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    CIRCUIT CON BY 139F Search Results

    CIRCUIT CON BY 139F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    CIRCUIT CON BY 139F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74L574

    Abstract: trivector meter block diagram IEC-1268 D2284 free 74ls74 pin configurations block diagram smps ADSST-2185KST-133 IEC-687 AD73360 ADSST-EM-3035
    Text: a FEATURES IEC 687, Class 0.5 and Class 0.2 Accuracy ANSI C12.1 IEC 1268, Requirements for Reactive Power Configurable as Import/Export or Import Only Simultaneous Measurement of: Active Power and Energy—Import and Export Reactive Power and Energy Apparent Power


    Original     		PDF MS-013AE MS-026AED-HD 74L574 trivector meter block diagram IEC-1268 D2284 free 74ls74 pin configurations block diagram smps ADSST-2185KST-133 IEC-687 AD73360 ADSST-EM-3035

    74L574

    Abstract: No abstract text available
    Text: a FEATURES IEC 687, Class 0.5 and Class 0.2 Accuracy ANSI C12.1 IEC 1268, Requirements for Reactive Power Configurable as Import/Export or Import Only Simultaneous Measurement of: Active Power and Energy—Import and Export Reactive Power and Energy Apparent Power


    Original     		PDF ADSST-EM-3035-BST ADSST-EM-3035-KST ADSST-EM-3035K ADSST-2185KST-133 ADSST-73360AR 100-Lead RU-28 SU-100) MS-026AED-HD 74L574

    R02 motorola 2903

    Abstract: 108 046f AMCC STS-192
    Text: S19201CAI12 Indus Datasheet Revision 2.5 March 10, 2003 Dear customer, Thank you for choosing an AMCC device. We appreciate your confidence in our products. To ensure your complete satisfaction with our products and technologies, we have prepared this publication to provide you additional information, which will help you use the device more efficiently. This


    Original     		PDF S19201CAI12 S19201CAI12: STS-192 R02 motorola 2903 108 046f AMCC STS-192

    SA285

    Abstract: sa317 AM29LV256MH94R
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with Enhanced VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


    Original     		PDF Am29LV256M 16-Bit/32 128-word/256-byte 8-word/16-byte LAC064, SA285 sa317 AM29LV256MH94R

    Untitled

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte

    Untitled

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte 27631A5

    A 27631

    Abstract: 1128 marking s29gl512 GL256N S29GL128N S29GL256N S29GL512N A24-A0
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte 27631A1 27631A1 A 27631 1128 marking s29gl512 GL256N S29GL128N S29GL256N S29GL512N A24-A0

    A 27631

    Abstract: 27631 s29gl512 S29GLxxxN 1128 marking GL256N S29GL128N S29GL256N S29GL512N Spansion S29GL256N
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 27631A4 A 27631 27631 s29gl512 1128 marking GL256N S29GL128N S29GL256N S29GL512N Spansion S29GL256N

    Spansion S29GL256N

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte 27631A3 Spansion S29GL256N

    A 27631

    Abstract: 27631 1128 marking GL256N S29GL128N S29GL256N S29GL512N SA4871 SA417 24A000
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte 27631A1 27631A1 A 27631 27631 1128 marking GL256N S29GL128N S29GL256N S29GL512N SA4871 SA417 24A000

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11

    LM373

    Abstract: MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P
    Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica­ tions and consumer-oriented circuits to precision instrumentation and computer designs.


    OCR Scan     		PDF 92260-Fontenay-Aux-Roses 25956F HX3866 LM373 MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


    OCR Scan     		PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401

    LM1808

    Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
    Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.


    OCR Scan     		PDF LM741 MIL-M-38510, M-38510/ 10101BCC. MIL-M-38510 L-M-38510 LM1808 LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor

    EQUIVALENT TIC 160D

    Abstract: MHI-002 MM5311 equivalent transistor bf 175 LM5522 DM7441A lm1514 LH0032
    Text: m Edge Index by Product Family Here is the new INTERFACE catalog from National Semiconductor Corporation. It contains complete information on all of National's INTERFACE products whether they be Linear, Digital, or MOS. It is the first such catalog in the industry and we hope it becomes your most im portant INTERFACE guide.


    OCR Scan     		PDF

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


    OCR Scan     		PDF

    feme relay FT A 001 20 10

    Abstract: feme cm a 001 12 feme relay
    Text: SOT-1 E Device SONET STS-1 Overhead Terminator TXC-03011 DATA SHEET Programmable STS-1 or STS-N modes Receive bit-serial STS-1 signal input to the Line Side using external reference frame pulse input for STS-N applications Transmit bit-serial STS-1 signal output from the Line


    OCR Scan     		PDF TXC-03011 TXC-03001 TXC-03001B TXC-03011-MB feme relay FT A 001 20 10 feme cm a 001 12 feme relay

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485