MPSH24
Abstract: MMBTH24 MPSH11
Text: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator
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MPSH24/MMBTH24
100mA
300MHz,
MPSH11
OT-23
MPSH24
MMBTH24
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MMBTH24
Abstract: MPSH11 MPSH24
Text: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator
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MPSH24/MMBTH24
100mA
300MHz,
MPSH11
OT-23
MMBTH24
MPSH24
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MPSH34
Abstract: MPSH11
Text: MPSH34 MPSH34 NPN General Purpose Amplifier • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET
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MPSH34
100mA
300MHz,
MPSH11
MPSH34
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MMBTH34
Abstract: MPSH11
Text: MMBTH34 MMBTH34 NPN General Purpose Amplifier • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.
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MMBTH34
100mA
300MHz,
MPSH11
OT-23
MMBTH34
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BFY88
Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration
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i200Rb
D0DS332
ft-11
569-GS
000s154
hal66
if-11
BFY88
Telefunken u 237
transistor marking code 2C
BFY 88
telefunken C80
ui77
silicon npn planar rf transistor sot 143
IMB 06 C
BFY 52 transistor
95288
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NF4-5V
Abstract: capacitor feed-through ERIE ceramic capacitor
Text: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCEDATA . input matching cell allows an easier design of circuits Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier.
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OT437A
AT-3-7-271SL
PLB16012U
NF4-5V
capacitor feed-through
ERIE ceramic capacitor
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EUROFARAD capacitor
Abstract: EUROFARAD cec EUROFARAD MTB10010U SC15 Pulse Capacitor Eurofarad
Text: Philips Semiconductors Product specification NPN microwave power transistor MTB10010U FEATURES QUICK REFERENCE DATA • Input prematching cell allows an easier design of circuits Microwave performance for Tmb = 25 °C in a common base class C narrowband amplifier.
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MTB10010U
OT440A
MTB1001
OT440A.
EUROFARAD capacitor
EUROFARAD cec
EUROFARAD
MTB10010U
SC15
Pulse Capacitor Eurofarad
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EUROFARAD capacitor
Abstract: erie 1250-003 EUROFARAD cec EUROFARAD ceramic capacitor
Text: Philips Semiconductors Product specification NPN microwave power transistor MTB10010U FEATURES QUICK REFERENCE DATA • Input prematching cell allows an easier design of circuits Microwave performance for Tmb = 25 °C in a common base class C narrowband amplifier.
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MTB10010U
EUROFARAD capacitor
erie 1250-003
EUROFARAD cec
EUROFARAD ceramic capacitor
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Epsilam-10
Abstract: epsilam 10
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed for 24 Volt UHF large-signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 850-960 MHz. • Motorola Advanced Amplifier Concept Package
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MRF898
Epsilam-10
epsilam 10
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C1995
Abstract: national semiconductor marking RRD-B30M115 IE A150 MMBTH34 ICE20 IC Marking M03 8548
Text: MMBTH34 Surface Mount NPN RF-IF Amp General Description This device was designed for common-emitter low noise amplifier and mixer applications in the 100 mA to 15 mA range to 300 MHz and low frequency drift common-base VHF oscillator applications with high output levels for driving
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MMBTH34
MMBTH34-3K
C1995
national semiconductor marking
RRD-B30M115
IE A150
ICE20
IC Marking M03
8548
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Untitled
Abstract: No abstract text available
Text: October 1985 MMBTH34 Surface Mount NPN RF-IF Amp General Description This device was designed for common-emitter low noise amplifier and mixer applications in the 100 p-A to 15 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving
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MMBTH34
MMBTH34-3K
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philips capacitor 470
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y FEATURES QUICK REFERENCE DATA • Interdigitated structure provides high emitter efficiency Microwave performance up to T mb = 25 °C in a common base class C broadband amplifier.
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MZ0912B50Y
01KP50X
philips capacitor 470
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transistor 1BT
Abstract: transistor 1BT 86 1bt npn common base amplifier circuit designing npn 1bt 1bt transistor
Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES R02731B50W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium
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R02731B50W
transistor 1BT
transistor 1BT 86
1bt npn
common base amplifier circuit designing
npn 1bt
1bt transistor
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STT 433
Abstract: variable capacitor erie ceramic RX1214B170W Tekelec
Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium
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RX1214B170W
FO-91B.
71106Eb
STT 433
variable capacitor
erie ceramic
RX1214B170W
Tekelec
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ic nn 5198 k
Abstract: nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100
Text: I MMBTH11 Discrete P O W ER & S ig n a l Technologies National MPSH11 Semiconductor'“ MPSH11 NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 fiA to 10 mA range to 300 MHz, and low frequency drift common-base
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MPSH11
MMBTH11
b5D1130
ic nn 5198 k
nn 5198 k
Transistor C 5196
fcm 10.7 mhz
transistor s34
ic nn 5198 r
Transistor C 5198
MMBTH11
MPSH11
Q100
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MRF1375
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1375/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1375 Designed for 1025 –1150 MHz pulse common base amplifier applications such as TACAN and DME. • Guaranteed Performance @ 1090 MHz
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MRF1375/D
MRF1375
MRF1375/D*
MRF1375
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MRF10500
Abstract: motorola K 626 J189 500 watts amplifier MRF10501 0395 ADC
Text: MOTOROLA Order this document by MRF10500/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF10500 MRF10501 . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters.
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MRF10500/D
MRF10500
MRF10501
MRF10500
MRF10500/D*
motorola K 626
J189
500 watts amplifier
MRF10501
0395 ADC
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2SC3611
Abstract: No abstract text available
Text: Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 3.8±0.3 • High transition frequency fT • Small collector output capacitance Common base, input open circuited Cob • Wide current range
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2SC3611
O-126B
2SC3611
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motorola J122
Abstract: MOTOROLA transistor 413 transistor j380 51 MRF10350
Text: MOTOROLA Order this document by MRF10350/D SEMICONDUCTOR TECHNICAL DATA Microwave Pulse Power Transistor MRF10350 Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz
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MRF10350/D
MRF10350
MRF10350/D*
MRF10350/D
motorola J122
MOTOROLA transistor 413
transistor j380 51
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motorola rf Power Transistor
Abstract: Motorola Microwave power Transistor 376B MRF10150 MRF10500 TACAN 41 Motorola 406
Text: MOTOROLA Order this document by MRF10150/D SEMICONDUCTOR TECHNICAL DATA Microwave Pulse Power Transistor MRF10150 . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz
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MRF10150/D
MRF10150
MRF10150/D*
motorola rf Power Transistor
Motorola Microwave power Transistor
376B
MRF10150
MRF10500
TACAN 41
Motorola 406
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MRF1015MB
Abstract: 1090
Text: MOTOROLA Order this document by MRF1015MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1015MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.
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MRF1015MB/D
MRF1015MB
MRF1015MB
1090
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor Designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak
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MRF10500
MRF10350
MRF10070
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MRF1004MB
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1004MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1004MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.
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MRF1004MB/D
MRF1004MB
MRF1004MB
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1004MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1004MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.
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MRF1004MB/D
MRF1004MB
MRF1004MB
32A-03
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