD7912/AD7922 Preliminary Technical Data FUNCTIONAL BLOCK DIAGRAM FEATURES VDD Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power: 4.8 mW typ at 1 MSPS with 3 V supplies 15.5mW typ at 1 MSPS with 5 V supplies
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10-/12-Bit
AD7912/AD7922
EVAL-AD7922
AD7912/AD7922
PR04351
CHN 525
TRANSISTOR chn 602
SCR PIN CONFIGURATION CHN 035
chn 725
chn 729
chn 038 TRANSISTOR
CHN 736
CHN T4
chn 720
chn 728
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 Megabit 512K x 8-Bit Multi-Purpose Flash SST39VF040Q Advance Information FEATURES: • Organized as 512 K x 8 • • Single 2.7-3.6V Read and Write Operations • • V • Superior Reliability - • Uniform 4 KByte sectors Block Erase Capability (8 blocks)
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SST39VF040Q
SST39VF040Q
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PDF
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ST CHN t4
Abstract: a115 da hi ng sst39vf040
Text: 4 Megabit 512K x 8 Multi-Purpose Flash SST39VF040 Prelim inary Specifications FEATURES: • Organized as 512K X 8 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
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SST39VF040
MO-142
ST CHN t4
a115 da hi ng
sst39vf040
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PDF
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Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 Multi-Purpose Flash SST39VF512 Preliminary Specifications FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 2.7-3.6V Read and Write Operations - Superior Reliability - • Low Power Consumption: - •
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SST39VF512
MO-142
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PDF
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CHN 142
Abstract: CHN T4
Text: 2 Megabit 256K x 8 Multi-Purpose Flash SST39VF020 Preliminary Sp ecifica tions FEATURES: • Organized as 256K X 8 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
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SST39VF020
MO-142
CHN 142
CHN T4
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PDF
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Untitled
Abstract: No abstract text available
Text: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection
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SST38UF166
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PDF
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CHN 512
Abstract: CHN 314 1/CHN 852
Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
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SST39SF512
CHN 512
CHN 314
1/CHN 852
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PDF
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chn 348
Abstract: CHN 314 chn 317 CHN 852 chn 440
Text: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF020
32-Pin
SST37VF020
chn 348
CHN 314
chn 317
CHN 852
chn 440
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PDF
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CHN 525
Abstract: chn 038 TRANSISTOR chn 734 TRANSISTOR chn 602 CHN 602 CHN 804 chn 728 CHN T4 chn 725 CHN 736
Text: 2-Channel, 2.35 V to 5.25 V, 1 MSPS, 10-/12-Bit ADCs AD7912/AD7922 FUNCTIONAL BLOCK DIAGRAM FEATURES VDD Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power: 4.8 mW typ at 1 MSPS with 3 V supplies 15.5mW typ at 1 MSPS with 5 V supplies
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10-/12-Bit
AD7912/AD7922
10-/12-BIT
EVAL-AD7922
D04351
CHN 525
chn 038 TRANSISTOR
chn 734
TRANSISTOR chn 602
CHN 602
CHN 804
chn 728
CHN T4
chn 725
CHN 736
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PDF
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Untitled
Abstract: No abstract text available
Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/
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SST32LH802
128Kx16
SST32LH802
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PDF
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Untitled
Abstract: No abstract text available
Text: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:
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SST39SF010
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PDF
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Untitled
Abstract: No abstract text available
Text: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
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SST39VF080Q_
SST39VF080Q
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PDF
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27721
Abstract: No abstract text available
Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
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SST39VF016Q_
SST39VF016Q
Multi58-4276
27721
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PDF
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oasis
Abstract: SST39VF400 SST39VF400 read code
Text: 4 Megabit 256K x 16-Bit Multi-Purpose Flash f SST39VF400 r Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • 2 KWord sectors Uniform 32 KWord blocks Fast Read Access Time:
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16-Bit)
SST39VF400
oasis
SST39VF400
SST39VF400 read code
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PDF
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CHN 345 X
Abstract: No abstract text available
Text: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF040
32-Pin
SST37VF040
CHN 345 X
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PDF
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SST39VF400Q
Abstract: 39VF400
Text: 4 Megabit 256K x 16-Bit Multi-Purpose Flash SST39VF400Q / SST39VF400 A dvance Inform ation FEATURES: • Organized as 256 K X 16 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Word Program: • V ddq
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16-Bit)
SST39VF400Q
SST39VF400
SST39VF400Q
39VF400
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PDF
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CHN 847
Abstract: chn 734
Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • • - • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption
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SST29EE010
SST29LE010
SST29VE010
and-1102
CHN 847
chn 734
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PDF
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