1B smd
Abstract: 211C4 311C2 ECE relay smd marking 1C 6 PIN smd 1C E155181 211b2 smd marking 1b 1A smd
Text: Rely on ECE’s Relays, and You Always Relax! MOS RELAY EPR SERIES E155181 R DIP SMD SOP • FEATURES z No EMI/RFI generation z High reliability z No moving parts z Low drive power requirement (TTL/CMOS compatible) z Low On-state resistance z 3750 Voltage input/output isolation (1500V isolation for SO-package)
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E155181
1B smd
211C4
311C2
ECE relay
smd marking 1C 6 PIN
smd 1C
211b2
smd marking 1b
1A smd
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EPR61A40T
Abstract: EPR61A40M D-82178 EPR61A20T epr61a40 EPR61A40S relay zettler EPR61B40T top mark smd mos smd 1C
Text: NO. EXCEL CELL ELECTRONIC CO., LTD. Edition S P E C I FI C A T I O N 2 PAGE 1/11 A30956 7 EPR MOS RELAY 6PIN 1. FEATURES 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 No EMI/RFI Generation High reliability No moving parts Low drive power requirement (TTL/CMOS Compatible)
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A30956
E155181
D-82178
EPR61A40T
EPR61A40M
EPR61A20T
epr61a40
EPR61A40S
relay zettler
EPR61B40T
top mark smd mos
smd 1C
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Untitled
Abstract: No abstract text available
Text: MOS RELAY EPR Series telcona b est in e l e c t r o n ic co m po n en ts EPR SERIES EPR SERIES DtP W E155181 R RELAY SOP SMD APPLICATIONS FEATURES • • • • No EMI/RFI Generation High reliability No moving parts Low drive power requirement (TTL/CMOS Compatible)
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E155181
DIP/S408
411C208
411C358
411C408
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a36 smd transistor
Abstract: transistor smd 4z
Text: ÖUALITY'TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D 74fe.bfl51 0003431 3 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS < != > CNY17-1/1Z CN Y17-3/3Z C N Y17-2/2Z CN Y17-4/4Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED
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bfl51
CNY17-1/1Z
Y17-3/3Z
Y17-2/2Z
Y17-4/4Z
CNY17
CNY17-1:
CNY17-2:
CNY17-3:
CNY17-4:
a36 smd transistor
transistor smd 4z
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SMD Transistor AFR
Abstract: No abstract text available
Text: 3UALITY T E C H N O L O G I E S CO RP QUALITY TECHNOLOGIES O E7E D‘ 74bbfl51 Û D 0 3 S S 3 b PHOTOTRANSISTOR OPTOCOUPLER T-41-83 MCT277 PACKAGE DIMENSIONS The MCT277 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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74bbfl51
T-41-83
MCT277
MCT277
C2090
15pseconds
MCT9001
SMD Transistor AFR
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MBF9321
Abstract: FT125 MBF9311 MBF9332 high frequency mag amps high pass band filter MBF9317 MBF9323 MBF9341 MBF9362
Text: Oki Semiconductor MBF93xx_ Surface Acoustic Wave SAW Filters D E S C R IP TIO N The new MBF93xx Surface Acoustic Wave (SAW) filters utilize OKI's third generation design and m anu facturing technology to achieve a high out of band attenuation, low insertion loss, and low m anufactur
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MBF93xx_
MBF93xx
MBF9342
733-4S.
MBF9362
b72424Ã
MBF9321
FT125
MBF9311
MBF9332
high frequency mag amps
high pass band filter
MBF9317
MBF9323
MBF9341
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PDF
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SMD a3a
Abstract: No abstract text available
Text: E2P X>51-27-34 OKI electronic components OCM4D8, 4D9 SERIES_ Dual-Channel/Package General-purpose Type Optical MOS Relay For AC/DC Load GENERAL DESCRIPTION The OCM4C';8 and OCM4 9 Series are dual-channel, optical MOS relays for A C /D C load. The device is available in the same form factor as single-channel devices, w ith an 8-pin DIP and SMDtvpe (gull-wing package.
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OCM42&
tOCM43d/
SMD a3a
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PDF
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D-82178
Abstract: 41A06S 41A06 EPR411A064101 relay zettler Excel Cell Electronic zettler 800 medical EPR411A064 EPR211A064001 41A06S1
Text: NO. EXCEL CELL ELECTRONIC CO., LTD. Edition S P E C I FI C A T I O N 2 PAGE 1/7 A31060 3 EPR MOS RELAY 4PIN Low Cost Version 1. FEATURES 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 No EMI/RFI Generation High reliability No moving parts Low drive power requirement (TTL/CMOS Compatible)
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A31060
E155181
D-82178
41A06S
41A06
EPR411A064101
relay zettler
Excel Cell Electronic
zettler 800 medical
EPR411A064
EPR211A064001
41A06S1
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PDF
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41A06S
Abstract: 41A06 EPR411A064 41A40T EPR411A064000 EPR411A064100 41A20T 41A06T 41B40S smd 1C
Text: NO. EXCEL CELL ELECTRONIC CO., LTD. Edition S P E C I FI C A T I O N 2 PAGE 1/16 A31060 3 EPR MOS RELAY 4PIN 1. FEATURES 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 No EMI/RFI Generation High reliability No moving parts Low drive power requirement (TTL/CMOS Compatible)
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A31060
E155181
D-82178
41A06S
41A06
EPR411A064
41A40T
EPR411A064000
EPR411A064100
41A20T
41A06T
41B40S
smd 1C
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PDF
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Untitled
Abstract: No abstract text available
Text: HYPER-RED LH T774 Superbright GaAIAs Reverse Gullwing TOPLED Lamp SIEMENS Dimensions in Inches mm .118(3.0) .102(2.6) .039 (1.0)_ .035 (0.9) .090 (2.3). .083(2.1) .134 (3.4) .118(3.0) FEATURES • Reverse gullwingTOPLED: surface mount LED lamp • White package, colorless clear window
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18-pln
fl535t
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PDF
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EPR82A40T
Abstract: EPR82A40s EPR82A06M EPR82A40m epr82a40 EPR81C40T EPR82B40M EPR82A06S EPR82A06T EPR82A
Text: NO. EXCEL CELL ELECTRONIC CO., LTD. Edition S P E C I FI C A T I O N 2 PAGE 1/20 A31061 3 EPR MOS RELAY 8PIN 1. FEATURES 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 No EMI/RFI Generation High reliability No moving parts Low drive power requirement (TTL/CMOS Compatible)
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A31061
E155181
D-82178
EPR82A40T
EPR82A40s
EPR82A06M
EPR82A40m
epr82a40
EPR81C40T
EPR82B40M
EPR82A06S
EPR82A06T
EPR82A
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PDF
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SMD CODE PACKAGE SOT25
Abstract: Diodes smd f5 sot36 RB751H-40 RB110 RB111
Text: Schottky Barrier Diodes lo = 1 A to 0.1 A, single or array, low or low leakage. V f, • F o r Rectifier A bsolute maximum ratings Ta = 25eC Part No. lo V rm (V) Ifsm (A) 60Hz1 ^ (A) Electrica Tj Tstg (°C) cc) characteristics VF (V Max. (Ta = 25°C ) Ir ( ¿î A ) Max.
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60Hz1
SMD CODE PACKAGE SOT25
Diodes smd f5
sot36
RB751H-40
RB110
RB111
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KLH1501
Abstract: smd optocoupler cop 200 klh1524 lh1056 opto smd 4pin 15 2mm laptop schematic diagram KLH1516 LH1056A kaqy414s KLH1524A
Text: KLH1056/KLHl056A cosmo HIGH VOLTAGE, Unit: mm Tolerance: FEATURES l Normally Open, Single Pole Single Throw l Control 350 VAC or DC Voltage 0 Switch 130 mA Loads 0 LED Control Current, 2mA 0 Low ON-Resistance 0 dvldt, >500 Vfms 0 Isolation Test Voltage, 3750 VACRMs
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KLH1056
KAQW210TS
KLH1501
smd optocoupler cop 200
klh1524
lh1056
opto smd 4pin 15 2mm
laptop schematic diagram
KLH1516
LH1056A
kaqy414s
KLH1524A
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PDF
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1262C
Abstract: No abstract text available
Text: L H 1262C B /C A C SIEM EN S Dual Photovoltaic MOSFET Driver Preliminary Data Sheet FEATURES • High open circuit voltage • High short circuit current • High I/O isolation voltage • Logic compatible input • High reliability D im ensions in Inches mm
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1262C
18-pln
typ135
fl535t
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PDF
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Untitled
Abstract: No abstract text available
Text: IL329 SIEMENS Optically Coupled Telecom Switch Preliminary Data Sheet FEATURES • Solid state relay and AC input • Optocoupler Package— Single 18 Pin • I/O Isolation, 2500 VRMS • Surface Mountable • Optocoupler - Bidirectional C urrent Detection
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IL329
IL329
18-pln
fl535t
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PDF
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NEC MARKING
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS jUPC2762T, jUPC2763T 3V-BIAS, MEDIUM-POWER HIGH-FREQUENCY SiMMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION ¿¡PC2762T and ¿¡PC2763T are silicon m onolithic integrated circuits designed for the transm ission TX stage
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jUPC2762T,
jUPC2763T
PC2762T
PC2763T
S60-00-1
NEC MARKING
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PDF
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74ls189 ram
Abstract: 74LS189 27lS03
Text: i - A " — — Page 0001 01/16/89 11:16:37 Tx: AM27LS03 TED - Ft: AVO FMT » S e r v ic e s,M e. A m 2 7LS0 3 ^ 64-Bit Low-Power Inverting-Output Bipolar RAM > 3 DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16 word X 4-bit low-power Schottky RAMs
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AM27LS03
64-Bit
74LS189.
application011
WF001110
74ls189 ram
74LS189
27lS03
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PDF
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Untitled
Abstract: No abstract text available
Text: UM10499 230 V and 120 V reference design using UBA20260 Rev. 1 — 30 September 2011 User manual Document information Info Content Keywords UBA20260, step-dimmable, half-bridge CFL driver Abstract This document describes the correct use of the UBA20260 step-dimmable
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UM10499
UBA20260
UBA20260,
UBA20260
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Untitled
Abstract: No abstract text available
Text: UM10498 230 V and 120 V reference design using UBA20261/2 Rev. 1 — 30 September 2011 User manual Document information Info Content Keywords UBA20261, UBA20262, step-dimmable, half-bridge CFL driver Abstract This document describes the correct use of the UBA20261/2
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UM10498
UBA20261/2
UBA20261,
UBA20262,
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smd transistor marking 12W
Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
Text: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain,Low Gain,Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB@2GHz 0.3
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MCH4009
17dB2GHz
SC-72
SC-43
SC-51
O-226
SC-71
O-126
O-92MOD
smd transistor marking 12W
SMD transistor Marking 13w
SMD type Marking 13w
SPM5001
SOT89 PNP marking GA
ec3h04b
smd transistor 12W 52
SMA4205
6c 6pin
SGD103
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PDF
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SMD CODE list mosfet 6pin
Abstract: ci 6pin smd
Text: IL420/ IL4208 VISHAY Vishay Semiconductors Triac Optocoupler 600 V/ 800V Features • • • • • High input sensitivity IFT = 2.0 mA 600/800 V blocking voltage 300 mA on-state current High static dV/dt 10 kV/µs Inverse parallel SCRs provide commutating
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IL420/
IL4208
i179035
E52744
D-74025
29-Oct-03
SMD CODE list mosfet 6pin
ci 6pin smd
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PDF
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SMD CODE list mosfet 6pin
Abstract: ci 6pin smd commutation circuit il4208
Text: IL420/ IL4208 VISHAY Vishay Semiconductors Optocoupler, Phototriac Output, High dV/dt, Low Input Current Features • • • • • High input sensitivity IFT = 2.0 mA 600/800 V blocking voltage 300 mA on-state current High static dV/dt 10 kV/µs Inverse parallel SCRs provide commutating
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IL420/
IL4208
i179035
E52744
VDE0884)
D-74025
20-Nov-03
SMD CODE list mosfet 6pin
ci 6pin smd
commutation circuit
il4208
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PDF
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Untitled
Abstract: No abstract text available
Text: VZÀ WS128K32-20XX I/I/HITE /M IC R O E L E C T R O N IC S 128Kx32 SRAM MODULE Organized as 128Kx32; User C on fig u rab le as 256Kx16 or 512Kx8 FEATURES C om m ercial, Industrial and M i lita r y T e m p era ture Ranges 5 V o lt Po w e r Supply • Access Tim e 20nS
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WS128K32-20XX
128Kx32
87-09H
128Kx32;
256Kx16
512Kx8
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PDF
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upc2762t
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS «PC2762T, «PC2763T 3V-BIAS, MEDIUM-POWER HIGH-FREQUENCY SiMMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION ¿¿PC2762T and ¿¿PC2763T are silicon m onolithic integrated circuits designed for the transm ission TX stage
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OCR Scan
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uPC2762T
uPC2763T
PC2762T
PC2763T
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PDF
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