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    CLASS B POWER TRANSISTORS DATASHEET CURRENT GAIN Search Results

    CLASS B POWER TRANSISTORS DATASHEET CURRENT GAIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    CLASS B POWER TRANSISTORS DATASHEET CURRENT GAIN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TH430

    Abstract: SD1728 M177
    Text: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and


    Original     		SD1728 TH430) 56MHz SD1728 TH430 TH430 SD1728 M177 PDF

    Arco 426

    Abstract: No abstract text available
    Text: SD1727 THX15 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W PEP MIN. WITH 14 dB GAIN DESCRIPTION


    Original     		SD1727 THX15) SD1727 Arco 426 PDF

    AP358

    Abstract: No abstract text available
    Text: This Anachip version datasheet is replaced with Diodes Inc. datasheet AP358 AP358 Low Power Dual Operational Amplifiers Features General Description - Internally frequency compensated for unity gain - Large dc voltage gain: 100 dB - Very low supply current drain 500µA -essentially


    Original     		AP358 AP358 015x45 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium


    Original     		RX1214B80W; RX1214B130Y OT439 PDF

    GaN ADS

    Abstract: CGH40010 Large Signal Model CGH40010 AlGaN/GaN HEMTs CGH40010 ads Class E amplifier class E power amplifier GaN amplifier class d amplifier theory transistor 40361
    Text: A High Power, High Efficiency Amplifier using GaN HEMT Bumjin Kim, D. Derickson, and C. Sun California Polytechnic State University –Electrical Engineering Department San Luis Obispo, CA 93407 csun@calpoly.edu, 805-756-2004 Abstract—A class B and a class F power amplifier are


    Original     		PDF

    sine wave generator using LM358

    Abstract: LM358 vs LM741 sine wave generator using opamp lm358 sine wave generator circuit lm358 gain formula lf356 op-amp opamp Lm358 pin function LM358 microphone electrical power generator using transistor transistor based class A amplifier lab
    Text: University of North Carolina, Charlotte Department of Electrical and Computer Engineering ECGR 3157 EE Design II Spring 2011 Lab 1 Power Amplifier Circuits Issued: January 19, 2011_Due: February 4, 2011 In this assignment, you will build some basic amplifier circuits. Many of these amplifiers will


    Original     		LM741 sine wave generator using LM358 LM358 vs LM741 sine wave generator using opamp lm358 sine wave generator circuit lm358 gain formula lf356 op-amp opamp Lm358 pin function LM358 microphone electrical power generator using transistor transistor based class A amplifier lab PDF

    Rogers 4350B

    Abstract: TG2H214120 4G base station power amplifier ECG Cross Reference TG2H214120-FS TG2H214120-FL capacitor 220uF, 50V,NICHICON ECJ-3YB1E106M TG2H214 IC-550
    Text: TG2H214120 2140MHz 120W WCDMA Power Amplifier Applications • • • High power and high linearity applications Wireless Base Station Amplifiers Tower-mounted amplifiers Product Features • • • • • • • • • Functional Block Diagram Optimized for 2110 – 2170 MHz operation


    Original     		TG2H214120 2140MHz TG2H214120 Rogers 4350B 4G base station power amplifier ECG Cross Reference TG2H214120-FS TG2H214120-FL capacitor 220uF, 50V,NICHICON ECJ-3YB1E106M TG2H214 IC-550 PDF

    POET00

    Abstract: No abstract text available
    Text: Data Sheet AS1130 30W Powered Device With Integrated DC-DC Controller Revision 0.9, October 2007 DATASHEET AS1130 CONTENTS General


    Original     		AS1130 2002/95/EC POET00 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC556 to BC558 Vishay Semiconductors Small Signal Transistors PNP Features • PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • These transistors are subdivided into three groups A, B, and C according to their current gain. The


    Original     		BC556 BC558 BC557 BC558 BC546. BC548 D-74025 16-Nov-04 PDF

    MJE210

    Abstract: MJE200 02OA Power Transis
    Text: Datasheet Central MJE200 MJE210 Semiconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 COMPLEMENTARY SILICON POWER TRANSISTORS Manufacturers of World Class Discrete Semiconductors JEDEC T0-126 CASE DESCRIPTION


    OCR Scan     		MJE200 MJE210 T0-126 MJE200, MJE210 500mA 200mA 100mA, 10MHz MJE200) 02OA Power Transis PDF

    AS1124

    Abstract: SI7530 POET76 k2360 "power sourcing equipment" JESD22-A114 MO-220-VHHC-2 akros "Power over Ethernet"
    Text: Data Sheet AS1124 24W, Powered Device with Integrated DC-DC Controller Revision 1.8, October 2007 DATASHEET AS1124 CONTENTS General


    Original     		AS1124 2002/95/EC AS1124 SI7530 POET76 k2360 "power sourcing equipment" JESD22-A114 MO-220-VHHC-2 akros "Power over Ethernet" PDF

    POET0078

    Abstract: AS1113 POET0072 MO-220-VHHC-2 POET00 IEC61000-4 JESD22-A114 CISPR22 2.5 V, 20 W DC-DC Converter with Synchronous Rectification ethernet transformer center tap
    Text: Data Sheet AS1113 13W Powered Device with Integrated DC-DC Controller Revision 1.6, October 2007 DATASHEET AS1113 CONTENTS General


    Original     		AS1113 2002/95/EC POET0078 AS1113 POET0072 MO-220-VHHC-2 POET00 IEC61000-4 JESD22-A114 CISPR22 2.5 V, 20 W DC-DC Converter with Synchronous Rectification ethernet transformer center tap PDF

    LMH6515

    Abstract: No abstract text available
    Text: National Semiconductor Application Note 1718 Loren Siebert November 14, 2007 The LMH6515 is a fully differential amplifier optimized for signal path applications up to 400 MHz and has a 200Ω input. The absolute gain is load dependent; however the gain steps


    Original     		LMH6515 AN-1718 PDF

    N6161

    Abstract: DS009057-16
    Text: LM6161/LM6261/LM6361 High Speed Operational Amplifier General Description The LM6161 family of high-speed amplifiers exhibits an excellent speed-power product in delivering 300 V/µs and 50 MHz unity gain stability with only 5 mA of supply current. Further power savings and application convenience are possible by taking advantage of the wide dynamic range in operating supply voltage which extends all the way down to +5V.


    Original     		LM6161/LM6261/LM6361 LM6161 05-Aug-2000 ////roarer/root/data13/imaging/BIT. 0804/08032000/NATL/08012000/LM6161 21-Jul-2000 1-Aug-2000] N6161 DS009057-16 PDF

    ZETEX T 1049

    Abstract: rele 12V 10A mosfet base inverter with chargers circuit zetex line TRANSISTOR REPLACEMENT GUIDE ZETEX 1049 ZDT1049 zetex 795a laptop inverter ccfl dc-ac converter royer jim Williams
    Text: Application Note 21 Issue 2 January 1996 Bipolar Transistor Considerations for Battery Powered Equipment Leading to Efficiency and Competitive Advantages in Portable Systems Neil Chadderton Introduction The last few years has witnessed an increasing trend towards portability, this no


    Original     		15mmx15mm FMMT717 ZETEX T 1049 rele 12V 10A mosfet base inverter with chargers circuit zetex line TRANSISTOR REPLACEMENT GUIDE ZETEX 1049 ZDT1049 zetex 795a laptop inverter ccfl dc-ac converter royer jim Williams PDF

    balun LDB20C

    Abstract: ERJ6GEYJR00V Z5B Series
    Text: DC to 2.5 GHz High IP3 Active Mixer Preliminary Technical Data FEATURES High Performance Active Mixer Broadband Operation to 2.5 GHz Conversion Gain: +7.1 dB Input IP3: +16.5 dBm LO Drive: -10 dBm Noise Figure: 12.5 dB Input P1dB: +2.8 dBm Differential LO, IF and RF Ports


    Original     		AD8343 AD8343 balun LDB20C ERJ6GEYJR00V Z5B Series PDF

    6361m

    Abstract: viplm6361m LM6361M viplm true 0,9 volt operation class d amplifiers
    Text: LM6161/LM6261/LM6361 High Speed Operational Amplifier General Description The LM6161 family of high-speed amplifiers exhibits an excellent speed-power product in delivering 300 V/µs and 50 MHz unity gain stability with only 5 mA of supply current. Further power savings and application convenience are possible by taking advantage of the wide dynamic range in operating supply voltage which extends all the way down to +5V.


    Original     		LM6161/LM6261/LM6361 LM6161 AN-549: LM6361/LM6364/LM6365 3-Oct-2001] 4-Nov-95 /chechi/LM6361 6361m viplm6361m LM6361M viplm true 0,9 volt operation class d amplifiers PDF

    Untitled

    Abstract: No abstract text available
    Text: VIDEO POWER OPERATIONAL AMPLIFIERS PAO9 • PAO9 A M I C R O T E C H N O L O G Y h t t p ://WWW.APEXMICRDTECH.OOM 800 5 4 6 -APEX (800) 546-2739 FEATURE • PCWffl MCSTECHNOLOGY — 2A peak rating • HIGH GAIN BANDWIDTH PRODUCT— 150WHz • VfflY FAST SLB/V RATE — 400V/ |as


    OCR Scan     		150WHz PDF

    LM124J

    Abstract: voltage follower circuit using LM324 electronic power generator using transistor projects logic diagram of IC number LM124J LM324AMX INTERNAL CIRCUIT DIAGRAM OF LM324N 8 pin ic lm324 comparator LM124 IC pin connection LM224J RETS124AX
    Text: LM124/LM224/LM324/LM2902 Low Power Quad Operational Amplifiers General Description Advantages The LM124 series consists of four independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single


    Original     		LM124/LM224/LM324/LM2902 LM124 LM124AWMLS 12-Jun-2001 19-Jul-2001] pdf/2000/LM124 LM124J voltage follower circuit using LM324 electronic power generator using transistor projects logic diagram of IC number LM124J LM324AMX INTERNAL CIRCUIT DIAGRAM OF LM324N 8 pin ic lm324 comparator LM124 IC pin connection LM224J RETS124AX PDF

    Untitled

    Abstract: No abstract text available
    Text: LM6162 High Speed Operational Amplifier General Description The LM6162 family of high-speed amplifiers exhibits an excellent speed-power product, delivering 300 V/µs and 100 MHz gain-bandwidth product stable for gains as low as +2 or −1 with only 5 mA of supply current. Further power


    Original     		LM6162 12-Jun-2002 5-Aug-2002] PDF

    TIP140

    Abstract: TIP142 TIP146 TIP142 TIP147 TIP141 TIP145 TIP147 tip 147
    Text: Datasheet H C o n tM l TIP140 TIP141 TIP142 NPN TIP145 TIP146 TIP147 PNP tm SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-218 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		TIP140 TIP141 TIP142 TIP145 TIP146 O-218 TIP140, TIP142 TIP147 TIP147 tip 147 PDF

    DS007787

    Abstract: lm158h LM158 national lm158 LM358AM LM158M lm358 vco LM358H lm358 slew rate LM158AH/883B
    Text: LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers General Description Advantages The LM158 series consists of two independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single power


    Original     		LM158/LM258/LM358/LM2904 LM158 4-Nov95 AN-116: LM158/LM258/LM358 1-Sep-2000] DS007787 lm158h LM158 national LM358AM LM158M lm358 vco LM358H lm358 slew rate LM158AH/883B PDF

    LM358

    Abstract: LM158AH LM358 basic information LM158J LM358H LM158 national LM358AM LM158 LM358 spice model VCO application Circuit using LM358
    Text: LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers General Description Advantages The LM158 series consists of two independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single power


    Original     		LM158/LM258/LM358/LM2904 LM158 AN-116: LM158/LM258/LM358 2-Sep-2000] LM358 LM158AH LM358 basic information LM158J LM358H LM158 national LM358AM LM358 spice model VCO application Circuit using LM358 PDF

    VCO application Circuit using LM358

    Abstract: LM258 lm358 smd dc to dc converters schematic diagram with LM358 lm358 current monitor analog to digital convert LM358 lm358 LM358 CROSS REFERENCE peak lm358 lm358 vco
    Text: LM158/LM258/LM358/LM2904 Low Power Dual Operational Amplifiers General Description Advantages The LM158 series consists of two independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single


    Original     		LM158/LM258/LM358/LM2904 LM158 AN-116: LM158/LM258/LM358 4-Nov-95 5-Aug-2002] VCO application Circuit using LM358 LM258 lm358 smd dc to dc converters schematic diagram with LM358 lm358 current monitor analog to digital convert LM358 lm358 LM358 CROSS REFERENCE peak lm358 lm358 vco PDF