COMPLEMENTARY MMBT3906 Search Results

COMPLEMENTARY MMBT3906 Result Highlights (5)

Part	Manufacturer	Description
ML4875CS-T	Rochester Electronics LLC	Switching Regulator, Voltage-mode, 1.5A, BICMOS, PDSO8, SOIC-8
ML4875CS-3	Rochester Electronics LLC	Switching Regulator, Voltage-mode, 1.5A, BICMOS, PDSO8, SOIC-8
CA3160T	Rochester Electronics LLC	Operational Amplifier, 1 Func, 15000uV Offset-Max, BICMOS, MBCY8, PACKAGE-8
CA3160AE	Rochester Electronics	Operational Amplifier, 1 Func, 5000uV Offset-Max, BICMOS, PDIP8, PACKAGE-8
MM74C74M	Rochester Electronics LLC	74C74 - D Flip-Flop, CMOS Series, 2-Func, Positive Edge Triggered, 1-Bit, Complementary Output, CMOS, PDSO14

COMPLEMENTARY MMBT3906 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mmbt3904lti Abstract: No abstract text available Text: RECTRON SEMICONDUCTOR MMBT3906LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904LTI is Recommended * Epitaxial planar die construction SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic	Original	MMBT3906LT1 OT-23 MMBT3904LTI OT-23 MIL-STD-202E 125OC -55OC	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION  FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906  ORDERING INFORMATION Ordering Number	Original	MMBT3904 350mW MMBT3906 MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904G-AN3-R OT-23 OT-323 OT-523 QW-R206-012	PDF
MMBT3904G-AE3-R Abstract: MMBT3904G-AL3-R MMBT3904L-AE3-R MMBT3904 MMBT3904-AE3-R MMBT3904-AL3-R MMBT3904G MMBT3904L MMBT3904L-AL3-R MMBT3906 Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 Lead-free: MMBT3904L Halogen-free: MMBT3904G	Original	MMBT3904 350mW MMBT3906 MMBT3904L MMBT3904G MMBT3904-AE3-R MMBT3904-AL3-R MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3904G-AE3-R MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904L-AE3-R MMBT3904 MMBT3904-AE3-R MMBT3904-AL3-R MMBT3904G MMBT3904L MMBT3904L-AL3-R MMBT3906	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 ORDERING INFORMATION Ordering Number Normal	Original	MMBT3906 350mW MMBT3904 OT-23 OT-323 MMBT3906-AE3-R MMBT3906L-AE3-R MMBT3906G-AE3-R MMBT3906-AL3-R MMBT3906L-AL3-R	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES  * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904  ORDERING INFORMATION Ordering Number Note:	Original	MMBT3906 350mW MMBT3904 MMBT3906G-AE3-R MMBT3906G-AL3-R MMBT3906G-AN3-R OT-23 OT-323 OT-523 QW-R206-013	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 ORDERING INFORMATION Ordering Number	Original	MMBT3904 350mW MMBT3906 MMBT3904L-AE3-R MMBT3904G-AE3-R MMBT3904L-AL3-R MMBT3904G-AL3-R MMBT3904L-AN3-R MMBT3904G-AN3-R OT-23	PDF
Untitled Abstract: No abstract text available Text: MMBT3906 PNP Silicon Elektronische Bauelemente General Purpose Transistor A suffix of "-C" specifies halogen & lead-free ●FEATURES . RoHS Compliant Product . Epitaxial Planar Die Construction . Complementary NPN Type Available A COLLECTOR MMBT3904 L 3	Original	MMBT3906 MMBT3904) 01-Jun-2002	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 ORDERING INFORMATION Ordering Number	Original	MMBT3904 350mW MMBT3906 MMBT3904L-AE3-R MMBT3904G-AE3-R MMBT3904L-AL3-R MMBT3904G-AL3-R OT-23 OT-323 QW-R206-012	PDF
MMBT3906G-AE3-R Abstract: VCE30V MMBT3904 MMBT3906 MMBT3906-AE3-R MMBT3906-AL3-R MMBT3906G MMBT3906L MMBT3906L-AE3-R marking 2A Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 Lead-free: MMBT3906L Halogen-free: MMBT3906G	Original	MMBT3906 350mW MMBT3904 MMBT3906L MMBT3906G MMBT3906-AE3-R MMBT3906L-AE3-R MMBT3906G-AE3-R MMBT3906-AL3-R MMBT3906L-AL3-R MMBT3906G-AE3-R VCE30V MMBT3904 MMBT3906 MMBT3906G MMBT3906L marking 2A	PDF
MMBT3904-AE3-R Abstract: MMBT3904G MMBT3904 MMBT3904-AL3-R MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904L MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3906 Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 Lead-free: MMBT3904L Halogen-free: MMBT3904G	Original	MMBT3904 350mW MMBT3906 MMBT3904L MMBT3904G MMBT3904-AE3-R MMBT3904L-AE3-R MMBT3904G-AE3-R MMBT3904-AL3-R MMBT3904L-AL3-R MMBT3904G MMBT3904 MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904L MMBT3906	PDF
MMBT3906 UTC Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 ORDERING INFORMATION Ordering Number Lead Free	Original	MMBT3906 350mW MMBT3904 MMBT3906L-AE3-R MMBT3906G-AE3-R MMBT3906L-AL3-R MMBT3906G-AL3-R MMBT3906L-AN3-R MMBT3906G-AN3-R OT-23 MMBT3906 UTC	PDF
mmbt3904 complementary Abstract: MMBT3904-AE3-R MMBT3904 MMBT3904-AL3-R MMBT3904L MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3906 Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 *Pb-free plating product number: MMBT3904L	Original	MMBT3904 350mW MMBT3906 MMBT3904L MMBT3904-AE3-R MMBT3904L-AE3-R MMBT3904-AL3-R MMBT3904L-AL3-R OT-23 OT-323 mmbt3904 complementary MMBT3904-AE3-R MMBT3904 MMBT3904-AL3-R MMBT3904L MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3906	PDF
Untitled Abstract: No abstract text available Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter	Original	OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA 100MHz -10mA	PDF
MMBT3906FW Abstract: 1N916 SOT-523 MARKING QA Text: MMBT3906FW PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES • · · SOT-523 Epitaxial Planar Die Construction A Complementary NPN Type Available MMBT3904FW L Ideal for Medium Power Amplification and Switching	Original	MMBT3906FW OT-523 MMBT3904FW) 01-Jun-2002 MMBT3906FW 1N916 SOT-523 MARKING QA	PDF

1N916 Abstract: MMBT3904 MMBT3906 Text: General Purpose Transistor PNP COMCHIP www.comchiptech.com MMBT3906 PNP Silicon Type Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904) Ideal for Medium Power Amplification and Switching SOT-23 .119 (3.0) .110 (2.8) .020 (0.5)	Original	MMBT3906 MMBT3904) OT-23 MDS0306002A 1N916 MMBT3904 MMBT3906	PDF
MMBT3904FW Abstract: 1N916 Text: MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES • · · SOT-523 A Epitaxial Planar Die Construction L Complementary PNP Type Available MMBT3906FW Ideal for Medium Power Amplification and Switching	Original	MMBT3904FW OT-523 MMBT3906FW) 01-Jun-2002 MMBT3904FW 1N916	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR NPN FEATURES  Complementary to MMBT3906T  Small Package SOT–523 MARKING:1N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-523 MMBT3904T MMBT3906T 100MHz	PDF
MMBT3904LT1 Abstract: MMBT3906LT1 MMBT3906LT1 semtech Text: MMBT3906LT1 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904LT1 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta=25 oC Symbol Value Unit Collector Base Voltage	Original	MMBT3906LT1 MMBT3904LT1 OT-23 100mA MMBT3906LT1 MMBT3906LT1 semtech	PDF
MMBT3904LT1 Abstract: MMBT3906LT1 Text: MMBT3906LT1 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904LT1 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta=25 oC Symbol Value Unit Collector Base Voltage	Original	MMBT3906LT1 MMBT3904LT1 OT-23 100mA MMBT3906LT1	PDF
1AM marking transistor Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE	Original	OT-23 MMBT3904 OT-23 MMBT3906 100mA 100MHz 1AM marking transistor	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE	Original	OT-23 MMBT3904 MMBT3906 100mA 100MHz 10mAdc	PDF
Untitled Abstract: No abstract text available Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES ● As complementary type, the NPN transistor MMBT3904LT1 is Recommended ● Epitaxial planar die construction MAXIMUM RATINGS* TA=25 unless otherwise noted	Original	OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA MMBT3906LT1 100MHz -10mA,	PDF
MMBT3906 Abstract: MMBT3906 SOT-23 MMBT3906-2A MMBT3906 2A MMBT3904 2A sot-23 MMBT3906 galaxy mmbt3906 2a sot-23 Text: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN type available MMBT3906 Pb Lead-free MMBT3904 . z Low Current (Max:-100mA). z Low Voltage(Max:-40v). APPLICATIONS	Original	MMBT3906 MMBT3904) -100mA) OT-23 BL/SSSTC062 MMBT3906 MMBT3906 SOT-23 MMBT3906-2A MMBT3906 2A MMBT3904 2A sot-23 MMBT3906 galaxy mmbt3906 2a sot-23	PDF
1am3 Abstract: transistor 1am3 k1n r1 K1N TRANSISTOR sot-23 marking 1AM3 mmbt3904 complementary MMBT3906 L R1A SURFACE MOUNT TRANSISTOR MMBT3904 MMBT3906 Text: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 -H : h ~ A TO P VIEW Mechanical Data_ • •	OCR Scan	MMBT3904 MMBT3906) OT-23, MIL-STD-202, MMBT3904 100MHz 100nA, 300ns, DS30036 1am3 transistor 1am3 k1n r1 K1N TRANSISTOR sot-23 marking 1AM3 mmbt3904 complementary MMBT3906 L R1A SURFACE MOUNT TRANSISTOR MMBT3906	PDF

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COMPLEMENTARY MMBT3906 Search Results

COMPLEMENTARY MMBT3906 Result Highlights (5)

COMPLEMENTARY MMBT3906 Datasheets Context Search

mmbt3904lti

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MMBT3904G-AE3-R

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MMBT3906G-AE3-R

MMBT3904-AE3-R

MMBT3906 UTC

mmbt3904 complementary

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MMBT3906FW

1N916

MMBT3904FW

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MMBT3904LT1

MMBT3904LT1

1AM marking transistor

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MMBT3906

1am3