ABB GB14048. 4
Abstract: ABB GB14048. 3 en iec 60721-3-3 F0009 abb CM-IWN en 60721-3-3 temperature temperature abb mtbf abb earth leakage relay GB14048 R0100
Text: Data sheet Coupling unit CM-IVN For expansion of the insulation monitoring relay CM-IWN.1 measuring range up to Un = 690 V AC and 1000 V DC 2CDC 251 081 S0009 The CM-IVN serves to extend the measuring range of the insulation monitoring relay CM-IWN.1 for monitoring the insulation resistance
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S0009
ABB GB14048. 4
ABB GB14048. 3
en iec 60721-3-3
F0009
abb CM-IWN
en 60721-3-3
temperature temperature abb mtbf
abb earth leakage relay
GB14048
R0100
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abb earth leakage relay
Abstract: gb14048.5 remote control of 230 volt motor using relay insulation monitoring relay en iec 60721-3-3 motor abb mtbf fuse abb mtbf relay 12 volt relay 24 volt R0200
Text: Data sheet Insulation monitoring relay CM-IWN.1 For unearthed AC, DC and mixed AC/DC systems up to Un = 400 V AC and 600 V DC The CM-IWN.1 serves to monitor insulation resistance in accordance with IEC 61557-8 in unearthed IT AC systems, IT AC systems with galvanically connected DC circuits, or unearthed IT
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S0009
abb earth leakage relay
gb14048.5
remote control of 230 volt motor using relay
insulation monitoring relay
en iec 60721-3-3
motor abb mtbf
fuse abb mtbf
relay 12 volt
relay 24 volt
R0200
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esquema
Abstract: Testo CONTROLE relais schema F0010 Ace1000 abb CM-IWN conexion
Text: CM-IVN Betriebs- und Montageanleitung Vorschaltmodul für Isolationsüberwachungsrelais CM-IWN.1 E Nota: Estas instrucciones no contienen todas las informaciones detalladas relativas a todos los tipos del producto ni pueden considerar todos los casos de operación. Todas las
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ABB GB14048. 3
Abstract: No abstract text available
Text: Data sheet Insulation monitoring relays CM-IWN.4/5/6 For unearthed AC, DC and mixed AC/DC systems up to Un = 400 V AC and 600 V DC Characteristics –– For monitoring the insulation resistance of unearthed IT systems up to Un = 400 V AC and 600 V DC
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CM300E3Y
Abstract: CM300E3Y-12E GE2 TRANSISTOR CM300E3
Text: W lßfEREK CM300E3 Y- 12E Powerex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Chopper IGBTMOD E-Series Module 300 Amperes/600 Volts Description: CM300E3Y-12E Chopper IGBTMOD™ E-Series Module 300 Amperes/600 Volts Powerex Chopper IGBTMOD™
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CM300E3
Amperes/600
CM300E3Y-12E
CM300E3Y-12E
72T4b21
QQQ72b2
CM300E3Y
GE2 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: PRIORITY CM O S 1M 128K X 8 Mask-Programmable ROM FEATURES • 131,072 words x 8 bit organization • Access time: 150 ns (MAX.) • Low power consumption: Operating: 192.5 mW (MAX.) Standby: 550jiW(MAX.) DESCRIPTION The LH531000B is a mask-programmable ROM
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550jiW
28-pin,
600-mil
450-mil
LH531000B
28-PIN
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mn1715
Abstract: No abstract text available
Text: EDI9G361024C 1024KX36SRAMModule 1024KX36StaticRAM CMOS, High SpeedModule Features 1024Kx36 bit C M O S Static The EDI9G361024C is a high speed 36 megabit Static RAM Random Access Memory module organized as 1024K words by 36 bits. This module • Access Times: 17,20 and 25
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EDI9G361024C
1024KX36SRAMModule
1024Kx36
1024KX36StaticRAM
EDI9G361024C
1024K
1024Kx4
EDI9G361024C17MNC
EDI9G361024C20MNC
EDI9G361024C25MNC
mn1715
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B511D
Abstract: No abstract text available
Text: HY5115A Series -HYUNDAI 2K N B-bit CM 0 5 5 RAM DESCRIPTION The HY5115A is a high-speed, law pow er and 2,D48 i B-bits CMOS sia lic RAM fabricated using Hyundai's high perform ance tw in tub CMOS process technology. This high reliability process coupled w ilh innovative circuit
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HY5115A
HY611
HY511
speed-B5/100/120/150ns
1DAD1-11-MAYB4
HYB11BAP
B511D
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CY7C161
Abstract: No abstract text available
Text: LOGIC DEVICES INC SbE D • SSbS'lOS 0 0 0 1 0 3 0 b ÊÊ _ 16KX 4 Static RAM L 7 C 1 6 1 /1 6 2 DESCRIPTION □ 16K x 4 Static RAM with Separate I/O , Transparent Write L7C161 , or High Impedance Write (L7C162) □ Auto-Powerdown Design □ Advanced CMOS Technology
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L7C161)
L7C162)
CY7C161/162
28-pin
L7C161
CY7C161
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M 9619 pnp
Abstract: transistor 9619 of IC 7824 M 9619 tl 7824 NEC TTE TT 2170 2SA1744 T460 T108-01
Text: NEC Z 1 > S i l i c o n s < * 7 P o w e r T r a n s i s t o r 2SA1 7 4 4 p n p x t »; □ > v =7 X i f f l 2SA1744 Ü , M Ì A X ' l - y + > r m k L X m yA $ t l t 2 ' < V - h 7 ->'X 9 T L o w VcE sat) T" hFE * s'S i^ C 0 T ' D C / D C r K M > ( T O : mm)
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2SA1744
T0-220
MP-45F)
PWS300
D13160JJ1V0DS00(
TD-7627)
2SA1744
25-tb
344-P
27-UU
M 9619 pnp
transistor 9619
of IC 7824
M 9619
tl 7824
NEC TTE
TT 2170
T460
T108-01
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Untitled
Abstract: No abstract text available
Text: K S 5 7 C2 5 0 4 4-Bit C M O S M i c r o c o n t r o l l e r ELECTRONICS Data S h e e t DESCRIPTION The KS57C2504 single-chip 4 -b it microcontroller is tabricated using an advanced CMOS process. With up to 320-dot LCD direct-drive capability, 8 -b it timer/counter, serial I/O, and comparator, the KS57C2504 otters an
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KS57C2504
320-dot
0011B.
KS57C2504
0000B.
1001B,
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tc787
Abstract: 2SK1959
Text: Mos M O S F ie ld E ffe c t T ra n s is to r 2S K 1959 2SK1959Ü 1.5 V lK fj] 9 4 ~TOi N -f- MOS F E T T " ^ - f i : m m f r o & * ) , K* tk '^ ^ fz ìs b , > X T -y h i O j: £/ T ^ f J X f£ a a o i & l î . i .5 ± 0.1 ^ IE J ì- b ! ìIT '- 1 ~ 0
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2SK1959
2SK1959Ã
TC-7875A
tc787
2SK1959
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CV7105
Abstract: No abstract text available
Text: NJM2247A/B mu m If l- NJM2247A/B i, ts ^5 — 7.— A — f >/1? — K (Y , T*To 7 - f y ^ l / 3 > ij, Y, ^ - T .A V R-Y, R-Y, X-<n&WM B-Y hP — =fc B - Y il- t ^ if ib t iS f o K T 'O T f f - t M S C J : U, fcnTtiC L T l ' i t . tt HJH2247ANI/BM • 5 V # .—
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NJM2247A/B
NJM2247A/BlÃ
njm2247am/bm
DMP20
165mV
CV7105
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27C64A
Abstract: Philips FA 145 CIRCUIT79 27C64A-12 27C64A-15 27C64A-20 27C64AI15 27C64AI20 27c64ad-c
Text: OEC 2 R iwn Philips C o m po n en ts-S ign etics Document No. 853-0081 ECN No. 01039 Date of Issue November 12,1990 Status Product Specification 27C 64A 64K-bit CMOS EPROM 8K x 8 Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES Philips Components-Signetics 27C64A
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27C64A
64K-bit
536-bit
0382N/4WCR1/1290
Philips FA 145
CIRCUIT79
27C64A-12
27C64A-15
27C64A-20
27C64AI15
27C64AI20
27c64ad-c
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phc51
Abstract: A0317
Text: HYUNDAI H Y 5 1 V 1 6 1 6 0 B S e r ie s 1 M x 16-bit CMOS DRAM with 2ÜÄ5 DESCRIPTION T he H Y51V 16160B is th e new generation and fa st dynam ic RAM organized 1,048,576 x 16-bit. The HY51V16160B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques
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16-bit
16160B
16-bit.
HY51V16160B
42/42pin
D55-10-MA
HY51V16160BJC
616CIBSIJC
phc51
A0317
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LMC660
Abstract: LMC6572AIM LMC6572AIN LMC6572BIN LMC6574 M08A TLV2322 TLV2324
Text: National LMC6574/LMC6572 ß Semiconductor LMC6574 Quad/LMC6572 Dual Low Voltage (2.7V and 3V Operational Amplifier General Description Low voltage operation and low power dissipation make the LMC6574/2 ideal for battery-powered systems. 3V amplifier performance is backed by 2.7V guarantees to
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LMC6574
Quad/LMC6572
LMC6574/2
TL/H/11934-15
TL/H/11934-13
TL/H/11934-14
TL/H/11934-16
LMC660
LMC6572AIM
LMC6572AIN
LMC6572BIN
M08A
TLV2322
TLV2324
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transmission lines Twisted Pair spice model
Abstract: CLC452 CLC452A8B CLC452AJ CLC452AJE CLC452AJM5 CLC452AJP CLC452ALC
Text: June 1999 National Q O zr ^ <D cn 1 9 CO w CLC452 Single Supply, Low-Power, High Output, Current Feedback Amplifier General Description Features The CLC452 has a new output stage that delivers high output drive current (100mA , but consumes minimal quiescent supply
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CLC452
100mA)
130MHz
00V/jas
transmission lines Twisted Pair spice model
CLC452A8B
CLC452AJ
CLC452AJE
CLC452AJM5
CLC452AJP
CLC452ALC
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siemens 3ld 25
Abstract: TA5C HYB3116405BT
Text: r i E u r f t k c j i ç m ç r a j INFORMATION NOTE F o u rth G e n e r a t io n 16M - D R A M s C h a ra c te risa tio n D ata 3 .3 V p ro d u cts "f n c I r^ C J mftjT0M11.DOC SiEM ENS _ 3,3V lé M - D H A M s
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inioifiM11
16M-DRAMs
siemens 3ld 25
TA5C
HYB3116405BT
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Untitled
Abstract: No abstract text available
Text: f i HFA3724 H A F R R IS S E M I C O N D U C T O R 400MHz Quadrature IF Modulator/Demodulator Ju ly 1996 Features Description • Integrates all IF Transmit and Receive Functions 0.2dB, 2° The Harris 2.4GHz PRISM chip set is a highly integrated five-chip solution for RF
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HFA3724
400MHz
HFA3724
5M-1982.
4302P71
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upd4217405-60
Abstract: NEC 4217405-60
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 42S 17405, 4217405 16 M -BIT D Y N A M IC R A M 4 M -W O R D B Y 4-BIT, E D O D escription T h e ìì P D 4 2 S 1 7 4 0 5 , 4 2 1 7 4 0 5 a re 4 ,1 9 4 ,3 04 w o rd s b y 4 b its C M O S d yn a m ic R A M s with o p tio n a l E D O .
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interfacing of RAM and ROM with 8085
Abstract: AD7511SD DB9 pin configuration AD7571 AD7571AQ AD7571BQ AD7571JN AD7571KN AD7574 D28B
Text: ANALOG DEVICES □ l'muo M,P-Compatible 10-Bit Plus Sign ADC FEATURES 10-Bit Plus Sign Resolution N o Missed Codes Over Full Tem p eratu re Range Conversion Tim e 80|*s D ifferential Analog V oltage Inputs, ± 1 0 V Range Serial and Parallel Data O utputs
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10-Bit
AD7571
80p-s.
interfacing of RAM and ROM with 8085
AD7511SD
DB9 pin configuration
AD7571AQ
AD7571BQ
AD7571JN
AD7571KN
AD7574
D28B
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PDF
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intel 8098
Abstract: MCS-96 architecture overview 8708 eprom 8098 instruction mcs 96 programming timer 8098 LF 8708 201AN 8X9XBH 4000M
Text: ra B U B H N M n r In te l 8098 /8398/8798 COMMERCIAL/EXPRESS HMOS MICROCONTROLLER • 8798: an 8098 w ith 8 Kbytes o f On-Chip EPROM ■ 8398: an 8098 w ith 8 Kbytes o f On-Chip ROM 232 Byte Register File Full Duplex Serial Port R eglster-to-R eglster Architecture
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10-Bit
16-Bit
intel 8098
MCS-96 architecture overview
8708 eprom
8098 instruction
mcs 96 programming timer
8098
LF 8708
201AN
8X9XBH
4000M
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PDF
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KS011902
Abstract: Bi17 ef KS0119Q2
Text: KS0119/KS0119Q2 MULTIMEDIA VIDEO VIDEO ENCODER The KS0119/KS0119Q2 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be dspteyed on either NTSC or PC monitors. There are two data inpul channels
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KS0119/KS0119Q2
KS0119/KS0119Q2
KS0119/KS0118Q2
KS011902
KS0119.
120Cl
RS-170A
Bi17 ef
KS0119Q2
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feature VMP 1
Abstract: 330 Ohmic resistor PSA 2900 GSA 62 gi 9628
Text: Tem ic U4092B TELEFUNKEN Semiconductors Monolithic Integrated Feature Phone Circuit Description The xc controlled telephone circuit U4092B is a linear integrated circuit for use in feature phones, answering machines and fax machines. It contains the speech circuit,
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U4092B
U4092B
D-74025
feature VMP 1
330 Ohmic resistor
PSA 2900
GSA 62
gi 9628
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