CXD2408R
Abstract: ICX074AK ICX074AL
Text: CXD2408R Timing Generator for Progressive Scan CCD Image Sensor Description The CXD2408R is an IC developed to generate the timing pulses required by the Progressive Scan CCD image sensors as well as signal processing circuits. Features • EIA support • Electronic shutter function
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CXD2408R
CXD2408R
1560fh
5454MHz)
FP64PL01
FP064-
1010Q
ICX074AK
ICX074AL
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1M preset, horizontal
Abstract: CXD2408R ICX074AK ICX074AL CXD2311AR
Text: CXD2408R Timing Generator for Progressive Scan CCD Image Sensor For the availability of this product, please contact the sales office. Description The CXD2408R is an IC developed to generate the timing pulses required by the Progressive Scan CCD image sensors as well as signal processing
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CXD2408R
CXD2408R
1560fh
5454MHz)
1/60s
64PIN
LQFP-64P-L01
LQFP064-P-1010
1M preset, horizontal
ICX074AK
ICX074AL
CXD2311AR
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CXD2408R
Abstract: ICX074AK ICX074AL
Text: CXD2408R Timing Generator for Progressive Scan CCD Image Sensor Description The CXD2408R is an IC developed to generate the timing pulses required by the Progressive Scan CCD image sensors as well as signal processing circuits. Features • EIA support • Electronic shutter function
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Original
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CXD2408R
CXD2408R
1560fh
5454MHz)
1/60s
64PIN
LQFP-64P-L01
LQFP064-P-1010
ICX074AK
ICX074AL
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PDF
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sony ccd cmos camera
Abstract: CXD2408AR ICX074AK ICX074AL CXD2311AR
Text: CXD2408AR Timing Generator for Progressive Scan CCD Image Sensor Description The CXD2408AR is an IC developed to generate the timing pulses required by the Progressive Scan CCD image sensors as well as signal processing circuits. Features • EIA support • Electronic shutter function
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Original
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CXD2408AR
CXD2408AR
1560fh
5454MHz)
XD2408AR
64PIN
LQFP-64P-L01
LQFP064-P-1010
42/COPPER
sony ccd cmos camera
ICX074AK
ICX074AL
CXD2311AR
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Untitled
Abstract: No abstract text available
Text: PD-94584J S-SERIES 28V Input, Single/Dual Output HYBRID-HIGH RELIABILITY RADIATION HARDENED LOW POWER DC-DC CONVERTER Description The S-Series of DC-DC converters are low power radiation hardened, high reliability devices designed for hostile radiation environments such as those
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PD-94584J
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Untitled
Abstract: No abstract text available
Text: PD-94584H S-SERIES 28V Input, Single/Dual Output HYBRID-HIGH RELIABILITY RADIATION HARDENED LOW POWER DC-DC CONVERTER Description The S-Series of DC-DC converters are low power radiation hardened, high reliability devices designed for hostile radiation environments such as those
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PD-94584H
MIL-STD-975
MIL-STD-1547.
2520Junction
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5962-04239
Abstract: S2805S/CK
Text: PD-94584H S-SERIES 28V Input, Single/Dual Output HYBRID-HIGH RELIABILITY RADIATION HARDENED LOW POWER DC-DC CONVERTER Description The S-Series of DC-DC converters are low power radiation hardened, high reliability devices designed for hostile radiation environments such as those
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Original
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PD-94584H
MIL-STD-975
MIL-STD-1547.
2520Junction
5962-04239
S2805S/CK
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PDF
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Untitled
Abstract: No abstract text available
Text: CERAMOS Lead Pb Free Product - RoHS Compliant LUW C9EN Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 78 lm bei 500 mA • Besonderheit des Bauteils: hocheffiziente Lichtquelle bei geringem Platzbedarf
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4000/Rolle,
JESD22-A114-D
D-93055
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Untitled
Abstract: No abstract text available
Text: CERAMOS Lead Pb Free Product - RoHS Compliant LUW C9EN Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 78 lm bei 500 mA • Besonderheit des Bauteils: hocheffiziente Lichtquelle bei geringem Platzbedarf
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4000/Rolle,
JESD22-A114-D
D-93055
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PDF
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Untitled
Abstract: No abstract text available
Text: W3J512M72K-XPBX W3J512M72K-XLBX *ADVANCED 4GB – 512M x 72 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES Address/control terminations included DDR3 Data Rate = 800, 1,066, 1333, 1600* Mb/s Differential clock terminations included
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W3J512M72K-XPBX
W3J512M72K-XLBX
1600Mb/s
W3J512M72K-XLBX
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PDF
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Untitled
Abstract: No abstract text available
Text: CERAMOS Lead Pb Free Product - RoHS Compliant LUW C9EN Released Besondere Merkmale • Gehäusetyp: SMD Keramik Gehäuse mit diffusem Silikonverguss • Typischer Lichtstrom: 78 lm bei 500 mA • Besonderheit des Bauteils: hocheffiziente Lichtquelle bei geringem Platzbedarf
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Original
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4000/Rolle,
JESD22-A114-D
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PDF
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Untitled
Abstract: No abstract text available
Text: W3J512M72G-XPBX W3J512M72G-XLBX 4GB – 512M x 72 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES Address/control terminations included DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s Differential clock terminations included
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W3J512M72G-XPBX
W3J512M72G-XLBX
1600Mb/s
W3J512M72G-XLBX
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PDF
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w3j128m72
Abstract: w3j512m72
Text: W3J512M72G-XPBX W3J512M72G-XLBX 4GB – 512M x 72 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES Address/control terminations included DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s Differential clock terminations included
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W3J512M72G-XPBX
W3J512M72G-XLBX
1600Mb/s
w3j128m72
w3j512m72
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Untitled
Abstract: No abstract text available
Text: F5B Capacitor / Diode unit metallized POLYester film CAPACITOR with Integrated bidirectional suppressor diode High performance peak reduction Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression
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20x10-4
1x10-9
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MT41K256M32
Abstract: FBGA DDR3 x32 MT41K256M3 MT41K256M16
Text: Preliminary‡ 8Gb: x32 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K256M32 – 32 Meg x 32 x 8 Banks Description Options Marking • Configuration – 32 Meg x 32 x 8 banks • FBGA package Pb-free – 136-ball FBGA (11mm x 14mm x 1.2mm) Rev. D
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MT41K256M32
MT41K256M16
MT41K256M32.
136-ball
DDR3L-1600)
DDR3L-1333)
DDR3L-1066)
SAC305
09005aef84ad0652
MT41K256M32
FBGA DDR3 x32
MT41K256M3
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MT41K256M32
Abstract: MT41K256M3 8Gb DDR3 SDRAM twindie MT41K256M16
Text: 8Gb: x32 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K256M32 – 32 Meg x 32 x 8 Banks Description Options Marking • Configuration – 32 Meg x 32 x 8 banks • FBGA package Pb-free – 136-ball FBGA (11mm x 14mm x 1.2mm) Rev. D – 136-ball FBGA
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MT41K256M32
MT41K256M16
MT41K256M32.
136-ball
DDR3L-1600)
DDR3L-1333)
DDR3L-1066)
09005aef84ad0652
MT41K256M32
MT41K256M3
8Gb DDR3 SDRAM twindie
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capacitor 0.1 k 100 MKT
Abstract: No abstract text available
Text: F5B Capacitor / Diode unit metallized POLYester film CAPACITOR with Integrated bidirectional suppressor diode High performance peak reduction Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression
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20x10-4
1x10-9
capacitor 0.1 k 100 MKT
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IEC60063
Abstract: capacitor mkt 100nf
Text: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression
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1x10-9
20x10-4
IEC60063
capacitor mkt 100nf
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capacitor 100nf 63v MKT
Abstract: smd code marking CK suppressor diode smd CK 78 smd varistor ck 100nF 63V polyester capacitor capacitor mkt 100nf
Text: F5B Capacitor / Diode unit metallized POLYester film CAPACITOR with Integrated bidirectional suppressor diode High performance peak reduction Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression
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20x10-4
1x10-9
capacitor 100nf 63v MKT
smd code marking CK
suppressor diode smd
CK 78 smd
varistor ck
100nF 63V polyester capacitor
capacitor mkt 100nf
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FBGA DDR3 x32
Abstract: MT41K256M32 MT41K256M16 MT41K256M3 MICRON fBGA package code
Text: Preliminary‡ 8Gb: x32 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K256M32 – 32 Meg x 32 x 8 Banks Description Options Marking • Configuration – 32 Meg x 32 x 8 banks • FBGA package Pb-free – 136-ball FBGA (11mm x 14mm x 1.2mm) Rev. D
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MT41K256M32
MT41K256M16
MT41K256M32.
136-ball
DDR3L-1600)
DDR3L-1333)
DDR3L-1066)
SAC305
09005aef84ad0652
FBGA DDR3 x32
MT41K256M32
MT41K256M3
MICRON fBGA package code
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Untitled
Abstract: No abstract text available
Text: SMD 4MM SQUARE / SINGLE-TURN CERMET / 5-TURN SEALED • Elastom er seal allow s m ultiple adjustm ents while m aintaining environm ental protection ■ R ecom m ended for reflow and w ave solder processing ■ Cross-slot rotor design suitable for autom atic adjustm ent equipm ent
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Untitled
Abstract: No abstract text available
Text: Philips Components Datasheet status Product specification date of issue April 1991 B D S201/203/77 NPN silicon epitaxial base power transistors DESCRIPTION PINNING-SOT223 PIN NPN silicon epitaxial base transistors DESCRIPTION in a miniature SMD envelope 1
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S201/203/77
PINNING-SOT223
OT223)
BDS202/204/78.
BDS201/203/77
bfci53T31
OT223.
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Untitled
Abstract: No abstract text available
Text: For technical assistance call the Multifuser Products number on the back cover. > Features Applications • 4.5mm SMD ■ Fast tripping resettable circuit protection ■ Surface mount packaging for automated assembly ■ Reduced component size and resistance
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F-MSM020
F-MSMC035
MF-MSMC050
F-MSM050
MF-MSMC075
F-MSM075
23Leaded
02C-110
MF-MSMC035
MF-MSMC050.
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PDF
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Untitled
Abstract: No abstract text available
Text: Lattica ispLSI and pLS/0 1048C ;Semiconductor I Corporation High-Density Programmable Logic Features Functional Block Diagram HIGH-DENSITY PROGRAMMABLE LOGIC — 8000 PLD Gates — 96 I/O Pins, 12 Dedicated Inputs, 2 Global Output Enables — 288 Registers
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1048C
041A-48C-isp
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