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    Seiko Epson Corporation PWT SG-8002CA IC SOCKET

    Programmable Oscillators ADAPTER SOCKET FOR PROM WRITER
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    Carling Technologies ROCKER VV3ZZ00

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    Seiko Epson Corporation PWT SG-8002CE IC SOCKET

    Programmable Oscillators ADAPTER SOCKET FOR PROM WRITER
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    Mouser Electronics PWT SG-8002CE IC SOCKET
    • 1 $106.03
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    CKE 8002 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sdram 4 bank 4096 16

    Abstract: HM5264165DLTT-80 HM5264165DTT-80 HM5264805DTT-80 HM5264405DTT-80 Hitachi DSA00196 HM5264165DTT
    Text: HM5264165D Series HM5264805D Series HM5264405D Series 64M LVTTL interface SDRAM 125 MHz/100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank/ 4-Mword × 4-bit × 4-bank ADE-203-910 Z Preliminary Rev. 0.0 May. 8, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi


    Original     		HM5264165D HM5264805D HM5264405D Hz/100 16-bit ADE-203-910 64-Mbit 1048576-word sdram 4 bank 4096 16 HM5264165DLTT-80 HM5264165DTT-80 HM5264805DTT-80 HM5264405DTT-80 Hitachi DSA00196 HM5264165DTT PDF

    HM5264805 Series

    Abstract: HM5264165DTT-A60 sdram 4 bank 4096 16 Hitachi DSA00196
    Text: HM5264165D-A60 HM5264805D-A60 HM5264405D-A60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-909 Z Preliminary Rev. 0.0 May. 8, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi


    Original     		HM5264165D-A60 HM5264805D-A60 HM5264405D-A60 16-bit PC/100 ADE-203-909 HM5264165D 64-Mbit 1048576-word HM5264805 Series HM5264165DTT-A60 sdram 4 bank 4096 16 Hitachi DSA00196 PDF

    sdram 4 bank 4096 16

    Abstract: HM5264165DTT-B60 Hitachi DSA00196
    Text: HM5264165D-B60 HM5264805D-B60 HM5264405D-B60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-908 Z Preliminary Rev. 0.0 May. 8, 1998 Description The Hitachi HM5264165D is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi


    Original     		HM5264165D-B60 HM5264805D-B60 HM5264405D-B60 16-bit PC/100 ADE-203-908 HM5264165D 64-Mbit 1048576-word sdram 4 bank 4096 16 HM5264165DTT-B60 Hitachi DSA00196 PDF

    HM5264165-B60

    Abstract: HM5264805-B60 sdram 4 bank 4096 16 HM5264165 HM5264165TT-B60 Hitachi DSA00196
    Text: HM5264165-B60 HM5264805-B60 HM5264405-B60 64M LVTTL interface SDRAM 100 MHz 1-Mword x 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/100 SDRAM ADE-203-832C Z Rev. 1.0 Jun. 25, 1998 Description The Hitachi HM5264165 is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi


    Original     		HM5264165-B60 HM5264805-B60 HM5264405-B60 16-bit PC/100 ADE-203-832C HM5264165 64-Mbit 1048576-word HM5264165-B60 HM5264805-B60 sdram 4 bank 4096 16 HM5264165TT-B60 Hitachi DSA00196 PDF

    Hitachi DSA00164

    Abstract: No abstract text available
    Text: HM5221605 Series 2 M LVTTL interface SDRAM 64-kword x 16-bit × 2-bank 66 MHz / 58 MHz / 50 MHz ADE-203-199C (Z) Rev. 3.0 Nov. 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5221605 is offered in 2 banks for improved performance.


    Original     		HM5221605 64-kword 16-bit ADE-203-199C Hz/58 Hz/66 Hitachi DSA00164 PDF

    HM5221605TT-20

    Abstract: HM5221605 HM5221605TT-15 HM5221605TT-17 1993 synchronous dram hitachi Hitachi DSA00196
    Text: HM5221605 Series 2 M LVTTL interface SDRAM 64-kword x 16-bit × 2-bank 66 MHz / 58 MHz / 50 MHz ADE-203-199C (Z) Rev. 3.0 Nov. 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5221605 is offered in 2 banks for improved performance.


    Original     		HM5221605 64-kword 16-bit ADE-203-199C Hz/58 Hz/66 HM5221605TT-20 HM5221605TT-15 HM5221605TT-17 1993 synchronous dram hitachi Hitachi DSA00196 PDF

    HM5221605

    Abstract: HM5221605TT-15 HM5221605TT-17 HM5221605TT-20
    Text: HM5221605 Series 2 M LVTTL interface SDRAM 64-kword x 16-bit × 2-bank 66 MHz / 58 MHz / 50 MHz ADE-203-199C (Z) Rev. 3.0 Nov. 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5221605 is offered in 2 banks for improved performance.


    Original     		HM5221605 64-kword 16-bit ADE-203-199C Hz/58 Hz/66 HM5221605TT-15 HM5221605TT-17 HM5221605TT-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM5216326 Series 16M LVTTL interface SGRAM 2-Mword x 32-bit 125 MHz/100 MHz/83 MHz ADE-203-678B (Z) Preliminary Rev. 0.3 Jan. 14, 1998 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5216326 provides 2 banks to realize better performance. 8 column block write function and write per bit function are provided


    Original     		HM5216326 32-bit) Hz/100 Hz/83 ADE-203-678B FP-100H TFP-100H PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB52E88EM-B6, HB52E89EM-B6, HB52E168EN-B6, HB52E169EN-B6 64 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus HB52E88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M × 8 Components) (HB52E89EM) 8-Mword × 72-bit, 1-Bank Module (9 pcs of 8 M × 8 Components)


    Original     		HB52E88EM-B6, HB52E89EM-B6, HB52E168EN-B6, HB52E169EN-B6 HB52E88EM) 64-bit, HB52E89EM) 72-bit, HB52E168EN) 16-Mword Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: HM5216805-A60, HM5216405-A60, HM5216805-B60, HM5216405-B60 16M LVTTL interface SDRAM 100 MHz 1-Mword x 8-bit/2-Mword × 4-bit PC/100 SDRAM ADE-203-796B Z Preliminary Rev. 0.3 Dec. 23, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805, HM5216405 are


    Original     		HM5216805-A60, HM5216405-A60, HM5216805-B60, HM5216405-B60 PC/100 ADE-203-796B HM5216805, HM5216405 HM5216805/5216405-B60 HM5216805 PDF

    HM5216326

    Abstract: HM5216326FP-10 HM5216326FP-12 HM5216326FP-8 Hitachi DSA00196
    Text: HM5216326 Series 16M LVTTL interface SGRAM 125 MHz/100 MHz/83 MHz 256-kword x 32-bit × 2-bank ADE-203-678D Z Rev. 1.0 Jul. 6, 1998 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5216326 provides 2 banks to realize better performance. 8 column block write function and write per bit function are provided


    Original     		HM5216326 Hz/100 Hz/83 256-kword 32-bit ADE-203-678D HM5216326FP-10 HM5216326FP-12 HM5216326FP-8 Hitachi DSA00196 PDF

    361BL

    Abstract: No abstract text available
    Text: HM5283206 Series 8M LVTTL interface SGRAM 1-Mword x 32-bit 125 MHz/100 MHz/83 MHz ADE-203-223D (Z) Rev. 4.0 Jan. 20, 1998 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5283206 provides 2 banks to realize better performance. 8 column block write function and write per bit function are provided for


    Original     		HM5283206 32-bit) Hz/100 Hz/83 ADE-203-223D TBD/75/60 TBD/10/10 361BL PDF

    b6 ss 89

    Abstract: HB52E168EN-B6 HB52E169EN-B6 HB52E88EM-B6 HB52E89EM-B6 Hitachi DSA00243 Nippon capacitors
    Text: HB52E88EM-B6, HB52E89EM-B6, HB52E168EN-B6, HB52E169EN-B6 64 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus HB52E88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M × 8 Components) (HB52E89EM) 8-Mword × 72-bit, 1-Bank Module (9 pcs of 8 M × 8 Components)


    Original     		HB52E88EM-B6, HB52E89EM-B6, HB52E168EN-B6, HB52E169EN-B6 HB52E88EM) 64-bit, HB52E89EM) 72-bit, HB52E168EN) 16-Mword b6 ss 89 HB52E168EN-B6 HB52E169EN-B6 HB52E88EM-B6 HB52E89EM-B6 Hitachi DSA00243 Nippon capacitors PDF

    HB526C464EN-10IN

    Abstract: Nippon capacitors
    Text: HB526C264EN-10IN, HB526C464EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 64-bit, 66 MHz Memory Bus, 1/2-Bank Module 8/16 pcs of 2 M × 8 Components ADE-203-737D (Z) Rev. 4.0 Nov. 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and


    Original     		HB526C264EN-10IN, HB526C464EN-10IN 64-bit, ADE-203-737D HB526C264EN, HB526C464EN HB526C264EN 16-Mbit HM5216805TT) 24C02) HB526C464EN-10IN Nippon capacitors PDF

    pec 630

    Abstract: Nippon capacitors
    Text: HB52C88EM, HB52C89EM HB52C168EN, HB52C169EN 64 MB Unbuffered SDRAM DIMM, 66 MHz Memory Bus HB52C88EM 8-Mword x 64-bit, 1-Bank Module (8 pcs of 8 M × 8 Components) (HB52C89EM) 8-Mword × 72-bit, 1-Bank Module (9 pcs of 8 M × 8 Components) 128 MB Unbuffered SDRAM DIMM, 66 MHz Memory Bus


    Original     		HB52C88EM, HB52C89EM HB52C168EN, HB52C169EN HB52C88EM) 64-bit, HB52C89EM) 72-bit, HB52C168EN) 16-Mword pec 630 Nippon capacitors PDF

    Hitachi DSA00164

    Abstract: Nippon capacitors
    Text: HB526C272EN-10IN, HB526C472EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 72-bit, 66 MHz Memory Bus, 1/2-Bank Module 9/18 pcs of 2 M × 8 Components ADE-203-693D (Z) Rev. 4.0 Nov. 1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and


    Original     		HB526C272EN-10IN, HB526C472EN-10IN 72-bit, ADE-203-693D HB526C272EN, HB526C472EN HB526C272EN 16-Mbit HM5216805TT) 24C02) Hitachi DSA00164 Nippon capacitors PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB526C272EN-10IN, HB526C472EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 72-bit, 66 MHz Memory Bus, 1/2-Bank Module 9/18 pcs of 2 M × 8 Components ADE-203-693D (Z) Rev. 4.0 Nov. 1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and


    Original     		HB526C272EN-10IN, HB526C472EN-10IN 72-bit, ADE-203-693D HB526C272EN, HB526C472EN HB526C272EN 16-Mbit HM5216805TT) 24C02) Nippon capacitors PDF

    HB526C464EN-10IN

    Abstract: Hitachi DSA00164 Nippon capacitors
    Text: HB526C264EN-10IN, HB526C464EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 64-bit, 66 MHz Memory Bus, 1/2-Bank Module 8/16 pcs of 2 M × 8 Components ADE-203-737D (Z) Rev. 4.0 Nov. 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and


    Original     		HB526C264EN-10IN, HB526C464EN-10IN 64-bit, ADE-203-737D HB526C264EN, HB526C464EN HB526C264EN 16-Mbit HM5216805TT) 24C02) HB526C464EN-10IN Hitachi DSA00164 Nippon capacitors PDF

    Hitachi DSA00164

    Abstract: Nippon capacitors
    Text: HB52E89E1-B6 64 MB Registered SDRAM DIMM 8-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 9 pcs of 8 M × 8 Components PCSDRAM-0.8 ADE-203-890 (Z) Preliminary, Rev.0.0 Feb. 20, 1998 Description The HB52E89E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and have been


    Original     		HB52E89E1-B6 72-bit, ADE-203-890 HB52E89E1 64-Mbit HM5264805TT) ALVC16835) 168-pin Hitachi DSA00164 Nippon capacitors PDF

    CDC2509

    Abstract: BST R68 Nippon capacitors
    Text: HB52E169E1-B6 128 MB Registered SDRAM DIMM 16-Mword x 72-bit, 100 MHz Memory Bus, 1-Bank Module 18 pcs of 16 M × 4 Components PCSDRAM-0.8 ADE-203-891 (Z) Preliminary Rev. 0.0 Feb. 20, 1998 Description The HB52E169E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed


    Original     		HB52E169E1-B6 16-Mword 72-bit, ADE-203-891 HB52E169E1 64-Mbit HM5264405TT) CDC2509) ALVC16835) CDC2509 BST R68 Nippon capacitors PDF

    equivalent transistor TT 3034

    Abstract: TT 3034 HM5283206 HM5283206FP-10 HM5283206FP-12 HM5283206FP-8 Hitachi DSA00196
    Text: HM5283206 Series 8M LVTTL interface SGRAM 125 MHz/100 MHz/83 MHz 128-kword x 32-bit × 2-bank ADE-203-223E Z Rev. 5.0 May. 19, 1998 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5283206 provides 2 banks to realize better performance. 8 column block write function and write per bit function are provided for


    Original     		HM5283206 Hz/100 Hz/83 128-kword 32-bit ADE-203-223E HM5283206-8 equivalent transistor TT 3034 TT 3034 HM5283206FP-10 HM5283206FP-12 HM5283206FP-8 Hitachi DSA00196 PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB52E48EM-B6 32 MB Unbuffered SDRAM DIMM 4-Mword x 64-bit, 100 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M × 16 Components PCSDRAM-0.9 ADE-203-892 (Z) Preliminary Rev. 0.0 Feb. 20, 1998 Description The HB52E48EM belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been


    Original     		HB52E48EM-B6 64-bit, ADE-203-892 HB52E48EM 64-Mbit HM5264165TT) 168-pin HM5264165/HM5264805/HM5264405-B60 Nippon capacitors PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB52C48EM Series 32 MB Unbuffered SDRAM DIMM 4-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M × 16 Components ADE-203-887 (Z) Preliminary Rev. 0.0 Feb. 20, 1998 Description The HB52C48EM belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been


    Original     		HB52C48EM 64-bit, ADE-203-887 64-Mbit HM5264165TT) 168-pin HM5264165/HM5264805/HM5264405 Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: HM5216805-A60, HM5216405-A60, HM5216805-B60, HM5216405-B60 16M LVTTL interface SDRAM 100 MHz 1-Mword x 8-bit/2-Mword x 4-bit PC/100 SDRAM HITACHI ADE-203-796B Z Preliminary Rev. 0.3 Dec. 23, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The H M 5216805, H M 5216405 are


    OCR Scan     		HM5216805-A60, HM5216405-A60, HM5216805-B60, HM5216405-B60 PC/100 ADE-203-796B HM5216805/5216405-B60 HM5216805 HM5216405 PDF