COMMON EMITTER BJT Search Results

COMMON EMITTER BJT Result Highlights (5)

Part	Manufacturer	Description
SSM10N961L	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501
MC1235F	Rochester Electronics LLC	MC1235 - Gate, ECL, CDFP14
100324FM/B	Rochester Electronics	100324 - TTL to ECL Translator, 6 Func, Inverted Output, ECL
MC1218L	Rochester Electronics LLC	MC1218 - ECL to TTL Translator, ECL, CDIP14
100183FC	Rochester Electronics LLC	Multiplier, 100K Series, 8-Bit, ECL, CQFP24, CERPAK-24

COMMON EMITTER BJT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
HP35821E Abstract: BJT TRANSISTOR BJT IC Vce HP35821 common emitter bjt hp358 Text: HP35821E NPN SILICON BJT TRANSISTOR PACKAGE STYLE .200 4L PILL DESCRIPTION: The ASI HP35821E is a Common Emitter Device Designed for Medium Power Class C Applications Operating at VHF,UHF Frequencies. MAXIMUM RATINGS IC 35 mA IC 180 mA MAX VCEO 20 V VCBO	Original	HP35821E HP35821E BJT TRANSISTOR BJT IC Vce HP35821 common emitter bjt hp358	PDF
START499D Abstract: No abstract text available Text: START499D NPN RF silicon transistor Features • High efficiency ■ Common emitter configuration ■ Broadband performances POUT = 29 dBm with 14 dB gain @ 900 MHz ■ Plastic package ■ Linear and non linear operation ■ Supplied in tape and reel ■ In compliance with the 2002/95/EC european	Original	START499D 2002/95/EC OT-89 START499D OT-89	PDF
STMicroelectronics marking code date sot-89 Abstract: 3214W-1-103E D499 GRM1885C1H101JA01 START499D murata REEL label ferrite chip j353 transistor Text: START499D NPN RF silicon transistor Features • High efficiency ■ Common emitter configuration ■ Broadband performances POUT = 29 dBm with 14 dB gain @ 900 MHz ■ Plastic package ■ Linear and non linear operation ■ Supplied in tape and reel ■ In compliance with the 2002/95/EC european	Original	START499D 2002/95/EC OT-89 START499D OT-89 STMicroelectronics marking code date sot-89 3214W-1-103E D499 GRM1885C1H101JA01 murata REEL label ferrite chip j353 transistor	PDF
j353 Abstract: D499 J062 STMicroelectronics marking code date sot-89 GRM1885C1H6R8CZ01 GRM188R71H105KA01 TRANSISTORS BJT list 3214W-1-103E GRM1885C1H101JA01 START499D Text: START499D NPN RF silicon transistor Features • High efficiency ■ Common emitter configuration ■ Broadband performances POUT = 29 dBm with 14 dB gain @ 900 MHz ■ Plastic package ■ Linear and non linear operation ■ Supplied in tape and reel ■ In compliance with the 2002/95/EC european	Original	START499D 2002/95/EC OT-89 START499D OT-89 j353 D499 J062 STMicroelectronics marking code date sot-89 GRM1885C1H6R8CZ01 GRM188R71H105KA01 TRANSISTORS BJT list 3214W-1-103E GRM1885C1H101JA01	PDF
SIT Static Induction Transistor Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are	Original	AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier	PDF
bjt specifications Abstract: TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor Text: Power BJT Specification for RDFC Applications Application Note AN-2276 RDFC Circuit Description ABSTRACT This application note provides key parametric requirements of power BJTs suitable for Resonant Discontinuous Forward Converter RDFC applications. As the main power switch, the BJT	Original	AN-2276 AN-2276-0904 07-Apr-2009 bjt specifications TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor	PDF
IGBT/MOSFET Gate Drive Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging Text: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it	Original	20-May-09 IGBT/MOSFET Gate Drive IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging	PDF
BLY93a Abstract: No abstract text available Text: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. P a r t Number: BLY93A DescrIption: BJTs , Si NPN Power HP" The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR	Original	BLY93A 30Vdc. 175MHzl BLY93a	PDF
fairchild power bjt Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor Text: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver	Original	FJP2160D fairchild power bjt fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor	PDF
Untitled Abstract: No abstract text available Text: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBCTM configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition	Original	FJP2160D FJP2160D	PDF
Untitled Abstract: No abstract text available Text: FJP2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when	Original	FJP2145 FDC655 FJP2145	PDF
c 945 TRANSISTOR equivalent Abstract: FDC655 fairchild power bjt ignition drivers Text: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,	Original	FJBE2150D FDC655 c 945 TRANSISTOR equivalent fairchild power bjt ignition drivers	PDF
POWER BJTs Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time Text: MOTOROLA Order this document by AN1540/D SEMICONDUCTOR APPLICATION NOTE AN1540 Application Considerations Using Insulated Gate Bipolar Transistors IGBTs Prepared by: C.S. Mitter Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor	Original	AN1540/D AN1540 AN1540/D* POWER BJTs AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time	PDF
HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design Abstract: No abstract text available Text: RMO1D-1 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design Tzung-Yin Lee and Yuh-Yue Chen Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents a methodology to characterize and model BJT’s mismatch behavior for RFIC	Original	40PA/Pm2 200PA/Pm2 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design	PDF

Untitled Abstract: No abstract text available Text: FJPF2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJPF2145 is a low-cost, high-performance power switch designed to provide the best performance when	Original	FJPF2145 FDC655 FJPF2145	PDF
Application Note 41 Abstract: phototransistor spice model 2N3904 npn bjt transistor power BJT PNP spice model bjt ce amplifier application 2n3904 npn transistor optocoupler spice model photo coupler application note 2N3904 TRANSISTOR using darlington amplifier common emitter bjt Text: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note 41 Faster Switching from Standard Couplers Optocouplers offer tremendous advantages in minimizing EMI and noise susceptibility. It is not an exaggeration to say that a healthy sprinkling of opto-isolation has often meant	Original	16-Mar-12 Application Note 41 phototransistor spice model 2N3904 npn bjt transistor power BJT PNP spice model bjt ce amplifier application 2n3904 npn transistor optocoupler spice model photo coupler application note 2N3904 TRANSISTOR using darlington amplifier common emitter bjt	PDF
phototransistor spice model Abstract: optocoupler, spice model, resistor pnp phototransistor BJT 2n3904 bjt ce amplifier application optocoupler spice model power BJT PNP spice model 2N3904 TRANSISTOR using darlington amplifier optocoupler basics optocoupler spice Text: Application Notes Vishay Semiconductors "Faster Switching" from "Standard Couplers" Optocouplers offer tremendous advantages in minimizing EMI and noise susceptibility. It is not an exaggeration to say that a healthy sprinkling of opto-isolation has often meant the	Original	11-Feb-08 phototransistor spice model optocoupler, spice model, resistor pnp phototransistor BJT 2n3904 bjt ce amplifier application optocoupler spice model power BJT PNP spice model 2N3904 TRANSISTOR using darlington amplifier optocoupler basics optocoupler spice	PDF
"CHAPTER 1 Introduction to Power Semiconductors" Abstract: CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt Text: BJT Primary Switch Ratings In RDFC Applications Application Note AN-2337 When the transistor is off and a high collector voltage is applied, the electric field between base and collector causes depletion of this N- region and turns it into an insulator. The voltage	Original	AN-2337 DS-1423) AN-2497) AN-2337-0904 07-Apr-2009 "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt	PDF
w06 transistor Abstract: Transistor W06 W04 transistor w04 transistor sot 23 w02 transistor sot 71 transistor sot w04 HBFP-0420 W04 sot 23 W02 sot 23 W02 transistor Text: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Avago Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT-343 surface	Original	HBFP-0405 HBFP-0420 HBFP-0420 SC-70 OT-343) HBFP0420 w06 transistor Transistor W06 W04 transistor w04 transistor sot 23 w02 transistor sot 71 transistor sot w04 W04 sot 23 W02 sot 23 W02 transistor	PDF
HBPF-0420 Abstract: SOT343 C5 W04 transistor Transistor W06 transistor w04 Text: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420	Original	HBFP-0405 HBFP-0420 SC-70 OT343) HBPF-0420 SOT343 C5 W04 transistor Transistor W06 transistor w04	PDF
0805CS-080XMBC Abstract: HBFP-0405 HBFP0420 HBFP-0420 common emitter amplifier circuit designing HBFP-04XX-2 Text: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Agilent Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420	Original	HBFP-0405 HBFP-0420 HBFP-0420 SC-70 OT343) 0805CS-080XMBC HBFP0420 common emitter amplifier circuit designing HBFP-04XX-2	PDF
PTH hole diameter vs lead resistor Abstract: common emitter amplifier circuit designing W105 0805CS-080XMBC HBFP-0405 HBFP0420 HBFP-0420 HBPF-0405 common base amplifier circuit designing Text: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Avago Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT-343 surface	Original	HBFP-0405 HBFP-0420 HBFP-0420 SC-70 OT-343) HBFP0420 PTH hole diameter vs lead resistor common emitter amplifier circuit designing W105 0805CS-080XMBC HBPF-0405 common base amplifier circuit designing	PDF
P-Channel IGBT Abstract: PTIGBT 600V 10A RUF resistor calculation of IGBT snubber mosfet 8A 900V TO-220 thyristor 5a 600v cross reference Drive Base BJT N-Channel jfet 100V depletion vtom Trench MOSFET Termination Structure Text: Application Note 9016 February, 2001 IGBT Basics 1 by K.S. Oh CONTENTS 1. Introduction. 2. Device structure and operation .	Original		PDF
smd transistor A11b Abstract: smd diode code 1B2 transistor book transistor ic equivalent book Text: GaAs Components Infineon •aîfinülogies Technical Information 3 Technical Information 3.1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to integrated circuits, multiples of these components and semiconductor chips.	OCR Scan		PDF

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COMMON EMITTER BJT Search Results

COMMON EMITTER BJT Result Highlights (5)

COMMON EMITTER BJT Datasheets Context Search

HP35821E

START499D

STMicroelectronics marking code date sot-89

j353

SIT Static Induction Transistor

bjt specifications

IGBT/MOSFET Gate Drive

BLY93a

fairchild power bjt

Untitled

Untitled

c 945 TRANSISTOR equivalent

POWER BJTs

HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design

Untitled

Application Note 41

phototransistor spice model

"CHAPTER 1 Introduction to Power Semiconductors"

w06 transistor

HBPF-0420

0805CS-080XMBC

PTH hole diameter vs lead resistor

P-Channel IGBT

smd transistor A11b