MP4007
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE POWER TRANSISTOR 4 IN 1 MP4007 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 25.2 ± 0.2 LOAD SWITCHING. . Small Package by Full Molding. (SIP 10 Pin) . High Collector Power Dissipation.
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MP4007
Ta-25
MP4007
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Untitled
Abstract: No abstract text available
Text: SN5409, SN54LS09, SN54S09, SN7409, SN74LS09, SN74S09 QUADRUPLE 2-INPUT POSITIVE-AND GATES WITH OPEN-COLLECTOR OUTPUTS DECEMBER 1 9 8 3 -R E V IS E D M A R C H 1 9 8 8 Package Options Include Plastic "Sm all Outline" P ackages, Ceram ic Chip Carriers and Flat P ackages, and Plastic and Ceram ic
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SN5409,
SN54LS09,
SN54S09,
SN7409,
SN74LS09,
SN74S09
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Untitled
Abstract: No abstract text available
Text: SN54ALS05A, SN74ALS05A HEX INVERTERS WITH OPEN-COLLECTOR OUTPUTS S D A S 1 9 0 A - APRIL 1982 - R EVISED DECEMBER 1994 Package Options Include Plastic Small-Outllne D Packages, Ceramic Chip Carriers (FK), and Standard Plastic (N) and Ceramic (J) 300-mll DIPs
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SN54ALS05A,
SN74ALS05A
300-mll
SN54ALS05A
SN74ALS05A
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TA8655an
Abstract: sine wave inverter using pic sif 96 voltmeter sine wave inverter pic tcw7
Text: TOSHIBA TA8655AN TENTATIVE Unit: mm 1-CHIP NTSC COLO R T V TA8 65 5AN is an Î1TSC 1-chip IC for color TV featuring the structure of collectively incorporating PIF circuits, SIF circuits, and video/chroma deflection circuits in a compact 64-pin package. P IF C IR C U IT S
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TA8655AN
64-pin
TA8655an
sine wave inverter using pic
sif 96 voltmeter
sine wave inverter pic
tcw7
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2sc3892a
Abstract: 2Sc3892a equivalent 2SC3892 c 1173
Text: 2SC3892A SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. Unit in mm . High Voltage : VcBO ^1500V I 5 . 5 i 0.5 . 0 3 .6± 0.3 3.0 ± 0 .3 . High Speed Switching Resistive Load tf=0.2ys(Typ.) . Collector Metal is Fully Covered with Mold Resin.
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2SC3892A
1173-Y
2sc3892a
2Sc3892a equivalent
2SC3892
c 1173
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MG50G2CL3
Abstract: Mg50G2cl mg50g2
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)
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MG50G2CL3
MG50G2CL3
Mg50G2cl
mg50g2
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Untitled
Abstract: No abstract text available
Text: SN54AS760, SN74ALS760, SN74AS760 OCTAL BUFFERS AND LINE DRIVERS WITH OPEN-COLLECTOR OUTPUTS S D A S 1 4 1 A - DE CE M B E R 1983 - REVISED JA NUARY 1995 SN54AS760. . . J PACKAGE SN74ALS760, SN74AS760. . . DW OR N PACKAGE TOP VIEW • Open-Collector Outputs Drive Bus Lines or
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SN54AS760,
SN74ALS760,
SN74AS760
ALS244
AS244
300-mil
SN54AS760.
SN74AS760.
S56303
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BU326
Abstract: BU326-BU326A 331Z BU326A st bux
Text: TEXAS INSTR -COPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 t 7 26 TEXAS INSTR~<OPTO> 62C 3 6 6 2 9 D BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current
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BU326,
BU326A
BU326
BU326-BU326A
331Z
st bux
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Untitled
Abstract: No abstract text available
Text: 2SA1893 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm ST O R O B E FLASH A PPLIC A TIO N S. M E D IU M P O W E R A M P L IF IE R A PPLIC A TIO N S. = 100~320 (V c e = - 2V, l 0 = —0.5A) hFE = 70 (M in.)(V cE = —2V, I c = - 4 A ) Low Collector Saturation Voltage
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2SA1893
--35V,
--10mA,
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MG15G1AL3
Abstract: MG15G1AL3 equivalent mg15g1 mg15g MG15G1AL
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15G1AL3 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-In Free Wheeling Diode. . High DC Current Gain : hFE=100 Min. (Ic=15A)
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MG15G1AL3
MG15G1AL3
MG15G1AL3 equivalent
mg15g1
mg15g
MG15G1AL
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Untitled
Abstract: No abstract text available
Text: SN54LS15, SN54S15, SN74LS15, SN74S15 TRIPLE 3 INPUT POSITIVE AND GATES WITH OPEN-COLLECTOR OUTPUTS A P R IL 1 9 8 5 — R E V IS E D M A R C H Package Options Include Plastic "Sm all Outline" Packages, Ceramic Chip Carriers and Flat Packages, and Plastic and Ceramic
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SN54LS15,
SN54S15,
SN74LS15,
SN74S15
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2SD1433
Abstract: No abstract text available
Text: 2SD1433 SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES: . High Voltage : V^go=1500V . Low Saturation Voltage : vCE sat =5V (Max.) (IC=6A, Ib =1.2A) . High Speed : tf=1.0/js (Max.) . Glass Passivated Collector-Base Junction
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2SD1433
2SD1433
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MG400H1FK1
Abstract: LF400A
Text: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage
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MG400H1FK1
TjSl85'
MG400H1FK1
LF400A
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74AS763
Abstract: No abstract text available
Text: TYPES SN54AS762, SN54AS763, SN74AS762, SN74AS763 OCTAL BUFFERS AND LINE DRIVERS WITH OPEN COLLECTOR OUTPUTS DE C EM B ER 1 9 8 3 Included A m ong the Package Options Are 20-Pin D IPs and Both Plastic and Ceramic Chip Carriers S N 5 4 A S ' . . . J P A C KA G E
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SN54AS762,
SN54AS763,
SN74AS762,
SN74AS763
20-Pin
SN54AS762
SN74AS762
54AS7
74AS763
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Untitled
Abstract: No abstract text available
Text: 2SB1018 SILICON PNP EPITAXIAL PLANAR TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. PO W ER AMPLIFIER APPLICATIONS. • • • High Collector Current : I q = —7A Low Collector Saturation Voltage : v CE sat = -0.5V (M ax.) at Ic = -4 A
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2SB1018
2SD1411
2-10L1A
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2N5551
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage
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2N5551
100MHz
2N5551
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MG150H2CL1
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FAST—ON—TAB #110 MS w.s±a5 FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes. . High DC Current Gain : hpjr=80 Min. (Ic=150A)
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MG150H2CL1
MG150H2CL1
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ic 109b
Abstract: MG100M2YK1 Di 762 transistor transistor B 764
Text: MG100M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 6-FAST-ON-TAB t 110 JAPAN 3-M5 FEATURES: 4 -065±C13 . The Collector is Isolated from Case. to . 2 Power Transistors and 2 Free Wheeling
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MG100M2YK1
-109B
ic 109b
MG100M2YK1
Di 762 transistor
transistor B 764
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MG25N6EK1
Abstract: ij98
Text: MG25N6EK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolation from Case. Unit in mm 13.5 13.5 . 6 Power Transistors and 6 Free Wheeling Tolerance is ± Q 5 m m unless Diodes are Built Into 1 Package.
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MG25N6EK1
MG25N6EK1
ij98
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T1P121
Abstract: texas instruments tip122 texas instruments tip127 TIP121 TIP121 TEXAS T1P122
Text: TYPES TIP120, TIP121. TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D ESIGN ED FOR COM PLEM EN TARY USE WITH TIP125, TIP126, TIP127 65 W at 25°C Case Temperature • Min hpE ° f 1000 at 3 V , 3 A • 5 A Rated Collector Current • 50 mJ Reverse Energy Rating
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TIP120,
TIP121.
TIP122
TIP125,
TIP126,
TIP127
TIP121,
TIP120
T1P121
texas instruments tip122
texas instruments tip127
TIP121
TIP121 TEXAS
T1P122
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2N5885
Abstract: 2N 5883 2n 5886
Text: TYPES 2N5885, 2N5886 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D ESIG NED FOR C O M P L E M E N T A R Y USE W ITH 2N 5883, 2N 5884 • 200 Watts at 25°C Case Temperature • 25-A Rated Continuous Collector Current
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2N5885,
2N5886
90-mJ
2N5885
2N5885
2N 5883
2n 5886
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MG400H1UL1
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hpE=80 Min. (Ic =400A) . Low Saturation Voltage
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MG400H1UL1
MG400H1UL1
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2SC2562
Abstract: 2SC2562 Toshiba
Text: 2SC2562 SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in m m HIGH CURRENT SW IT C H IN G APPLICATIONS. • • • Low Collector Saturation Voltage : v CE(sat) = °-4V (Max.) (at Ic= 3A ) High Speed Switching Time : tgtg=1.0,us (Typ.)
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2SC2562
2SA1012.
O-220AB
SC-46
2-10A1A
2SC2562
2SC2562 Toshiba
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2SC4202
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC4202 V I DEO O U TPUT FOR SUPER HIGH RESOLUTION DISPLAY. Unit in mm HIGH S P E E D S WIT CHING APPLICATIONS. 10.3M A X ., ^ 3 - 6 ± 0 . 2 . H i g h T r ansition Freq u e n c y : f x = l .l G H z T y p . . L o w Collector Output Capacitance.
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2SC4202
2SC4202
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