CK MARKING Search Results

Contextual Info: 0N UNTERNEHMEN VON Allgemeirve Angaben General Features Roederstein Vielschichtkondensatoren Multilayer capacitors 3. Kennzeichnung / Marking a C K 05, CK 06: Typenbezeichnung / Type designation

MT28F800

Contextual Info: ADVANCE FLASH MEMORY 512Kx16,1 MEGx8 5V/5V, BOOT BLOCK FEATURES • E lev en erase blo ck s: 1 6 K B /8 K -w o rd bo o t blo ck protected T w o 8 K B /4 K -w o rd p a ra m eter b lo ck s Eig ht m ain m em o ry b lo ck s • D eep P ow er-D o w n M ode: 5 jiA M A X

KTX403U

Abstract: marking CK
Contextual Info: SEMICONDUCTOR KTX403U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking CK 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark CK KTX403U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

Contextual Info: White Electronic Designs W3EG7235S-JD3 PRELIMINARY* 256MB - 32Mx72 DDR SDRAM REGISTERED ECC, w/PLL FEATURES  Double-data-rate architecture  Speeds of 100MHz and 133MHz  Bi-directional data strobes DQS  Differential clock inputs (CK# & CK) 

DDR200

Abstract: DDR266 DDR333 W3EG6464S-AD4
Contextual Info: W3EG6464S-AD4 -BD4 White Electronic Designs PRELIMINARY* 512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL FEATURES DESCRIPTION „ Double-data-rate architecture „ Speeds of 100MHz, 133MHz and 166MHz „ Bi-directional data strobes DQS „ Differential clock inputs (CK & CK#)

Contextual Info: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver  Differential clock inputs (CK and /CK)

hynix lpddr2

Abstract: ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory
Contextual Info: 2Gb LPDDR2-S4 SDRAM NT6TL64M32AQ Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS, /DQS is transmitted/received with data, to be used in capturing data at the receiver  Differential clock inputs (CK and /CK)

CK1CA-145

Abstract: CK1CA-754 MARKING CODE CK2 CK1CA-105 CK1CA-205 CK2CA-105 CK2CA-754 MIL-F-15733 Feed-Thru Filters type pi
Contextual Info: Cylindrical Style EMI Filters CK Series – .375 Dia. – Button Hermetically Sealed – Circuits Available – C & L APPLICATIONS The CK series offers effective filtering from 100 KHz to 10 GHz. Glass sealed for hermeticity, this medium profile series is impervious to high moisture, solvents,

CK1CA-105

Abstract: CK1CA-145 CK1CA-754 CK1CA-205 CK2CA-105 CK2CA-754 MIL-F-15733 CK2AA-105 CK2AA-754
Contextual Info: Cylindrical Style EMI Filters CK Series – .375 Dia. – Button Hermetically Sealed – Circuits Available – C & L APPLICATIONS The CK series offers effective filtering from 100 KHz to 10 GHz. Glass sealed for hermeticity, this medium profile series is impervious to high moisture, solvents,

28F400B1

Abstract: TS0P48
Contextual Info: PRELIMINARY MICRON MT28F400B1 256K x 16 512K x 8 F L A S H M EM O RY I FLASH MEMORY 256K x 16, 512K x 8 FEATURES PIN ASSIGNMENT Top View 44-Pin SOP • Sev en era se b lo ck s: 1 6 K B /8 K -w o rd b o o t blo ck (p rotected ) T w o 8 K B /4 K -w o rd p a ra m e ter b lo ck s

28f200-bB

Abstract: mt2f2 28F200-T L99 marking T199S
Contextual Info: PRELIMINARY M IC R O MT28F200 128K x 16, 256K x 8 FLASH MEMORY N 128K x 16, 256K x 8 FLASH MEMORY FEATURES PIN ASSIGNMENT (Top View • Five erase blocks: 16K B /8 K -w o rd bo o t b lo ck (protected) T w o 8 K B /4 K -w o rd p a ra m e ter b lo ck s T w o m ain m em o ry b lo ck s

SK Series

Abstract: SK-12A sk-14d AT4094 sk25b 122m16
Contextual Info: Contents Rockers Toggles Keylocks Pushbuttons CK Series .F4 SK Series .F10 SK Series .F16 SK Series .F20

Micron Quantum Devices

Contextual Info: ADVANCE MT28SF200 128K x 16, 256K x 8 FLASH MEMORY M IC R O N 128K x 16, 256K x 8 FLASH MEMORY FEATURES PIN ASSIGNMENT (Top View • Fiv e era se blocks: 1 6 K B /8 K -w o rd bo o t b lo ck (p rotected ) T w o 8 K B /4 K -w o rd p a ra m eter b lo ck s T w o m ain m em o ry b lo ck s

Contextual Info: CK 05 - CK 06 TCN 15 - TCN 16 CONDENSATEURS CERAMIQUE MOULES CLASSE 2 7,4 7,4 2,3 5,08 0,6 100 200 100 120 150 180 220 270 330 390 470 560 680 820 101 121 151 181 221 271 331 391 471 561 681 821 102 122 152 182 222 272 332 392 472 562 682 822 103 123 153 183

Contextual Info: PRELIMINARY MT28F400 256K x 16, 512K x 8 FLASH MEMORY |U 1I C = R C 3N FLASH MEMORY 256K x 16, 512K x 8 FEATURES PIN ASSIGNMENT Top View • Sev en erase blocks: - 1 6 K B /8 K -w o rd b oo t b lo ck (p rotected ) - T w o 8 K B /4 K -w o rd p aram eter b lo ck s

lic policy

Contextual Info: REFERENCE DATA K V 1 3 5 1 A - 1 S P E C I F I C A T I ON TABLE OF CONTENTS 1. PURPOSE 2. T O K O PART NUMBER 3. APPLIC ATIO NS 4. STR U CTU RE 5. PA CK A GE OUTLINE 6. PIN LAYOUT 7. PA CK A GE OU TLINE D I M E N S I O N S / SIG N A T U R E MARKING 8. A B S O L U T E MAXIMUM RATINGS

MT28

Abstract: MT28SF008
Contextual Info: ADVANCE MT28 S F008 1 MEG x 8 FLASH MEMORY FLASH MEMORY 1 MEG x 8 AND 5 V /5 V 3 V S m a rtV o lta g e , BOOT BLOCK FEATURES PIN ASSIGNMENT (Top View) • E leven erase blocks: 16K B bo o t b lo ck (p ro tected ) T w o 8K B p a ra m eter b lo ck s Eight m ain m em ory blocks

MT28F002

Abstract: SR50
Contextual Info: PRELIMINARY MICRON 1 MT28F002 256K x 8 FLASH MEMORY -• - 256K x 8 I FLASH MEMORY FEATURES • Five erase blocks: 16K B bo o t b lo ck protected T w o 8K B p a ra m eter b lo ck s T w o m ain m em o ry b locks • 5V ±10% V c c; 12V ±5% V pp • A d d ress access tim es: 60n s, 80ns, 100ns

Contextual Info: ADVANCE M T28SF400 256K x 16, 512K x 8 FLA S H M EM ORY MICRON 256K x 16, 512K x 8 FLASH MEMORY FEATURES PIN ASSIGNMENT (Top View 44-Pin SOP • Sev en erase b locks: 1 6 K B /8 K -w o rd b o o t b lo ck (p rotected ) T w o 8 K B /4 K -w o rd p a ra m e ter b lo ck s

Contextual Info: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 100 SERIES MINIATURE BLO CK ACCESSO RIES CHANNEL CLAMPS I i SCREW STEEL CHANNEL SNAP-IN MINIATURE FOR #12 CHANNEL SEE-THRU COVER GANGING ROD MINIATURE VINYL MARKING STRIPS ELEVATED MARKING STRIP NYLON HOLDING

Contextual Info: R E V 1S I O N S S M P - MS L D - PC R NOTES: I MATERIALS AND FINISHES: BODY - BRASS, G O L D PLATING, .000030 [0.8] TH I CK O V E R C O P P E R C O N T A C T - GOLD, G O L D PLATING, .000030 [0.8] TH I CK O V E R C O P P E R I N S U L A T O R - PEEK OR LCP

Contextual Info: CAGE C LA M P " E E x e II Through Term inal B lo ck s, S e rie s 2 8 0 7 F r o n t- e n tr y 15 0 .2 - 2.5 mm2 | A W G 2 4 - 1 2 0 550 V - , 23 A © / . V / r \ \cx/ \ Term inal b lo ck w id th 5 m m / 0 .3 3 in / /E \ 0.197 in i_ 8 - 9 m m * © «6

Contextual Info: DP500 Semiconductor PNP Silicon Transistor Description • Suit able for low volt age large current drivers • Excellent h FE Linearity • Com plem ent ary pair wit h DN500 • Switching Application Ordering Information Type N O. Marking Pa ck a ge Code

Contextual Info: REFERENCE DATA K V 14 0 5 S P E C I F I C A T I ON TABLE 1. OF CONTENTS PU RPO SE 2 . T O K O PART NUMBER 3 . A PPLIC A T IO N S 4. STR U C T U R E 5. PA CK A G E O U TLIN E 6. PIN LA Y O U T 7. PA CK A G E O U TLIN E D IM E N S IO N S / S IG N A T U R E Drawn By