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    SILICON TRANSISTOR CORP

    Abstract: MPSH10 datasheet CMPTH10 CP302 MPSH10 MPSH11 chip die npn transistor
    Text: PROCESS CP302 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.3 x 2.3 MILS Emitter Bonding Pad Area 2.5 x 2.3 MILS


    Original     		PDF CP302 MPSH10 MPSH11 CMPTH10 CMPTH11 SILICON TRANSISTOR CORP MPSH10 datasheet CMPTH10 CP302 MPSH10 MPSH11 chip die npn transistor

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


    Original     		PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    transistor r 53

    Abstract: MPSH10 datasheet MPSH10 mpsh10 data sheet CMPTH10 CP302 MPSH11 chip die npn transistor chip die transistor MPSH10 die
    Text: PROCESS CP302 Small Signal Transistor NPN - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.3 x 2.3 MILS Emitter Bonding Pad Area 2.5 x 2.3 MILS Top Side Metalization


    Original     		PDF CP302 MPSH10 MPSH11 CMPTH10 CMPTH11 22-March transistor r 53 MPSH10 datasheet MPSH10 mpsh10 data sheet CMPTH10 CP302 MPSH11 chip die npn transistor chip die transistor MPSH10 die