MT3809G
Abstract: DEK13
Text: Installation and Operation Manual X-VA-MT3809G-MT3810G-eng Part Number: 541B182AAG December, 2014 Models MT3809G & MT3810G Brooks Models MT3809G and MT3810G Metal Tube Variable Area Flowmeters Model MT3809G General Purpose Housing Model MT3809G Model MT3809G
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Original
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X-VA-MT3809G-MT3810G-eng
541B182AAG
MT3809G
MT3810G
MT3809G
DEK13
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DG180-191
Abstract: DG180 DG182 DG183 DG184 DG185 DG186 DG187 DG191 electronic switches
Text: glifi DG180-191 High-Speed Driver W ith Junction FET Switches FEATURES GENERAL DESCRIPTION • Constant ON-resistance for signals to ± 1 OV DG182, 18 5,188,191 , to ±7.5V (all devices]! • ±15V power supplies • <2nA leakage from signal channel in both ON and
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DG180-191
DG182,
150ns,
10MHz
DG180
DG191
DG180,
O-100)
DG183,
DG186,
DG180-191
DG182
DG183
DG184
DG185
DG186
DG187
electronic switches
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construction of varactor diode
Abstract: HTL LOGIC 100S IH5040 IH5140 varactor diode 24V 1H18 diode zener c55
Text: DMÜ^DIL IH181 Series Low-Power, High Level Analog Gates c u rre n t fro m FEATURES th e T T L log ic o u tp u t elem ent; th u s th e e ffe c tiv e fa n o u t, if one were to drive o n ly solid state • Switches 2 0 V p p Signals • Quiescent C urre n t Less th a n 100 fiA
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IH181
130ns
250ns
-30fi
IH181/191
DG181/191
IH5040,
IH5140
IH184MJE
construction of varactor diode
HTL LOGIC
100S
IH5040
varactor diode 24V
1H18
diode zener c55
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DGM181-191
Abstract: DG181
Text: DGM181-191 DGM181-191 High-Speed CMOS Analog Switch GENERAL DESCRIPTION FEATURES The DGM181 family of CMOS monolithic switches utilizes intersii’s latch-free junction isolated processing to combine the speed of the hybrid DG181 family with the reliability and
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DGM181-191
DGM181
DG181
10/jA
200pA
STAND-191
DGM181/182
DGM181/182
DGM181-191
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Untitled
Abstract: No abstract text available
Text: Intersil Hlgh-Rellablllty Products DG180-191 High Relid|Sfffy High- Speed Driver 0 \ 3P ^ With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog'jfates consist of g^s 2 or 4 N-channel junction-type field-effect transistors JFET
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DG180-191
DG180
DG191
DG186/187/188
DG189/190/191
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STR 6656
Abstract: STR 6656 diagram STR w 6656 li-on charger lion charger IEC-1000-4-11 lead acid overcharge protection circuit diagram en60335-1 en60335-2-29 sicherheits fw72
Text: LIEFERVORSCHRIFT SPECIFICATION FRIWO FRIWO Gerätebau GmbH V o n -Lieb ig -Str. 11 D-48346 Ostbevern Tel.: 02532/81-0 Fax: 02532/81-112 h ttp ://w w w .friwo.de MPP15 - LION 4 Firmo / Distribution Company G e rä te ty p / Typ F W 7 2 1 9 /LI0 N 4 A rtik e l- N r. / O rder-No.
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D-48346
MPP15
STR 6656
STR 6656 diagram
STR w 6656
li-on charger
lion charger
IEC-1000-4-11
lead acid overcharge protection circuit diagram
en60335-1 en60335-2-29
sicherheits
fw72
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PDF
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DIODE 24B
Abstract: DIODE S2v DIODE in s2v Mitsubishi transistor circuit diagram for je 182 g
Text: MITSUBISHI TRANSISTOR MODULES QM800HA-24B j HIGH POWER SWITCHING USE [ INSULATED TYPE | QM800HA-24B • • • • • Ic Collector c u rre n t. 800A V cex Collector-em itter v o lta g e 1200V hFE DC current g a in . 750
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QM800HA-24B
QM800HA-24B
E80276
E80271
DIODE 24B
DIODE S2v
DIODE in s2v
Mitsubishi transistor
circuit diagram for je 182 g
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PDF
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asx340
Abstract: je 243 PLK3210 109-149 IQX160 JE 33 IQX128B IQX240B IQX320 se 336
Text: Introduction T his m anual provides the inform ation needed to configure th e IQ X Fam ily devices using the JT A G interface. It is in ten d ed fo r u sers w ho p lan to w rite th eir ow n code to configure the IQ X devices. In addition, this m anual explains
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Untitled
Abstract: No abstract text available
Text: Introduction This manual provides the information needed to configure the IQX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the IQX devices. In addition, this manual explains how the boundary scan features implemented in the IQX devices can be used
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IQX320,
IQX240B,
IQX160
IQX128B.
IQX160
IQX128B
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PDF
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BZ-2AW842444T
Abstract: No abstract text available
Text: M IC R O 5W ITCH FREEPORT ILLINOIS. U S A A DIVISION OF B Z-2A W 842444T SWITCH-BASIC HONEYWELL F E D . M FC . C O D E «182» -.3 8 0 ± .0 3 0 1 .026 ±.O I5 !— .3 2 8 MAX. PRETRAVEL. NO 2 C IR C U IT DIAGRAM < k o CD .7 9 0 ± .0 2 0 2 .5 0 R .6 6 5 ± .0 3 0
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C063663
69351-D
BZ-2AW842444T
BZ-2AW842444T
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Untitled
Abstract: No abstract text available
Text: Preliminary W182 ill# ICW 0RKS Full Feature Peak Reducing EMI Solution Features Key Specifications Supply Voltages: IC W O R KS PREMIS fam ily offering VDD = 3.3 V ±5% o rV D D = 5V±10% 8MHz<Fin<28MHz Generates an EMI optimized clocking signal at the output
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28MHz
300ps
14-pin
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PDF
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bpx28
Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten
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KM641003A
Abstract: KM641003A-12 KM641003A-15
Text: CMOS SRAM KM641003A 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM641003A-12 : 200 mA(Max.) KM641003A-15 : 190 mA(Max.)
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KM641003A
KM641003A-12
KM641003A-15
KM641003A-17
KM64t003A-20:
KM641003AJ
32-SOJ-400
KM641003AT
32-TSOP2-4QOF
KM641003A
KM641003A-12
KM641003A-15
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Untitled
Abstract: No abstract text available
Text: B U R R - B R O W N <i [ OPA177 ] Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW OFFSET VOLTAGE: 25|iV max PRECISION INSTRUMENTATION • LOW DRIFT: 0.3|W/°C DATA ACQUISITION • HIGH OPEN-LOOP GAIN: 130dB min TEST EQUIPMENT • LOW QUIESCENT CURRENT: 1.5mA typ
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OPA177
130dB
OP-07,
OP-77,
OP-177,
AD707,
OPA177
17313LS
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Untitled
Abstract: No abstract text available
Text: SN54LVC07A, SN74LVC07A HEX BUFFERS/DRIVERS WITH OPEN-DRAIN OUTPUTS SCAS595A - OCTOBER 1997 - REVISED NOVEMBER 1997 EPIC Enhanced-Performance Implanted M SN 54LVC07A . J O R W P A C K A G E SN74LVC07A . Q. P Q yvO R PW PA C K A G E CMOS Submicron Process
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SN54LVC07A,
SN74LVC07A
SCAS595A
300-mil
LVC07A
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Untitled
Abstract: No abstract text available
Text: Introduction This manual provides the information needed to configure the PSX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the PSX devices. In addition, this manual explains how the boundary scan features implemented in the PSX devices can be used
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PSX160,
PSX128B
PSX96B.
has27
DDD11SG
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PDF
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Untitled
Abstract: No abstract text available
Text: LOW -DROPOUT REGULATORS — H IG H EFFICIENCY co co £ * > CC Q co O < Q -Z. Ü LU co < -z. LU ‘ BYPASS fixed regulators or ADJUST (A8405SLH-ADJ only). This document contains information on a produ ct under developm ent. A llegro M icrosystem s, Inc. reserves the right to change or discontinue this
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A8405SLH
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sn74181
Abstract: 7B222 SN74LS1S1 SN741S1
Text: TYPES Sttfi4H1, SN54LS181, SKS4SH1. TTL MSI s m tm su m s« « , s i m i ARITHMETIC LOGIC UNITS/FUNCTION GENEftATOftS B U LLE TIN NO. DL-S 7611831. DECEMBER 197» - REVISED OCTOBER 1976 SN841B1, SN54LS1S1, SN54S181 . . . J OR W PACKAGE SN741S1, SN74LS1S1.8N74S181 . . . J O H N PACKAGE
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SN54LS181,
SN841B1,
SN54LS1S1,
SN54S181
SN741S1,
SN74LS1S1
8N74S181
7S222
sn74181
7B222
SN741S1
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PDF
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AD8182AM
Abstract: AD8182S
Text: ANALOG DEVICES FEATURES Fully Buffered Inputs and O utputs Fast Channel Switching: 10 ns High Speed > 750 MHz Bandwidth -3 dB 750 V /| jls Slew Rate Fast Settling Tim e of 10 ns to 0.1% Low Power: 3.8 mA (AD8180), 6.8 mA (AD8182) Excellent Video Specifications (R|_ = 2 k ii)
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AD8180)
AD8182)
AD8180/AD8182
AD8182AM
AD8182S
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PDF
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transistor f151
Abstract: tms 374 biss 0001 je 243 JE 33 p626 PSX128B PSX96B I-CUBE 51P124
Text: Introduction This manual provides the information needed to configure the PSX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the PSX devices. In addition, this manual explains how the boundary scan features implemented in the PSX devices can be used
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PSX128B
PSX96B.
0IIIG1152
transistor f151
tms 374
biss 0001
je 243
JE 33
p626
PSX96B
I-CUBE
51P124
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PDF
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Untitled
Abstract: No abstract text available
Text: BiMOS II 12-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS Designed primarily for use with vacuum-fluorescent displays, the UCN5811A and UCN5811A-1 Smart Power BiMOS II drivers feature low-output saturation voltages and high output switching speed. These devices contain CMOS shift registers, data latches, and control cir
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12-BIT
UCN5811A
UCN5811A-1
UGN5811A
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Untitled
Abstract: No abstract text available
Text: K 00 O G 1-Channel H igh-Speed D river w ith SPDT JFET Sw itches designed for . . • JJ S ilic o n ix BENEFITS • Eliminates Large Signal Error o < 2 nA Leakage from Signal Channel in Both ON and O F F States • Higher Bandwidth Switching Capabilities o Cross-Talk and O FF Isolation > 55 d8
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AHCT32
Abstract: SN54AHCT32 SN74AHCT32
Text: SN54AHCT32, SN74AHCT32 QUADRUPLE 2-INPUT POSITIVE-OR GATES S C LS 248E - O C TO BE R 1995 - REVISED JU LY 1997 • Inputs Are TTL-Voltage Compatible • EPIC Enhanced-Performance Implanted CMOS Process • High Latch-Up Immunity Exceeds 250 mA Per JESD 17
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SN54AHCT32,
SN74AHCT32
SCLS248E
300-mil
AHCT32
SN54AHCT32
SN74AHCT32
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PDF
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burr brown Heat sink
Abstract: No abstract text available
Text: BU R R - BROW N [ OPA628 1 Low Distortion Wideband OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • EXCELLENT DIFFERENTIAL GAIN: 0.015% BROADCAST QUALITY VIDEO • EXCELLENT DIFFERENTIAL PHASE: 0.015° MEDICAL IMAGING • LOW DISTORTION: 90dB SFDR LOW NOISE PREAMPLIFIER
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OPA628
60dBm
160MHz
30MHz
OPA628
PA628
12-Bit,
burr brown Heat sink
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PDF
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