BU16000 Series
Abstract: BU16503 BU25507 BU16513 BU16311 BU25309 16848 BU25306 BU25307 BU25308
Text: CMOS Gate Array CMOS Gate Array High Speed CMOS Gate Array BU25000 Series The BU25000 series gate arrays have a Sea-of-Gates SOG structure fabricated with a 0.5 micro metre CMOS process. The BU25300 is the base family for 3V systems, and the BU25500 Series is the base sevies for the 5V systems.
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BU25000
BU25300
BU25500
BU25306
BU25307
BU25308
BU25309
BU25310
BU25311
BU16000 Series
BU16503
BU25507
BU16513
BU16311
BU25309
16848
BU25306
BU25307
BU25308
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F611
Abstract: L302 L611
Text: NEC Electronics Inc. CMOS-8LH 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high
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35-micron)
A11169EU1V0DS00
F611
L302
L611
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pin diagrams of basic gates
Abstract: BGA and QFP Package Nand gate Crystal Oscillator 272000 astro tool HQFP-208 MCM NAND qcm 5 sim 980 CE61
Text: To Top / Lineup / Index Product Line-up FUJITSU Semicustom Products Semicustom Products Gate arrays Sea-of-Gate CMOS Macro-embedded type cell arrays CMOS Standard cell CMOS Semicustom microcontrollers QCM series* ASTRO NT Bi-CMOS SIM/PLL SERIES Bi-CMOS SAW PLL
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No Turnaround RAM
Abstract: CX2001 cx2030 QYH500 CHIPX CX2000 CX2002 CX2032 CX2041 CX2081
Text: CX2000 0.6µ µ/0.5µ µ CMOS Fast-turn Gate Array Product Family Introduction CX2001, 0.6µ CMOS Gate Array Family The CX2001 is a fast-turn, 0.6µ, CMOS, triple metal gate array family. The CX2001 density ranges from 20k to 120k usable gates, plus up to
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CX2000
CX2001,
CX2001
CX2000,
QYH500,
No Turnaround RAM
cx2030
QYH500
CHIPX
CX2000
CX2002
CX2032
CX2041
CX2081
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CG46533
Abstract: CG46713 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50 CE46F60 CE46F70 BGA-35
Text: November 1995 Edition 1.5 DATA SHEET CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 µm drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 µm drawn channel length, digital CMOS embedded gate array
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CG/CE46
ASIC-DS-20084-11/95
CG46533
CG46713
CE46F10
CE46F20
CE46F30
CE46F40
CE46F50
CE46F60
CE46F70
BGA-35
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transistor f422
Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for
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50-MICRON
PD658xx
transistor f422
transistor f423
f422 transistor
transistor f421
BV09
F423
fet 13187
RJ4B
L442
bvoe
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F611
Abstract: No abstract text available
Text: NEC Electronics Inc. CMOS-8LHD 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary Description April 1996 Figure 1. CMOS-8LHD Package Options: BGA & QFP NEC's CMOS-8LHD gate-array family combines cellbased-level densities with the fast time-to-market and low
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35-micron)
A10616EU1V0DS00
F611
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transistor Bc 540
Abstract: BC 241 BC 511 description of transistor bc 148 pf958 SLA6028 bc 148 transistor 107ps BC 247 transistor bc 548
Text: PF958-02 SLA60000 Series High Density Gate Array ● 0.25µm CMOS Gate Array ● Low power consumption ● Covered from 99k to 2,519k raw gates • DESCRIPTION The SLA60000 Series are CMOS Gate Arrays which are adopting on 0.25µm silicon gate process with 3
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PF958-02
SLA60000
107ps
107ps
270ps
1600ps
transistor Bc 540
BC 241
BC 511
description of transistor bc 148
pf958
SLA6028
bc 148 transistor
BC 247
transistor bc 548
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uPD65801
Abstract: UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813
Text: NEC Electronics Inc. CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, submicron gate arrays, targeted for applications requiring extensive integration and high speeds. The device
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PD65800
uPD65801
UPD65812
uPD65800
PD65810
PD65811
CMOS Transmission gate Specifications
uPD65806
UPD65804
uPD65802
uPD65813
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sla6050
Abstract: SLA6270 SLA6080 SLA6430 SLA6620 SLA6000 AA132 SLA6270* plcc F44-6 SLA6140
Text: SLA6000 / - y .2 ' CMOS HIGH SPEED GATE ARRAY • • • • High Speed Silicon Gate CMOS Technology TTL and CMOS I/O Compatible High Output Drive Compatible Gate Densities from 513 to 6,206 Gates • DESCRIPTION The SLA6000 series consists of a group of 8 CMOS gate arrays with gate counts from 513 to 6,206 gates. The
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SLA6000
SLA6000
F44-6
F52-6
F60-6
F60-5
F80-5
F100-5
M24-2
M28-2
sla6050
SLA6270
SLA6080
SLA6430
SLA6620
AA132
SLA6270* plcc
F44-6
SLA6140
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BU16503
Abstract: BU16307 BU16515 bu16531
Text: CMOS Gate Arrays 0.6 /¿m CMOS Gate Array BU16K Family The ROHM BU16K family of CMOS gate array ICs are fabricated using ROHM’s unique 0.6 /¿m submicron process. These gate array are compatible with ROHM’s new ISM model and have reduced noise. Series line-up
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BU16K
BU16300
BU16500
BU16303
BU16309
BU16310
BU16311
BU16503
BU16508
BU16307
BU16515
bu16531
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4009S
Abstract: LZ95300 lz93 LZ95
Text: CM O S Gate Array LZ93 Series LZ93 Series • CMOS Gate Array Description ■ The LZ93 series CMOS gate array provides 300 to 5000 gates of line up with high speed and low power consumption. It is fabricated using 1.6 ,«m CMOS silicon gate/ double metal technology.
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LZ93600
LZ93300
LZ931100
LZ931600.
4009S
LZ95300
lz93
LZ95
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LZ95300
Abstract: SHARP LZ93 LZ95
Text: CMOS Gate Array CMOS Gate Array Gate Array Series High Speed Low Power Supply High Speed BiCMOS LZ93 Series LZ95 Series LZ96 Series LZ97 Series ' F.O. = 3 , Al = 2mm 300 to 5000 gates, 1.7ns/gate* 300 to 10000 gates, 1.2ns/gate* 300 to 4000 gates, 9.5ns/gate*
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LZ93300
LZ95300
LZ96300
LZ97600
LZ93600
LZ95650
LZ96650
LZ931000
LZ931100
LZ951170
SHARP LZ93
LZ95
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Untitled
Abstract: No abstract text available
Text: Product Brief — Microelectronics ATT656 Series CMOS Gate Arrays Features Description • 1.0 |j.m CMOS Si-gate triple-layer metal process technology; 0.75 |^m effective channel length The ATT656 series of CMOS gate arrays combines the leading edge technology necessary
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ATT656
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74 Series IC Manual
Abstract: V34B LZ95 CMOS IC MANUAL
Text: SUPPORT SYSTEM FOR GATE ARRAY/CELL-BASED IC • CELL-BASED ICs SF ASIC <CMOS 5A/G/F/A Series> Model No. CMOS 5A CMOS G CMOS F CMOS A Maximum gate count 30 000 14 000 50 000 120 000 Delay time at 5 V Internal gate 0.9 ns 0.9 ns 0.5 ns 0.4 ns Input buffer
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ATT65630
Abstract: 65630 ATT65654 ci 7495 ATT65636 ttl 7495 ATT65640 ATT65646 ATT65650 ATT65658
Text: Product Brief = AT&T F Microelectronics ATT656 Series CMOS Gate Arrays Features Description • 1.0 im CMOS Si-gate triple-layer metal process technology; 0.75 |xm effective channel length The ATT656 series of CMOS gate arrays combines the leading edge technology necessary
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ATT656
ATT65630
65630
ATT65654
ci 7495
ATT65636
ttl 7495
ATT65640
ATT65646
ATT65650
ATT65658
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d 65632
Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Text: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products
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z63n
Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W
Text: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us ing a 0.8 micron drawn twin well silicon gate process
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M6008X
MDS-GA-02-03-91
z63n
t28000
z65n
07in
M6008
mitsubishi lable
fr1s
MITSUBISHI GATE ARRAY
z66n
R12W
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74LS382
Abstract: C1602A C350AVB 74LS08 fan-in 74ls517 74LS556 74LS183 74LS86 full adder MB64H 74LS381
Text: ix u jD U Lu ra n ctiu F U JIT S U _ mmm CWiOS Gate Array GENERAL INFORMATION The Fujitsu CMOS gate array family consists of twentyeight devlcs types which are fabricated with advanced silicon gate CMOS technology. And more than 14devlc«s are coming. Fujitsu CMOS gate array are configured In a
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veF178
74LS181
74LS190
F191H
74LS191
74LS192
74LS193
74LS194A
74LS195A
74S260
74LS382
C1602A
C350AVB
74LS08 fan-in
74ls517
74LS556
74LS183
74LS86 full adder
MB64H
74LS381
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sla7800
Abstract: TTL 7490 7905 TL 7490 SLA7000 F44-6 SLA7160 SLA7220 SLA7340 SLA7490
Text: S L A 7 0 0 0 s e r ie s CMOS HIGH SPEED GATE ARRAY •DESCRIPTION The SLA7000 Series consists of a group of 6 CMOS gate arrays with gate counts from 1,632 to 16,250 gates. The series is fabricated utilizing our 1.5 micron high speed CMOS silicon gate technology to achieve
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SLA7000series
SLA7000
sla7000sÂ
sla7800
TTL 7490
7905
TL 7490
F44-6
SLA7160
SLA7220
SLA7340
SLA7490
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nec d 588
Abstract: nec naming rule nec product naming rule NEC CMOS-4
Text: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required
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35-MICRON
66MHz
nec d 588
nec naming rule
nec product naming rule
NEC CMOS-4
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RS flip flop IC
Abstract: transistor 6bn T flip flop IC 74LS series logic gates 3 input or gate RS flip flop cmos RS FLIP FLOP LAYOUT 1 bit full adder 1 bit full adder with carry 1-Bit full adder 7400 2-input nand gate
Text: MA Series 2.5 MICRON SILICON-GATE CMOS GATE ARRAYS ./m a t r a -HARRIS SEMICONDUCTOR JULY 1986 2.5/a/1 METAL LAYER HIGH SPEED CMOS GATE ARRAYS UP TO 25 MHz INTERNAL OPERATING FREQUENCY Features Description • HIGH SPEED CMOS : 2 NS/G ATE TYPICAL PROPAGATION DELAY.
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6S20U'
RS flip flop IC
transistor 6bn
T flip flop IC
74LS series logic gates 3 input or gate
RS flip flop cmos
RS FLIP FLOP LAYOUT
1 bit full adder
1 bit full adder with carry
1-Bit full adder
7400 2-input nand gate
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SLA6270
Abstract: SLA6140 sla6430 Sla6000 SLA6080
Text: SbE D S-n 0 S SYSTEMS INC 7 ^ 32 ^ 0*1 00014Ô0 35b • SLA6000 CMOS HIGH SPEED GATE ARRAY • • • • High Speed Silicon Gate CMOS Technology TTL and CMOS I/O Compatible High Output Drive Compatible Gate Densities from 513 to 6,206 Gates ■ DESCRIPTION
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SLA6000
SLA6000
Q0014fi2
SLA6270
SLA6140
sla6430
SLA6080
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m60013
Abstract: M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043
Text: A m its u b is h i CMOS GATE ARRAYS ELECTRONIC DEVICE GROUP Mitsubishi CMOS Gate Arrays INTRODUCTION Mitsubishi offers three fami lies of CMOS gate arrays: 1.0 /im, 1.3 /j.m, and 2.0 ji.m, with usable gates ranging from 200 to 35,000. The 1.0 and 1.3 p.m devices are
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MDS-GA-11-90-RK
m60013
M60016
m60011
M60014
z46n
M60030
M60024
Z24N
M60012
m60043
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