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Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3x2-08L-B Power Management MOSFETS-Schottky CJ5853DC P-channel MOSFET and Schottky Barrier Diode DFNWB3×2-08L-B FEATURES • Featuring a MOSFET and Schottky Diode • Independent Pinout to Each Device to Ease Circuit Design	Original	2-08L-B CJ5853DC 2-08L-B	PDF
CJ5853DC Abstract: marking 27A DIODE mosfet low vgs 1A Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3x2-08L-B Power management Dual-transistors CJ5853DC P-channel MOSFET and Schottky Diode FEATURES • Featuring a MOSFET and Schottky Diode • Independent Pinout to each Device to Ease Circuit Design	Original	2-08L-B CJ5853DC CJ5853DC marking 27A DIODE mosfet low vgs 1A	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3x2-08L-B Power Management MOSFETs-Schottky CJ5853DC P-channel MOSFET and Schottky Barrier Diode DFNWB3×2-08L-B FEATURES z Independent Pinout to Each Device to Ease Circuit Design z Ultra low VF z Including a CJ2301 MOSFET and a MBR0520 Schottky	Original	2-08L-B CJ5853DC 2-08L-B CJ2301 MBR0520 CJ5853DC	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3x2-08L-B Power management Dual-transistors CJ5853DC P-channel MOSFET and Schottky Diode DFNWB3×2-08L-B FEATURES • Featuring a MOSFET and Schottky Diode • Independent Pinout to each Device to Ease Circuit Design	Original	2-08L-B CJ5853DC 2-08L-B	PDF