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    CMLD6001DO Price and Stock

    Central Semiconductor Corp CMLD6001DO-TR-PBFREE

    DIODE ARRAY GP 75V 250MA SOT563
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    DigiKey CMLD6001DO-TR-PBFREE Digi-Reel 15,721 1
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    • 1000 $0.28309
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    CMLD6001DO-TR-PBFREE Cut Tape 15,721 1
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    CMLD6001DO-TR-PBFREE Reel 15,000 3,000
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    Central Semiconductor Corp CMLD6001DO TR

    Diode Switching 100V 250mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: CMLD6001DO TR)
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    Avnet Americas CMLD6001DO TR Reel 3,000
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    Central Semiconductor Corp CMLD6001DO TR PBFREE

    Diode Ultra-Low Leakage Switching 100V 250mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: CMLD6001DO TR PBFR)
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    Avnet Americas CMLD6001DO TR PBFREE Reel 6,000
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    Mouser Electronics CMLD6001DO TR PBFREE 17,711
    • 1 $0.72
    • 10 $0.516
    • 100 $0.354
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    CMLD6001DO Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CMLD6001DO Central Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SW DUAL 75V 250MA SOT-563 Original PDF
    CMLD6001DO Central Semiconductor SMD Low Leakage Diode Dual: Opposing Polarity Original PDF
    CMLD6001DO TR Central Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE GEN PURP 75V 250MA SOT563 Original PDF
    CMLD6001DO TR PBFREE Central Semiconductor DIODE GEN PURP 75V 250MA SOT563 Original PDF

    CMLD6001DO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMLD6001DO

    Abstract: No abstract text available
    Text: CMLD6001DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two 2 Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial


    Original     		PDF CMLD6001DO OT-563 100mA 18-January CMLD6001DO

    c60 equivalent

    Abstract: CMLD6001DO
    Text: CMLD6001DO SURFACE MOUNT PICOmini DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two 2 Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial


    Original     		PDF CMLD6001DO OT-563 100mA c60 equivalent CMLD6001DO

    CMLD6001DO

    Abstract: No abstract text available
    Text: Central CMLD6001DO TM Semiconductor Corp. SURFACE MOUNT PICOmini DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two 2 Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial


    Original     		PDF CMLD6001DO OT-563 100mA CMLD6001DO

    Untitled

    Abstract: No abstract text available
    Text: CMLD6001DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING ULTRA LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two 2 Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial


    Original     		PDF CMLD6001DO OT-563 Operat250 100mA

    Untitled

    Abstract: No abstract text available
    Text: CMLD6001DO SURFACE MOUNT SILICON DUAL, ISOLATED, OPPOSING ULTRA LOW LEAKAGE SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains two 2 isolated opposing configuration, silicon switching diodes, manufactured by the epitaxial


    Original     		PDF CMLD6001DO OT-563 100mA

    Untitled

    Abstract: No abstract text available
    Text: CMLD6001DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING ULTRA LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two 2 Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial


    Original     		PDF CMLD6001DO OT-563 100mA

    marking code pa sot-26

    Abstract: smd SOT26 SMD MARKING CODE 26 sot-363 CMDD6001 smd transistor marking PA SMD MARKING CODE sot 26 smd marking 30 SOD 23 marking CODE R SMD DIODE on semiconductor marking code sot
    Text: PRODUCT announcement Ultra Low Leakage Diodes in SOT-26, SOT-23, SOT-363, SOD-323, SOD-523 and SOT-563 packages SOT-26 SOT-23 SOT-363 SOD-323 SOD-523 SOT-563 features • Ultra Low Leakage: 500pA max. • VRRM: 100Volts • Available in six space saving SMD packages


    Original     		PDF OT-26, OT-23, OT-363, OD-323, OD-523 OT-563 OT-26 OT-23 OT-363 OD-323 marking code pa sot-26 smd SOT26 SMD MARKING CODE 26 sot-363 CMDD6001 smd transistor marking PA SMD MARKING CODE sot 26 smd marking 30 SOD 23 marking CODE R SMD DIODE on semiconductor marking code sot

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    r2 137

    Abstract: CMPD6001 CPD91V CMDD6001 CMLD6001 CMLD6001DO CMOD6001
    Text: PROCESS CPD91V Switching Diode Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au-As - 12,000Å


    Original     		PDF CPD91V CMPD6001 CMOD6001 CMLD6001 CMLD6001DO CMDD6001 r2 137 CPD91V CMDD6001 CMLD6001 CMLD6001DO CMOD6001

    CMDD6001

    Abstract: CMLD6001 CMLD6001DO CMOD6001 CMPD6001 CPD91V
    Text: PROCESS CPD91V Switching Diode Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au - 18,000Å


    Original     		PDF CPD91V CMPD6001 CMOD6001 CMLD6001 CMLD6001DO CMDD6001 Aug91V CMDD6001 CMLD6001 CMLD6001DO CMOD6001 CPD91V

    3SMC30A

    Abstract: CMPZ4614 P6SMB56CA CMSD4448 sod-80 stabistor 882L CMOZ20V STB-400 3smc60ca CMZ5945B
    Text: Diodes Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless Package Bottom View


    Original     		PDF OD-923 OT-923 OT-953 OD-523 OT-523 OT-563 OD-323 OT-323 OT-363 OD-123 3SMC30A CMPZ4614 P6SMB56CA CMSD4448 sod-80 stabistor 882L CMOZ20V STB-400 3smc60ca CMZ5945B

    CPD91V

    Abstract: CMDD6001 CMLD6001 CMLD6001DO CMOD6001 CMPD6001
    Text: PROCESS CPD91V Central Switching Diode Semiconductor Corp. Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization


    Original     		PDF CPD91V CMPD6001 CMOD6001 CMLD6001 CMLD6001DO CMDD6001 CPD91V CMDD6001 CMLD6001 CMLD6001DO CMOD6001

    diode

    Abstract: CMDD6001 CMLD6001 CMLD6001DO CMOD6001 CMPD6001 CPD91 11x11
    Text: PROCESS CPD91 Central Switching Diode Semiconductor Corp. Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 9.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization


    Original     		PDF CPD91 CMPD6001 CMOD6001 CMLD6001 CMLD6001DO CMDD6001 diode CMDD6001 CMLD6001 CMLD6001DO CMOD6001 CPD91 11x11

    CMPZ4124

    Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
    Text: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches


    OCR Scan     		PDF OT-23 350mW CMPT8099 CMPT2222A OT-23 OT-223 OT-89 CQ89D CQ89DS CMPS5061 CMPZ4124 CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B