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    CJDD3110 Search Results

    CJDD3110 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CJDD3110 Central Semiconductor Original PDF

    CJDD3110 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


    Original     		PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    UJT 2n3904

    Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
    Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24


    Original     		PDF

    CJDD3110

    Abstract: CP311
    Text: PROCESS CP311 Power Transistor NPN High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 109.5 x 109.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 23.6 x 15.4 MILS Emitter Bonding Pad Area 37.8 x 15.8 MILS Top Side Metalization


    Original     		PDF CP311 CJDD3110 CJDD3110 CP311

    CJDD3110

    Abstract: CP311
    Text: PROCESS CP311 Central Power Transistor TM Semiconductor Corp. NPN High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 109.5 x 109.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 23.6 x 15.4 MILS Emitter Bonding Pad Area 37.8 x 15.8 MILS


    Original     		PDF CP311 CJDD3110 CJDD3110 CP311