CODE TQ SMD Search Results

CODE TQ SMD Result Highlights (5)

Part	Manufacturer	Description
BLM15PX121BH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 120ohm POWRTRN
BLM15PX181SH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 180ohm POWRTRN
BLM21HE802SN1L	Murata Manufacturing Co Ltd	FB SMD 0805inch 8000ohm NONAUTO
BLM15PX330BH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 33ohm POWRTRN
BLM15PX600SH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 60ohm POWRTRN

CODE TQ SMD Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
p381 Abstract: code tq smd Text: ＳＭＤインダクタ SMD INDUCTORS OPERATING TEMP K25 V J105C f製品自己発熱含むg K25 V J105C fIncluding self-generated heatg 特長 FEATURES YSMD inductor. YIt corresponds to High current. YSimple and original magnetic shield structure. YSMDインダクタ	Original	J105C 394M0 386M0 197maxg p381 code tq smd	PDF
NR3015 Abstract: nr4018 NR4010 m20l NR3010 p382 NR3012 p362 NR4012 Text: ＳＭＤインダクタ SMD INDUCTORS OPERATING TEMP K25VJ120C f製品自己発熱含むg K25VJ120C fInducting self-generated heatg 特長 FEATURES YSmall and Low profile inductor. YIt corresponds to High current. YSimple and original magnetic shield structure.	Original	K25VJ120C NR3015 nr4018 NR4010 m20l NR3010 p382 NR3012 p362 NR4012	PDF
1n0K 63 Abstract: 2012TYPE Text: CERAMIC CHIP INDUCTORS •OPERATION TEMP. -25~+85℃ Including self-generated heat ■FEATURES ABCO chip inductor is wire wound type ceramic inductor. And our product provide high Q value. So ABCO chip inductor can be SRF(self resonant frequency)industry.	Original	2012TYPE 1608TYPE 1005TYPE05 HP4287A) 6193A HP8753D) 390nH) 1n0K 63 2012TYPE	PDF
TA0152A Abstract: No abstract text available Text: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com SAW Filter 942.5 MHz 35MHz Bw For EGSM SMD 3.0x3.0	Original	35MHz TA0152A 10sec) TA0152A	PDF
mosfet controlled thyristor Abstract: mcc 55-12 a3 diode smd diode nomenclature ixys mcc 56 smd diode a3 MCC SMD DIODE H- bridge mosfet circuit smd 3 phase rectifier bridge 3 phase rectifier scr controller Text: Product Nomenclature Diode Dice C-DWEP 69-12 Sample A3 Packing method C T W Single dice in trays, electrically tested Dice in wafers, unsawed, electrically tested, inked bad die Dice in wafers on foil, sawed, electrically tested, inked bad die Die function	Original	1-42RD mosfet controlled thyristor mcc 55-12 a3 diode smd diode nomenclature ixys mcc 56 smd diode a3 MCC SMD DIODE H- bridge mosfet circuit smd 3 phase rectifier bridge 3 phase rectifier scr controller	PDF
MT46H64M32 Abstract: MT46H128 MT46H64M32L2CG-6 MT46H128M 152-Ball lpddr MT46H128M32 micron lpddr 128M32 MT46H128M32L4KZ Text: 152-Ball x32 Mobile LPDDR only PoP (TI-OMAP) Features Mobile LPDDR (only) 152-Ball Package-on-Package (PoP) TI-OMAP MT46HxxxMxxLxCG MT46HxxxMxxLxKZ Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)	Original	152-Ball MT46HxxxMxxLxCG MT46HxxxMxxLxKZ 09005aef833913f1/Source: 09005aef833913d6 MT46H64M32 MT46H128 MT46H64M32L2CG-6 MT46H128M lpddr MT46H128M32 micron lpddr 128M32 MT46H128M32L4KZ	PDF
MT29F1G08ABCHC Abstract: mt29c MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr Text: Preliminary‡ 152-Ball NAND Flash and Mobile LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 152-Ball Package-on-Package (PoP) Combination Memory (TI OMAP ) MT29C Family Current production part numbers: See Table 1 on page 3 Features Figure 1:	Original	152-Ball MT29C 152-Ball 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29F1G08ABCHC MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr	PDF
MT29C2G24MAKLAJG-75 IT Abstract: MT29C2G24MAKLAjg JW256 Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components	Original	168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29C2G24MAKLAJG-75 IT MT29C2G24MAKLAjg JW256	PDF
MT29C1G12 Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1 Text: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package	Original	152-Ball 409ng 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29C1G12 mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1	PDF
MT29C2G24m Abstract: MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD Text: Preliminary‡ 168-Ball NAND Flash and LP-DRAM PoP TI-OMAP MCP Features NAND Flash and LP-DRAM 168-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package	Original	168-Ball 09005aef83071038/PDF: 09005aef83070ff3 168ball MT29C2G24m MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD	PDF
MT29F2G16AB Abstract: MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components	Original	168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29F2G16AB MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET	PDF
transistor smd MJ 145 Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145 Text: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter	OCR Scan	q67042-s4131 np-60 transistor smd MJ 145 d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145	PDF
smd diode code WP Abstract: diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode Text: SIEMENS BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration	OCR Scan	Q62702-A1190 OD-323 50/60Hz, smd diode code WP diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode	PDF
JJ SMD diode Abstract: diode smd marking WP smd diode marking JJ 6 pin smd diode 140KW 6402W Text: SIEMENS BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package	OCR Scan	4-02W Q62702-A1215 SCD-80 100MHz JJ SMD diode diode smd marking WP smd diode marking JJ 6 pin smd diode 140KW 6402W	PDF

R472 Abstract: 4512c U 2554 b code tq smd Text: PD-2.554 03/98 Inte rn ation al IQ R Rectifier 12CTQ.S SERIES SCHOTTKY RECTIFIER 12 Amp Major R atings and C h a racte ristics D e scrip tio n /Features C h aracteristics 1 2C TQ .S U n its lp AV Rectangular 12 A 35 to 45 V IpSM @ 1p = 5fissine 690 A	OCR Scan	12CTQ. SMD-220) SMD-220 R472 4512c U 2554 b code tq smd	PDF
S27C256 Abstract: No abstract text available Text: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC — 120 ns Access Time • EPI Processing — Latch-Up Immunity to 200 mA • Fast Programming — ESD Protection Exceeds 2000 Volts • DESC SMD No. 5962-86063	OCR Scan	WS27C256L S27C256L MIL-STD-883C WS27C256L-12DMB* WS27C256L-12TMB* WS27C256L-15DMB* WS27C256L-15TMB* S27C256	PDF
VAOL-S12WR4 Abstract: No abstract text available Text: 1206 SMD TYPE LED OPTOELECTRONICS VAOL-S12WR4 ligh ting:thew ay Features • Fit automatic placement equipment. • Fit Compatible with infrared and vapor phase reflow solder process. • Pb-free. • RoHS compliant. Descriptions • • • • • For higher packing density .	OCR Scan	VAOL-S12WR4 VAOL-S12WR4	PDF
Diode smd code BU Abstract: D1FK60 marking A.Y MZ 251 fly wheel smd diode 0.5A fast 600v TJ2A smd 2AT Text: Super Fast Recovery Diode mtmm o u t l i n e Single Diode D1FK60 U nit I mm Package I 1F Weight 0.058g Typ a v -K -7 -» ' Cathode* mark 600V 0.8A 11 r \| Feature • • • • •H Ü H Œ • trr=75ns • V f =1.3V 1 Small SMD High Voltage trr=75ns	OCR Scan	D1FK60 J532-1) Diode smd code BU D1FK60 marking A.Y MZ 251 fly wheel smd diode 0.5A fast 600v TJ2A smd 2AT	PDF
smd code p5 Abstract: draloric cr cr0805 draloric SMD 1206 RESISTOR smm0204 Text: EM UNTERNEHMEN VON DRALORIC SMD CRT. Thin Film Flat Resistor T Features • stable film structu re • tight T.C. range and close tolerances • excellent load life and climatic stability • suitable for precision electronic applications Style Style	OCR Scan	CRT0805 10R-100K 10R-100K 00Q07flb smd code p5 draloric cr cr0805 draloric SMD 1206 RESISTOR smm0204	PDF
SP*02N60 Abstract: transistor smd hq Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated V P T 0905 1 Type SPD02N60 ^DS h 600 V 2 A Pin 1 Pin 2 Pin 3 G D S f î DS on (a) VGS Package Ordering Code 5.5 Q, Vgs = 10 V P-T0252	OCR Scan	SPD02N60 SPU02N60 P-T0251 Q67040-S4133 Q67040-S4127-A2 P-T0252 135ical SP*02N60 transistor smd hq	PDF
BYT 56 diode Abstract: smd transistor marking TQ smd diode JD BYt 32 Text: SIEM EN S SPPX4N60S5 SPBX4N6QS5 Target data sheet Coot MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT05154 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPPX4N60S5 ^DS 600 V b 3.2 A %S on	OCR Scan	SPPX4N60S5 VPT05154 SPBX4N60S5 X4N60S5 P-T0220-3-1 P-T0263-3-2 SPPX4N60S5: BYT 56 diode smd transistor marking TQ smd diode JD BYt 32	PDF
transistor SMD QQ Abstract: No abstract text available Text: SPD30N03L SPU30N03L SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche rated • Logic Level • dvld t rated • 175°C operating temperature Type ^DS 30 V SPD30N03L b 30 A SPU30N03L f f DS on (5) VGS Pin 1 Pin 2 Pin 3 G D	OCR Scan	SPD30N03L SPU30N03L P-T0252 Q67040-S4148-A2 P-T0251 Q67040-S4149-A2 transistor SMD QQ	PDF
20n60s5 Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5 SPP20N60S5 Text: SIEMENS SPP20N60S5 SPB20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R q S 0 n ¡n TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme äv/ät rated • Optimized capacitances	OCR Scan	SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 20N60S5 transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5	PDF
sot-223 body marking A G Q E Abstract: TRANSISTOR SMD MARKING CODE ag Text: SIEMENS SPNX6N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best Ros{on ¡n SOT 223 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme dv/dt rated • 150°C operating temperature Type V^DS SPNX6N60S5 600 V	OCR Scan	SPNX6N60S5 X6N60S5 P-SOT223-4-1 SPNX6N60S5 sot-223 body marking A G Q E TRANSISTOR SMD MARKING CODE ag	PDF

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CODE TQ SMD Search Results

CODE TQ SMD Result Highlights (5)

CODE TQ SMD Datasheets Context Search

p381

NR3015

1n0K 63

TA0152A

mosfet controlled thyristor

MT46H64M32

MT29F1G08ABCHC

MT29C2G24MAKLAJG-75 IT

MT29C1G12

MT29C2G24m

MT29F2G16AB

transistor smd MJ 145

smd diode code WP

JJ SMD diode

R472

S27C256

VAOL-S12WR4

Diode smd code BU

smd code p5

SP*02N60

BYT 56 diode

transistor SMD QQ

20n60s5

sot-223 body marking A G Q E