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    CMOS 40 Search Results

    CMOS 40 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    MG80C186XL-20/R Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy
    MD87C51-16/B Rochester Electronics LLC Microcontroller, CMOS Visit Rochester Electronics LLC Buy
    A80C286-12 Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy
    SF Impression Pixel

    CMOS 40 Price and Stock

    KYOCERA Connector Products Division TCG075VGLDA-G20

    TFT Displays & Accessories 250NITS,TN,CMOS,40KH LED,CCC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI TCG075VGLDA-G20 Box 40
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    • 1000 $168.25
    • 10000 $168.25
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    KYOCERA Connector Products Division TCG057VGLCCANN-GN20

    TFT Displays & Accessories 5.7" VGA CMOS 500nits 40kH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI TCG057VGLCCANN-GN20 Bulk 40
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    CMOS 40 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    V62C3161024L

    Abstract: No abstract text available
    Text: V62C3161024L L Ultra Low Power 64K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 40mA ICC at 55ns - Stand-by: 5 µA (CMOS input/output) 1 µA (CMOS input/output, L version) TheV62C3161024L is a Low Power CMOS Static RAM


    Original     		V62C3161024L TheV62C3161024L I/O16. PDF

    VG264265BJ

    Abstract: VG264265BJ-4 VG26V4265CJ
    Text: Preiminary VIS VG26V4265CJ 262,144x16-Bit CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit designtechnologies it is packaged in JEDEC standard 40 - pin plastic SOJ package.


    Original     		VG26V4265CJ 144x16-Bit 40/50/60ns 40-PIN 1G5-0113 VG264265BJ-4 VG264265BJ-5 VG264265BJ-6 VG26V4265BJ-5 VG264265BJ PDF

    VG264265BJ

    Abstract: VG264265 VG264265BJ-4 vg264265bj-35 1G5-0017 VG3617801AT VG3617801AT-10 vg264265b
    Text: VG264265BJ 262,144x16-Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262,144 - words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technology. It is packaged in JEDEC standard 40 - pin plastic SOJ package.


    Original     		VG264265BJ 144x16-Bit 35/40/45/50ns 1G5-0017 VG264265 VG264265BJ-4 vg264265bj-35 1G5-0017 VG3617801AT VG3617801AT-10 vg264265b PDF

    hpcl 7721

    Abstract: 82c250 Application Note
    Text: 40 ns Propagation Delay, CMOS Optocoupler HCPL-7720 HCPL-7721 HCPL-0720 HCPL-0721 Features Basic building blocks of the HCPL-772X/072X are a CMOS LED driver IC, a high speed LED and a CMOS detector IC. A CMOS logic input signal controls the LED driver IC which supplies current to the LED. The


    Original     		HCPL7720 HCPL7721 HCPL0720 HCPL0721 HCPL-072X, HCPL-772X HCPL-072X HCPL-061N hpcl 7721 82c250 Application Note PDF

    Untitled

    Abstract: No abstract text available
    Text: FOD0708 Single Channel CMOS Optocoupler, FOD0738 Dual Channel CMOS Optocoupler Features • ■ ■ ■ ■ ■ ■ ■ ■ General Description +5V CMOS compatibility 15ns typical pulse width distortion 30ns max. pulse width distortion 40ns max. propagation delay skew


    Original     		FOD0708 FOD0738 10kV/Â E90700) FOD0708, PDF

    Untitled

    Abstract: No abstract text available
    Text: FM93C66 4K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The FM93C66 device is 4096 bits of CMOS non-volatile electrically erasable memory organized as 256x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS


    Original     		FM93C66 256x16 FM93C66 PDF

    14504BG

    Abstract: MC14504B MC14504BDG MC1450*B
    Text: MC14504B Hex Level Shifter for TTL to CMOS or CMOS to CMOS The MC14504B is a hex non−inverting level shifter using CMOS technology. The level shifter will shift a TTL signal to CMOS logic levels for any CMOS supply voltage between 5 and 15 volts. A control


    Original     		MC14504B PDIP-16 MC14504BCP SOIC-16 TSSOP-16 SOEIAJ-16 MC14504B/D 14504BG MC14504BDG MC1450*B PDF

    14504BG

    Abstract: 14504B MC14504BCP MC14504 504B 948F MC14504B MC14504BCPG MC14504BD MC14504BDG
    Text: MC14504B Hex Level Shifter for TTL to CMOS or CMOS to CMOS The MC14504B is a hex non−inverting level shifter using CMOS technology. The level shifter will shift a TTL signal to CMOS logic levels for any CMOS supply voltage between 5 and 15 volts. A control


    Original     		MC14504B MC14504B MC14504B/D 14504BG 14504B MC14504BCP MC14504 504B 948F MC14504BCPG MC14504BD MC14504BDG PDF

    14504B

    Abstract: MC14504bcp MC14504B 504B 948F MC14504BD MC14504BDR2 MC14504BDT MC14504BF
    Text: MC14504B Hex Level Shifter for TTL to CMOS or CMOS to CMOS The MC14504B is a hex non–inverting level shifter using CMOS technology. The level shifter will shift a TTL signal to CMOS logic levels for any CMOS supply voltage between 5 and 15 volts. A control


    Original     		MC14504B MC14504B r14525 MC14504B/D 14504B MC14504bcp 504B 948F MC14504BD MC14504BDR2 MC14504BDT MC14504BF PDF

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


    OCR Scan     		IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02 PDF

    Untitled

    Abstract: No abstract text available
    Text: PACKAGE DIMENSIONS CMOS DRAM PLASTIC DUAL IN-LINE PACKAGE 407 ELECTRONICS PACKAGE DIMENSIONS CMOS DRAM PLASTIC ZIGZAG IN-LINE PACKAGE 408 ELECTRONICS PACKAGE DIMENSIONS CMOS DRAM PLASTIC SMALL OUT-LINE J-LEAD 409 ELECTRONICS PACKAGE DIMENSIONS CMOS DRAM PLASTIC SMALL OUT-LINE J-LEAD


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Hitachi Bi-CMOS/CMOS Logic HD74BC/AC/HC/UH Series DATA BOOK HITACHI ADE-405-008


    OCR Scan     		HD74BC/AC/HC/UH ADE-405-008 PDF

    FM93C66

    Abstract: FM93C66E FM93C66V M08A MTC08
    Text: SEM ICONDUCTOR TM 4K-Bit Serial CMOS EEPROM FM93C66 4K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface Features The FM93C66 device is 4096 bits of CMOS non-volatile electri­ cally erasable memory organized as 256x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS


    OCR Scan     		FM93C66 FM93C66 256x16 FM93C66E FM93C66V M08A MTC08 PDF

    d 65632

    Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
    Text: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: abêê . * * - * * » static CMOS _ Family ol ROMs March 1992 Table 2 continued : AMI HIGH DENSITY FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Device Name S63312 S63302 S63414 S63434 Process CMOS CMOS CMOS CMOS CMOS Capacity 2 Meg


    OCR Scan     		S63312 S63302 S63414 S63434 S63444 PDF

    S634000

    Abstract: S63512 S63256
    Text: Static CMOS Family ol ROMs AIM!•Semiconductors March 1992 Table 1 continued : AMI LOW DENSITY FAMILY OF ROMS S63256 S63512 S631000/S631001 S632000 S634000 Process CMOS CMOS CMOS CMOS CMOS Capacity 256K/128K 512K 1 Meg 2 Meg 4 Meg Organization 32Kx8 64Kx8


    OCR Scan     		S63256 256K/128K 32Kx8 S63512 64Kx8 S631000/S631001 S632000 S634000 512Kx8 0014GS4 S634000 S63512 S63256 PDF

    Untitled

    Abstract: No abstract text available
    Text: static CMOS _ Family of ROMs March 1992 III AMI LOW DENSITY FAMILY OF ROMS Table 1: S6316 S6333/S63332 S63364 S6364 S63128 Process CMOS CMOS CMOS CMOS CMOS Capacity 16K 32K 64K 64K 128K Organization 2Kx 8 4Kx8 8Kx8 8Kx8 16Kx8 Compatible EPROM


    OCR Scan     		S6316 S6333/S63332 S63364 S6364 S63128 16Kx8 PDF

    Untitled

    Abstract: No abstract text available
    Text: • IDT 70S DG127M0 >402.5771 ■ D bbE Integrated Device Technology, Inc. FAST CMOS 16-BIT REGISTERED TRANSCEIVER FEATURES: > Common features: - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions Typical tsK o (Output Skew) < 250ps


    OCR Scan     		DG127M0 16-BIT 250ps MIL-STD-883, 200pF, FCT16952AT/BT/CT/ET: MA2S771 E48-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 37E J> INTERNATIONAL C M O S 40 40707 0000347 7 T-46-19-07 INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL 18CV8-15/PEEL™18CV8-20 CMOS Programmable Electrically Erasable Logic Devic6 Features • Architectural Flexibility Advanced CMOS EEPROM Technology — —


    OCR Scan     		T-46-19-07 18CV8-15/PEELâ 18CV8-20 105mA 18CV8-15 15nsmax 50MHz 18CV8-20: PDF

    Untitled

    Abstract: No abstract text available
    Text: KM64258C CMOS SRAM 65,536 WORDx4 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA(max.) Operating : KM64258C-12 : 150mA (max.) KM64258C-15: 140mA (max.)


    OCR Scan     		KM64258C KM64258C-12 150mA KM64258C-15: 140mA KM64258C-20: 130mA KM64258CJ 28-SQJ-300 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM681002 CMOS SRAM 131,072 WORD x 8 Bit Highspeed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM681002J-15:170mA (Max.)


    OCR Scan     		KM681002 KM681002J-15 170mA KM681002J-17: 160mA KM681002J-20: 150mA KM681002J: 32-Pin KM681002 PDF

    KM641003J

    Abstract: No abstract text available
    Text: PRELIMINARY KM641003 CMOS SRAM 262,144 WORD x 4 Bit Highspeed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM641003J-15: 170mA (Max.)


    OCR Scan     		KM641003 KM641003J-15: 170mA KM641003J-17: 160mA KM641003J-20: 150mA KM641003J: 32-Pin KM641003 KM641003J PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM64258C 65,536 WORDx4 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA(max.) Operating : KM64258C-12 : 150mA (max.) KM64258C-15 : 140mA (max.)


    OCR Scan     		KM64258C KM64258C-12 150mA KM64258C-15 140mA KM64258C-20 130mA KM64258CJ 28-SQJ-300 64258C PDF

    MC145043

    Abstract: level shifter . CMOS to TTL
    Text: MOTOROLA CMOS SSI LO W -POW ER C O M P L E M E N T A R Y MO S HEX LEVEL SHIFTER FOR TTL to CMOS or CMOS to CMOS TTL or CMOS to CMOS HEX LEVEL SHIFTER The MC145043 is a hex non-inverting level shifter using CMOS technology. The level shifter w ill sh ift a T T L signal to CMOS logic


    OCR Scan     		MC145043 level shifter . CMOS to TTL PDF