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    CMOS MSI Search Results

    CMOS MSI Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    MG80C186XL-20/R Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy
    MD87C51-16/B Rochester Electronics LLC Microcontroller, CMOS Visit Rochester Electronics LLC Buy
    A80C286-12 Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy

    CMOS MSI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSI Logic

    Abstract: UT54ACS14E ut54acts541e UT54ACTS02E UT54ACS14 Tri-State Buffer CMOS cmos msi data book cmos TTL LOGIC DATA BOOK UT54ACS373
    Text: Aeroflex MSI Logic IBIS model Buffer Identification 4/16/2009 Tri-State Devices Input Buffer CMOS TTL Output Buffer 8mA 8mA UT54ACS273 UT54ACTS04 CMOS CMOS E TTL TTL (E) 8mA 8mA 8mA 8mA UT54ACS273 UT54ACS02E UT54ACTS04 UT54ACTS08E CMOS TTL 8mA 8mA UT54ACS273


    Original     		PDF UT54ACS273 UT54ACTS04 UT54ACS02E UT54ACTS08E MSI Logic UT54ACS14E ut54acts541e UT54ACTS02E UT54ACS14 Tri-State Buffer CMOS cmos msi data book cmos TTL LOGIC DATA BOOK UT54ACS373

    CD4504BMS

    Abstract: IOH15
    Text: CD4504BMS CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation December 1992 Features Pinout • High Voltage Type 20V Rating CD4504BMS TOP VIEW • Independence of Power Supply Sequence Considerations - VCC can Exceed VDD - Input Signals can Exceed Both VCC and VDD


    Original     		PDF CD4504BMS CD4504BMS IOH15

    level shifter from TTL to CMOS

    Abstract: 14KA "Intersil Corporation 1999" B Series CMOS CD4504BMS IOH15 cd4504
    Text: CD4504BMS CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation December 1992 Features Pinout • High Voltage Type 20V Rating CD4504BMS TOP VIEW • Independence of Power Supply Sequence Considerations - VCC can Exceed VDD - Input Signals can Exceed Both VCC and VDD


    Original     		PDF CD4504BMS level shifter from TTL to CMOS 14KA "Intersil Corporation 1999" B Series CMOS CD4504BMS IOH15 cd4504

    level shifter from TTL to CMOS

    Abstract: CD4504BMS IOH15 CD4504
    Text: CD4504BMS S E M I C O N D U C T O R CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation December 1992 Features Pinout • High Voltage Type 20V Rating CD4504BMS TOP VIEW • Independence of Power Supply Sequence Considerations - VCC can Exceed VDD


    Original     		PDF CD4504BMS level shifter from TTL to CMOS CD4504BMS IOH15 CD4504

    74xx74

    Abstract: 74xx163 74xx138 74xx74 data sheet ACTQ244 74xx00 schematic diagram of laptop inverter 74ACXX ALS TTL family characteristics AC244
    Text: Revised January 2000 FACT Descriptions and Family Characteristics Fairchild Semiconductor Advanced CMOS Technology —FACT—Logic Fairchild Semiconductor introduced FACT Fairchild Advanced CMOS Technology logic, a family of high speed advanced CMOS circuits, in 1985.


    Original     		PDF 74ACXX 74xx74 74xx163 74xx138 74xx74 data sheet ACTQ244 74xx00 schematic diagram of laptop inverter ALS TTL family characteristics AC244

    MC14513B

    Abstract: "MOTOROLA CMOS LOGIC DATA" BCD TO EVEN SEGMENT HTL LOGIC MC14070B MC14511B MC14XXXBCL MC14XXXBCP TTL display 7
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14513B BCD-To-Seven Segment Latch/Decoder/Driver L SUFFIX CERAMIC CASE 726 CMOS MSI Low–Power Complementary MOS The MC14513B BCD–to–seven segment latch/decoder/driver is constructed with complementary MOS (CMOS) enhancement mode devices


    Original     		PDF MC14513B MC14513B MC14513B/D* MC14513B/D "MOTOROLA CMOS LOGIC DATA" BCD TO EVEN SEGMENT HTL LOGIC MC14070B MC14511B MC14XXXBCL MC14XXXBCP TTL display 7

    Untitled

    Abstract: No abstract text available
    Text: MC14513B BCD-To-Seven Segment Latch/Decoder/Driver CMOS MSI Low−Power Complementary MOS The MC14513B BCD−to−seven segment latch/decoder/driver is constructed with complementary MOS (CMOS) enhancement mode devices and NPN bipolar output drivers in a single monolithic structure.


    Original     		PDF MC14513B MC14513B MC14513B/D

    MC14070B

    Abstract: MC14511B MC14513B MC14513BCP MC14513BCPG
    Text: MC14513B BCD−To−Seven Segment Latch/Decoder/Driver CMOS MSI Low−Power Complementary MOS The MC14513B BCD−to−seven segment latch/decoder/driver is constructed with complementary MOS (CMOS) enhancement mode devices and NPN bipolar output drivers in a single monolithic structure.


    Original     		PDF MC14513B MC14513B MC14513B/D MC14070B MC14511B MC14513BCP MC14513BCPG

    MC14513B

    Abstract: MC14070B MC14511B MC14513BCP
    Text: MC14513B BCD−To−Seven Segment Latch/Decoder/Driver CMOS MSI Low−Power Complementary MOS The MC14513B BCD−to−seven segment latch/decoder/driver is constructed with complementary MOS (CMOS) enhancement mode devices and NPN bipolar output drivers in a single monolithic structure.


    Original     		PDF MC14513B MC14513B MC14513B/D MC14070B MC14511B MC14513BCP

    MC14461

    Abstract: MC14462 ion chamber
    Text: MOTOROLA MC14461 MC14462 SMOKE DETECTOR C IR C U IT The MC14461 and MC14462 are smoke detector circuits fabricated using M otorola's standard CMOS process. The MC14461 CMOS MSI has the detector inp u t w ith the standard CMOS static p rotection. The MC14462 has an unprotected CMOS {MOSFET inp u t which


    OCR Scan     		PDF MC14461 MC14462 MC14462 ion chamber

    fr9z

    Abstract: VG264260
    Text: VG264260CJ 262.144x16—Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in


    OCR Scan     		PDF VG264260CJ 144x16-- 144-word 40-pin 25/28/30/35/40ns 0s035 fr9z VG264260

    71142 a

    Abstract: No abstract text available
    Text: CD4504BMS Semiconductor CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation December 1992 Features Pinout • High Voltage Type 20V Rating CD4504BM S TOP VIEW • Independence of Power Supply Sequence Consider­ ations - VCC can Exceed VDD


    OCR Scan     		PDF CD4504BMS CD4504BM 100nA 71142 a

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED DEVICE bflE D • 4B25771 DDIMBTO MSI ■ 16K X 32 CMOS DUAL-PORT STATIC RAM MODULE DESCRIPTION FEATURES • High-density 512K CMOS Dual-Port RAM module • Fast access tim es The IDT7M1002 is a 16K x 32 high-speed CMOS Dual-Port Static RAM Module constructed on a co-fired ceramic sub­


    OCR Scan     		PDF 4B25771 IDT7M1002 IDT7M1002 IDT7006

    pin diagram of ttl 74112

    Abstract: pin diagram of 74112 ttl 74112 CI 74112 L0821 L0619 bm42
    Text: SAMSUNG ELECTRONICS INC b?E » 7 c1 b M m 2 KM684000L/KM684000L-L 00175m MSI SriGK CMOS SRAM 524,288 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 55, 70, 85, 100ns Max. • Low P ow er D issipa tion Standby (CMOS): 1(VW (Typ.) L Version


    OCR Scan     		PDF KM684000L/KM684000L-L 00175m 100ns 110mW/MHz KM684000LP/LP-L: 32-pin 600mil) KM684000LG/LG-L: 525mil) pin diagram of ttl 74112 pin diagram of 74112 ttl 74112 CI 74112 L0821 L0619 bm42

    PL22V10-10N

    Abstract: PL22V10-10A
    Text: Product specification Philips Semiconductors Programmable Logic Devices CMOS programmable electrically erasable logic device PL22V10-10 FEATURES DESCRIPTION • Advanced CMOS EEPROM technology The Philips Semiconductors PL22V10-10 is a CMOS programmable electrically erasable


    OCR Scan     		PDF PL22V10-10 110mA PL22V10-10N PL22V10-10A

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL253 CMOS Programmable Electrically Erasable Logic Device Features • ADVANCED CMOS EEPROM TECHNOLOGY ■ FPLA ARCHITECTURE ■ COMPATIBLE PERFORMANCE — tpD = 30ns max, to E = 30ns max SUPERSET REPLACEMENT FOR PLS153


    OCR Scan     		PDF PEEL253 PLS153 terms/10

    22CV10

    Abstract: No abstract text available
    Text: AMI PEEL 22CV10 Z SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 Features General Description Advanced CMOS EEPROM Technology The AMI PEEL22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance,


    OCR Scan     		PDF 22CV10 200jiA PEEL22CV10 PEEL22CVV10 480KH 22CV10CZ)

    Untitled

    Abstract: No abstract text available
    Text: CY7C340 EPLD Family CYPRESS SEMICONDUCTOR • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions • 0.8-micron double-metal CMOS EPROM technology CY7C34X • Advanced 0.65-micron CMOS technology to increase performance


    OCR Scan     		PDF CY7C340 CY7C34X) 65-micron CY7C34XB) 1076-compliant CY3340 CY7C341 CY3340F CY3342

    Untitled

    Abstract: No abstract text available
    Text: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static


    OCR Scan     		PDF EDI8L32512C S12Kx32 512Kx32 EDI8L32512C 1Mx16 EDBL325I2C

    EDI8L32512C

    Abstract: EDI8L32512C25AC
    Text: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static


    OCR Scan     		PDF EDI8L32512C 512Kx32 M0-47AE EDI8L32512C DBL32512C EDI8L32512C25AC

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL173 CMOS Programmable Electrically Erasable Logic Device Features • FPLA ARCHITECTURE ■ ADVANCED CMOS EEPROM TECHNOLOGY — — — ■ LOW POWER CONSUMPTION — 35m A + 1 .OmA/MHz max ■ COMPATIBLE PERFORMANCE


    OCR Scan     		PDF PEEL173 PLS173

    Untitled

    Abstract: No abstract text available
    Text: Product Preview INTERNATIONAlr-CMOi TECHNOLOGY INC. Ftrrrmhnrlinii I \PEEL2 CMOS Programmable Electrically EràsàtrtèT Logic Device: Features ADVANCED CMOS E2PROM TECHNOLOGY — CMOS: 25mA + .7mA/MHz Max — TTL: 35mA + .7mA/MHz Max HIGH PERFORMANCE —


    OCR Scan     		PDF PLS173 22CP210 PEEL22CP210

    Untitled

    Abstract: No abstract text available
    Text: CD4504BMS ÍH H A R R IS UU S E M I C O N D U C T O R CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation December 1992 Features • Pinout CD4504BMS TOP VIEW High Voltage Type 20V Bating • Independence of Power Supply Sequence Consider­


    OCR Scan     		PDF CD4504BMS CD4504BMS 100nA 13BTURE

    Untitled

    Abstract: No abstract text available
    Text: CD4504BMS f f l H A R R IS U U S E M I C O N D U C T O R CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation December 1992 Pinout Features CD4504BMS TOP VIEW • High Voltage Type 20V Rating • Independence of Power Supply Sequence Consider­


    OCR Scan     		PDF CD4504BMS CD4504BMS 100nA