Sumitomo CRM1076NS
Abstract: SUMITOMO g600 CRM1076NS Compound R3589DR-S TISPA79R241DR-S J-STD-22 R3680DR-S crm1076 bourns R3679DR-S
Text: THYRISTOR SURGE PROTECTORS August 2007 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team PCN Tracking Number 45 New Assembly/Test Site & Green Mold Compound Bourns is qualifying an additional assembly/test site for manufacture of overvoltage protectors in
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Original
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MS012,
TISP3082F3DR-S
TISP3125F3DR-S
TISP3150F3DR-S
TISP3180F3DR-S
TISP3290F3DR-S
TISP3380F3DR-S
TISP4072F3DR-S
TISP4125F3DR-S
TISP4150F3DR-S
Sumitomo CRM1076NS
SUMITOMO g600
CRM1076NS
Compound
R3589DR-S
TISPA79R241DR-S
J-STD-22
R3680DR-S
crm1076
bourns R3679DR-S
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PDF
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KDV143F
Abstract: TFSC
Text: SEMICONDUCTOR KDV143F TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. FEATURES CATHODE MARK Low Operation Current. Small Package . C 1 D 2 B A E MAXIMUM RATING Ta=25 DIM A B C D E F MILLIMETERS _ 0.05 1.00 +
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KDV143F
100MHz
200pF,
100nA
KDV143F
TFSC
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PDF
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KDV143F
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV143F TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. FEATURES CATHODE MARK Low Operation Current. Small Package . C 1 D 2 B A E MAXIMUM RATING Ta=25 DIM A B C D E F MILLIMETERS _ 0.05 1.00 +
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Original
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KDV143F
100nA
100MHz
KDV143F
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PDF
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KDP628UL
Abstract: No abstract text available
Text: SEMICONDUCTOR KDP628UL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. A FEATURES D 1 6 E Array type 6 Diode in one package B Low Capacitance Low Series resistance 12 ) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage
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Original
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KDP628UL
ULP-12
100nA
100MHz
KDP628UL
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PDF
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HY5DV281622DT-4
Abstract: No abstract text available
Text: HY5DV281622DT 128M 8Mx16 DDR SDRAM HY5DV281622DT This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Aug. 2003
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Original
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HY5DV281622DT
8Mx16)
HY5DV281622DT-4/5/6
HY5DV281622DT-33/36
400mil
66pin
HY5DV281622DT-4
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PDF
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HY5DU561622CTP
Abstract: No abstract text available
Text: HY5DU561622CTP 256M 16Mx16 DDR SDRAM HY5DU561622CTP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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Original
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HY5DU561622CTP
16Mx16)
HY5DU561622CTP
456-bit
400mil
66pin
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PDF
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HY5DV
Abstract: No abstract text available
Text: HY5DV281622DTP 128M 8Mx16 DDR SDRAM HY5DV281622DTP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DV281622DTP
8Mx16)
HY5DV281622
728-bit
8Mx16
400mil
HY5DV
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PDF
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Sumitomo CRM1076NS
Abstract: SUMITOMO g600 G600 mold compound r3589 J-STD-22 G600 JEDEC 95 CRM1076NS TISP4072F3DR-S r36041
Text: THYRISTOR SURGE PROTECTORS August 2007 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team PCN Tracking Number 45 New Assembly/Test Site & Green Mold Compound Bourns is qualifying an additional assembly/test site for manufacture of overvoltage protectors in
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Original
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MS012,
TISP3082F3DR-S
TISP3125F3DR-S
TISP3150F3DR-S
TISP3180F3DR-S
TISP3290F3DR-S
TISP3380F3DR-S
TISP4072F3DR-S
TISP4125F3DR-S
TISP4150F3DR-S
Sumitomo CRM1076NS
SUMITOMO g600
G600 mold compound
r3589
J-STD-22
G600
JEDEC 95
CRM1076NS
TISP4072F3DR-S
r36041
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PDF
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HY5DS283222BF
Abstract: HY5DS283222BFP-33
Text: HY5DS283222BF P 128M(4Mx32) GDDR SDRAM HY5DS283222BF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DS283222BF
4Mx32)
1HY5DS283222BF
350Mhz
HY5DS283222
728-bit
144ball
HY5DS283222BFP-33
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PDF
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XR-T5683AID-F
Abstract: XRT5683A
Text: PRODUCT CHANGE NOTICE PCN PART NUMBER(S): PCN No.: 09-0909-02 Refer to Attachment A DATE: October 9, 2009 PART DESCRIPTION: See www.exar.com LEVEL OF CHANGE: [ ] Level I, Customer Approval. [X] Level II, Customer Information. PRODUCT ATTRIBUTE AFFECTED:
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G0006-6
XRT5683AID-F
XRT5683AIDTR-F
XRT8000ID-F
XRT8000IDTR-F
XRT8001ID-F
XRT8001IDTR-F
XR-T5683AID-F
XRT5683A
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PDF
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CM1437
Abstract: CM1437-04DE
Text: CM1437 4 and 8 Channel EMI Filter Arrays with ESD Protection Features Product Description • California Micro Devices’ CM1437 is an EMI filter array with ESD protection, which integrates either four or eight pi filters C-R-C . The CM1437 has component
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CM1437
CM1437
5pF-200-7
210MHz)
MIL-STD-883
MO-229C
16-Lead,
POD-CEC-DFN16-013
CM1437-04DE
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PDF
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HY5DU281622ET
Abstract: HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28 HY5DU281622ET-30 HY5DU281622ET-33 HY5DU281622ET-36 HY5DU281622ET-4 HY5DU281622ET-5
Text: HY5DU281622ET 128M 8Mx16 GDDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Jan. 2005
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Original
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HY5DU281622ET
8Mx16)
166Mhz
200Mhz)
400mil
66pin
HY5DU281622ET
HY5DU281622ET-25
HY5DU281622ET-26
HY5DU281622ET-28
HY5DU281622ET-30
HY5DU281622ET-33
HY5DU281622ET-36
HY5DU281622ET-4
HY5DU281622ET-5
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV143EL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. FEATURES 1 Low Operation Current. E Small Package . A F E 2 MAXIMUM RATING Ta=25 CHARACTERISTIC G B D C SYMBOL RATING UNIT Reverse Voltage
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KDV143EL
100MHz
200pF,
100nA
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PDF
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2N7002KA
Abstract: No abstract text available
Text: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. E B L L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 A G ・Rugged and reliable.
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2N7002KA
2N7002KA
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PDF
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KDV144EL
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV144EL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. FEATURES Low Capacitance : CT=0.30[pF] Max. Low Series resistance : rS=1.3[ 1 E ] (Max.) Small Package . A F E G 2 B D G MAXIMUM RATING (Ta=25 )
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KDV144EL
100MHz
200pF,
100nA
KDV144EL
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PDF
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HY5DU573222AFM-25
Abstract: HY5DU573222AFM HY5DU573222AFM-28 HY5DU573222AFM-33 HY5DU573222AFM-36
Text: HY5DU573222AFM 256M 8Mx32 GDDR SDRAM HY5DU573222AFM This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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Original
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HY5DU573222AFM
8Mx32)
HY5DU573222AFM-36
HY5DU573222AFM-28/33
HY5DU573222AFM-33/36/4
144ball
55Max
HY5DU573222AFM-25
HY5DU573222AFM
HY5DU573222AFM-28
HY5DU573222AFM-33
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5DU56822AT-D4/D43 256M-S DDR SDRAM HY5DU56822AT-D4/D43 This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU56822AT-D4/D43
256M-S
HY5DU56822-D
456-bit
256Mb
400mil
66pin
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PDF
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Untitled
Abstract: No abstract text available
Text: HY5DW573222F P 256M(8Mx32) GDDR SDRAM HY5DW573222F(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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Original
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HY5DW573222F
8Mx32)
500Mhz
450Mhz
144ball
55Max
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PDF
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HY5DV281622DT-6
Abstract: HY5DV281622DT HY5DV281622DT-33 HY5DV281622DT-36 HY5DV281622DT-4
Text: HY5DV281622DT 128M 8Mx16 GDDR SDRAM HY5DV281622DT This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Aug. 2003
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Original
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HY5DV281622DT
8Mx16)
HY5DV281622DT-4/5/6
HY5DV281622DT-33/36
400mil
66pin
HY5DV281622DT-6
HY5DV281622DT
HY5DV281622DT-33
HY5DV281622DT-36
HY5DV281622DT-4
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PDF
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KDV142EL
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV142EL TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna switches in mobile applications. FEATURES 1 Low Capacitance : CT=0.35[pF] Max. Low Series resistance : rS=1.3[ E ] (Max.) Small Package . A F E 2 MAXIMUM RATING (Ta=25 CHARACTERISTIC
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KDV142EL
100MHz
KDV142EL
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PDF
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: _u _ N AUER PHILIPS/DISCRETE • ObE D bbS3T31 00113bl T ■ BYV33F SERIES T-03-19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes,
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OCR Scan
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bbS3T31
00113bl
BYV33F
T-03-19
OT-186
bb53T31
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PDF
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR KDP629UL TECHNI CAL DATA SILICON EPITAXIAL PIN TYPE DIODE For antenna sw itches in m obile applications. A FEA TU R ES UÜUÎ ÜUÜ nnnhnn i • Array type 4 Diode in one package CQ • Low Capacitance O • Low Series resistance i 6 * -,
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OCR Scan
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KDP629UL
LP-12
100MHz
200pF,
100nA
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PDF
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H A 431
Abstract: BYV43F BYV43F-35 BYV43F-40A M1208 M2845
Text: — 1.1 N AUER PHILIPS/DISCRETE ObE D • _ bbS3T31 0011407 fl BYV43F SERIES T—03—19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring very low forward voltage drop, low capacitance and absence of stored charge. Their electrical
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OCR Scan
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bbS3T31
BYV43F
T-03-19
OT-186
M1246
m1209
M1210
H A 431
BYV43F-35
BYV43F-40A
M1208
M2845
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PDF
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