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    CMDD2004 Search Results

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    CMDD2004 Price and Stock

    Central Semiconductor Corp CMDD2004 TR PBFREE

    DIODE GEN PURP 250V 200MA SOD323
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    DigiKey CMDD2004 TR PBFREE Reel 9,000 3,000
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    CMDD2004 TR PBFREE Cut Tape 710 1
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    CMDD2004 TR PBFREE Digi-Reel 1
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    Avnet Americas CMDD2004 TR PBFREE Reel 12,000
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    Mouser Electronics CMDD2004 TR PBFREE
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    Central Semiconductor Corp CMDD2004 TR

    Silicon Switching Diode High Voltage 300V 4A 2-Pin SOD-323 Surface Mount T/R - Tape and Reel (Alt: CMDD2004 TR)
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    Avnet Americas CMDD2004 TR Reel 3,000
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    Central Semiconductor Corp CMDD2004

    RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 0.225A, 300V V(RRM), SILICON
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    Quest Components CMDD2004 500
    • 1 $0.18
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    CMDD2004 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CMDD2004 Central Semiconductor SUPERmini SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE Original PDF
    CMDD2004 Central Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SW 250V 200MA SOD323 Original PDF
    CMDD2004 TR Central Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 250V 200MA SOD323 Original PDF
    CMDD2004 TR PBFREE Central Semiconductor DIODE GEN PURP 250V 200MA SOD323 Original PDF

    CMDD2004 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c24 diode

    Abstract: No abstract text available
    Text: CMDD2004 SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The Central Semiconductor CMDD2004 is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for


    Original     		PDF CMDD2004 OD-323 100mA 24-June c24 diode

    Untitled

    Abstract: No abstract text available
    Text: CMDD2004 SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The Central Semiconductor CMDD2004 is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for


    Original     		PDF CMDD2004 CMDD2004 OD-323 100mA 24-June

    c24 diode

    Abstract: diode marking code 7 CMDD2004
    Text: Central CMDD2004 TM Semiconductor Corp. SUPERmini SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD2004 type is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount


    Original     		PDF CMDD2004 OD-323 100mA c24 diode diode marking code 7 CMDD2004

    c24 diode

    Abstract: CMDD2004
    Text: Central CMDD2004 TM Semiconductor Corp. SUPERmini SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMDD2004 is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed


    Original     		PDF CMDD2004 CMDD2004 OD-323 100mA c24 diode

    c24 diode

    Abstract: CMDD2004
    Text: CMDD2004 SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The Central Semiconductor CMDD2004 is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for


    Original     		PDF CMDD2004 CMDD2004 OD-323 100mA c24 diode

    Untitled

    Abstract: No abstract text available
    Text: Central CMDD2004 TM Semiconductor Corp. SUPERmini SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD2004 type is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount


    Original     		PDF CMDD2004 OD-323 100mA 13-August

    c24 diode

    Abstract: No abstract text available
    Text: Central CMDD2004 TM Semiconductor Corp. SUPERmini SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD2004 type is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount


    Original     		PDF CMDD2004 OD-323 100mA 31-October c24 diode

    CMOD2004

    Abstract: CPD80V CMDD2004 1N3070 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
    Text: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å


    Original     		PDF CPD80V CMPD2003 CMPD2004 CMPD2005 1N3070 CMDD2004 CMSD2004 CMOD2004 CMXD2004 CMLD2004 CMOD2004 CPD80V CMDD2004 1N3070 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004

    C 704 diode

    Abstract: DIODE R3 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
    Text: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å


    Original     		PDF CPD80V CMPD2003 CMPD2004 CMPD2005 1N3070 CMDD2004 CMSD2004 CMOD2004 CMXD2004 CMLD2004 C 704 diode DIODE R3 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004

    Untitled

    Abstract: No abstract text available
    Text: DIO 4439 Why Diodes SASP1 final _- 09/10/2014 01:41 Page 1 WHY DIODES – SASP1 Why DIODES? Diode and Rectifier Devices A Broad Range of Diode and Rectifier Devices Offering Solutions Such as the Following: Broad Range of Through-Hole, Surface-Mount and Leadless Packages Including the Following:


    Original     		PDF X3-DFN0603-2: A-M3/89A SMAJ10CA MMBZ27VALT1G PDLC05 DSOT0502 1SMA70AT3G SM05T1G ESD5Z12T1G SMCJ70CA

    CMSD4448

    Abstract: BAS21 SOD323 CMSD2004S
    Text: Issue Number │001 June 2011 New Product Announcement High-Voltage Switching Diodes • The BAS521 and BAS521LP available in the ultra-small plastic SMD packages. • The BAW101V SOT563 features 500mW power dissipation.  The MMBD3004BRM and MMBD5004BRM


    Original     		PDF BAS521 BAS521LP BAW101V OT563) 500mW MMBD3004BRM MMBD5004BRM MMBD5004 BAS20 BAS21, CMSD4448 BAS21 SOD323 CMSD2004S

    1N3070

    Abstract: CMDD2003 CMDD2004 CMPD2003 CMPD2004 CPD80
    Text: Central PROCESS TM Semiconductor Corp. CPD80 Switch Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 9.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization


    Original     		PDF CPD80 CMPD2003 CMPD2004 1N3070 CMDD2003 CMDD2004 22-October 1N3070 CMDD2003 CMDD2004 CMPD2003 CMPD2004 CPD80

    3SMC30A

    Abstract: CMPZ4614 P6SMB56CA CMSD4448 sod-80 stabistor 882L CMOZ20V STB-400 3smc60ca CMZ5945B
    Text: Diodes Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless Package Bottom View


    Original     		PDF OD-923 OT-923 OT-953 OD-523 OT-523 OT-563 OD-323 OT-323 OT-363 OD-123 3SMC30A CMPZ4614 P6SMB56CA CMSD4448 sod-80 stabistor 882L CMOZ20V STB-400 3smc60ca CMZ5945B

    CMOD2004

    Abstract: 1N3070 CMDD2004 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
    Text: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å


    Original     		PDF CPD80V CMPD2003 CMPD2004 CMPD2005 1N3070 CMDD2004 CMSD2004 CMOD2004 CMXD2004 CMLD2004 CMOD2004 1N3070 CMDD2004 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V

    MOTOROLA 2N5179

    Abstract: motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866
    Text: Central Semiconductor - Cross Reference Competitor Discontinued Part Replacements EOL Part # Manufacturer Name Central Semi Part # A12FR10 International Rectifier CR20-010R A12FR100 International Rectifier CR20-100R A12FR120 International Rectifier CR20-120R


    Original     		PDF A12FR10 CR20-010R A12FR100 CR20-100R A12FR120 CR20-120R A12FR20 CR20-020R A12FR40 CR20-040R MOTOROLA 2N5179 motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866

    2N3819 MOTOROLA

    Abstract: mmbr2857lt1 bcy59z BCY55 MBS4993 2N2222a PHILIPS SEMICONDUCTOR MOTOROLA 1N4751A 2N2222A zetex 2C4209WP MMBR2857
    Text: EOL Life Support Program Revised: 3 May 2007 EOL Life Support Program Listing as of 05/03/07 EOL ITEM# MANUFACTURER NAME A12FR10 A12FR100 A12FR120 A12FR20 A12FR40 A12FR60 A12FR80 A12F10 A12F100 A12F120 A12F20 A12F40 A12F60 A12F80 A16FR10 A16FR100 A16FR120


    Original     		PDF A12FR10 A12FR100 A12FR120 A12FR20 A12FR40 A12FR60 A12FR80 A12F10 A12F100 A12F120 2N3819 MOTOROLA mmbr2857lt1 bcy59z BCY55 MBS4993 2N2222a PHILIPS SEMICONDUCTOR MOTOROLA 1N4751A 2N2222A zetex 2C4209WP MMBR2857

    1N3070

    Abstract: DIODE 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
    Text: Central TM Semiconductor Corp. PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å


    Original     		PDF CPD80V CMPD2003 CMPD2004 CMPD2005 1N3070 CMDD2004 CMSD2004 CMOD2004 CMXD2004 CMLD2004 1N3070 DIODE 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V

    Untitled

    Abstract: No abstract text available
    Text: Central CMDD2004 Semiconductor Corp. SUPERmini SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD2004 type is a high voltage silicon switching diode man­ ufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount pack­


    OCR Scan     		PDF CMDD2004 100pA 100mA 31-October OD-323 OD-323

    c24 diode

    Abstract: No abstract text available
    Text: Central' CMDD2004 Semiconductor Corp. SUPERmini SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD2004 type is a high voltage silicon switching diode man­ ufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount pack­


    OCR Scan     		PDF CMDD2004 100mA CPD80 31-October CMDD2004 OD-323 OD-323 c24 diode

    CMPZ4124

    Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
    Text: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches


    OCR Scan     		PDF OT-23 350mW CMPT8099 CMPT2222A OT-23 OT-223 OT-89 CQ89D CQ89DS CMPS5061 CMPZ4124 CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B

    BAT 13003 D

    Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40
    Text: index/Cross Reference Industry Part Number Central Part Number CMXD4448 1MN10 10BQ015 CMSH1-20ML CMR1U-02M 10MF2 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M CMR1-10M 1N6484 1S2835 CMPD2836


    OCR Scan     		PDF 30WQ03F 30WQ04F 30WQ05F 30WQ06F 50WF10F 50WF20F 50WF30F 50WF40F BAL99 BAR42 BAT 13003 D SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40

    TRANSISTOR NPN BA RV SOT - 89

    Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
    Text: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes


    OCR Scan     		PDF CQ89N CQ89DS CQ89MS CQ89NS OT-89 CMPSS061 CMPS5062 CMPS5063 CMPS5064 CZS5064 TRANSISTOR NPN BA RV SOT - 89 bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124

    part MARKING k48

    Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
    Text: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E


    OCR Scan     		PDF CMOD2004 CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO BC846A CMSZ5250B CMST3904 BC846B part MARKING k48 marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2

    CMR1U-02M

    Abstract: CMSD4448 CMSH3-40 CMPZ4124 CMSH3-100 CXTA27 TR em 328 SO3903 BST60 CMPZ4614
    Text: index/Cross Reference Industry Part Number Central Part Number 1MN10 CMXD4448 10BQ015 CMSH1-20ML 10MF2 CMR1U-02M 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M 1N6484 CMR1-10M 1S2835 CMPD2836


    OCR Scan     		PDF 1MN10 CMXD4448 10BQ015 CMSH1-20ML 10MF2 CMR1U-02M 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M CMR1U-02M CMSD4448 CMSH3-40 CMPZ4124 CMSH3-100 CXTA27 TR em 328 SO3903 BST60 CMPZ4614