SIHS36N50D
Abstract: No abstract text available
Text: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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SiHS36N50D
Super-247
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SIHF10N40D-E3
Abstract: No abstract text available
Text: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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SiHF10N40D
O-220
2011/65/EU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIHF10N40D-E3
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mosfet to-220ab
Abstract: 91512 SiHP14N50D
Text: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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SiHP14N50D
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
mosfet to-220ab
91512
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NS-106
Abstract: 2SK3354 NS 106
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3354 TO-263 +0.1 1.27-0.1 RDS on 2 = 12 m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 6300 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode +0.2 4.57-0.2
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2SK3354
O-263
NS-106
2SK3354
NS 106
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A1723
Abstract: smd transistor 26 KPA1716 40A19
Text: IC IC SMD Type MOS Field Effect Transistor KPA1716 Features Low on-state resistance RDS on 1 = 12.5 m TYP. (VGS = -10 V, ID = -4 A) RDS(on)2 = 17 m TYP. (VGS = -4.5 V, ID = -4 A) RDS(on)3 = 19 m TYP. (VGS = -4.01 V, ID = -4 A) Low Ciss : Ciss = 2100 pF TYP.
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KPA1716
Powe20V,
A1723
smd transistor 26
KPA1716
40A19
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 N-Channel Enhancement type OUTLINE DIMENSIONS F1E50VX2 Case : E-pack (Unit : mm) 500V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2177
F1E50VX2)
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IT1172
Abstract: No abstract text available
Text: BFL4036 Ordering number : ENA1830 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4036 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.4Ω (typ.) Input capacitance Ciss=1000pF (typ.) 10V drive Specifications
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BFL4036
ENA1830
1000pF
A1830-5/5
IT1172
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Untitled
Abstract: No abstract text available
Text: ATP613 Ordering number : ENA1903 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP613 General-Purpose Switching Device Applications Features • • • Reverse recovery time trr=60ns typ. Input Capacitance Ciss=350pF(typ.) Halogen free compliance
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ATP613
ENA1903
350pF
A1903-5/5
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Untitled
Abstract: No abstract text available
Text: BFL4007 Ordering number : ENA1689 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4007 General-Purpose Switching Device Applications Features • • Reverse recovery time trr=95ns typ Input capacitance Ciss=1200pF (typ) • • ON-resistance RDS(on)=0.52Ω (typ)
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BFL4007
ENA1689
1200pF
A1689-5/5
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4839A N-Channel Junction Silicon FET 2SK2394 Low-Noise HF Amplifier Applications Applications Package Dimensions • AM tuner RF amplifier. · Low-noise amplifier. unit:mm 2050A [2SK2394] Features 0.5 0.4 · Largeyfs. · Small Ciss.
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EN4839A
2SK2394
2SK2394]
2SK2394-applied
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FL4037
Abstract: No abstract text available
Text: BFL4037 Ordering number : ENA1831 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4037 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on =0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications
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BFL4037
ENA1831
1200pF
A1831-5/5
FL4037
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APT5015BLC
Abstract: No abstract text available
Text: APT5015BLC 500V 32A 0.150 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,
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APT5015BLC
O-247
O-247
APT5015BLC
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P093A
Abstract: STE50DE100
Text: STE50DE100 1000 V - 50 A - 25 mΩ POWER MODULE PRELIMINARY DATA • ■ ■ ■ ■ ■ HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION ULTRA LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH UP TO 150 KHz SQUARED RBSOA UP TO 1000 V ULTRA LOW CISS DRIVEN BY RG = 56Ω
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STE50DE100
P093A
STE50DE100
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transistor marking code 12W SOT-23
Abstract: No abstract text available
Text: Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS
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LND150
LND150
DSFP-LND150
C041114
transistor marking code 12W SOT-23
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds
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VP0104
DSFP-VP0104
C082313
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IRF830B
Abstract: No abstract text available
Text: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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IRF830B
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF830B
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PDF
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forth dimension displays
Abstract: SIHU3N50D-GE3
Text: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20
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SiHU3N50D
O-251)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
forth dimension displays
SIHU3N50D-GE3
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2n5549
Abstract: No abstract text available
Text: TYPE 2N5549 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T I N N O . D L -S 7 0 1 1 1 2 4 , J U N E 1 9 7 0 FOR LOW-LEVEL CHOPPERS, LOGIC SWITCHES, MULTIPLEXERS, AND RF AND VHF AMPLIFIERS • High lyfsl/Ciss Ratio High-Frequency Figure-of-Merit
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2N5549
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2N5546
Abstract: No abstract text available
Text: T Y P E S 2N5545, 2N5546, 2N5547 D U A L N C H A N N E L SILICON J U N C T IO N F IE L D -E F F E C T TR A N S IS TO R S B U L L E T IN NO. DL-S 7311696, M AR CH 1 9 7 2 -R E V IS E D M AR CH 1973 M A T C H E D F IE L D -E F F E C T TR AN SISTO RS • High lyf$l/Ciss Ratio High-Frequency Figure-of-Merit
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2N5545,
2N5546,
2N5547
2N5546
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Untitled
Abstract: No abstract text available
Text: [j^ [D tUJ TF ©ÄTTM,© LOW P O W E R FIELD EFFE C T T R A N S IS T O R S L@W [ M © D © [ 1  I l [ p y i F D [ l [ ^ s ' M ° © [ n l  [ M [ M I [ L [ F i T T É Type Number Case Style (T O -) Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off)
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2N3684
2N3684A
2N3685
2N3685A
2N3686
2N3686A
2N3687
2N3687A
2N4867
2N4867A
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UC754
Abstract: UC758
Text: ATCdL LOW P O W E R FIELD E FFEC T T R A N S IS T O R S IMliOMtL ¡PÖJM^©©!! G^tgKlÄMilL Type Number •BVDgo or Case BVgss Style Min (T O - Geometry (V) Ciss Max (pF) Crss Max (PF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max
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OCR Scan
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KK4302
KK4303
KK4304
UC100
UC105
UC110
UC120
UC130
UC135
UC701
UC754
UC758
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PDF
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2SK2395
Abstract: No abstract text available
Text: Ordering number: EN4640 2SK2395 No. 4840 N-Channel Junction Silicon FET SA\YO i Low-Noise HF Amp Applications A pplications •AM tuner RF amp. • Low-noise amp. F e a tu re s • Large I y f8 I . • Small Ciss. • Very low noise figure. bsolute M axim um R atings at Ta = 25°C
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2SK2395
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2SK937
Abstract: No abstract text available
Text: Ordering number:EN 3006 _ 2SK937 No.3006 N-Channel Junction Silicon FET High-Frequency General-Purpose Amp Applications F e a tu re s • Adoption of FBET process •Large lyfsl ■Small ciss A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage
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2SK937
100//A
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NSFY30509
Abstract: NSFY30613 NSFY30616 NSFY30724 NSFY30728 NSFY30824 NSFY30828 NSFY30940 NSFY30942 NSFY31040
Text: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-257 ^ D S o n PACKAGE TO-257 Also available in Z Pack • • • DEVICE TYPE BVdss VOLTS Id @0.5 ID Qg AMPS OHMS nc Ciss Pf Pd WATTS NSFY31042 1000 3.0 4.2 55 950 100 NSFY31040 1000 3.3 4.0 55 950 100
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O-257
O-257
NSFY31042
NSFY31040
NSFY30942
NSFY30940
NSFY30824
NSFY30828
NSFY30724
NSFY30728
NSFY30509
NSFY30613
NSFY30616
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