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    COMPLEMENTARY MOSFET HALF BRIDGE Search Results

    COMPLEMENTARY MOSFET HALF BRIDGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    COMPLEMENTARY MOSFET HALF BRIDGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Complementary MOSFET Half Bridge

    Abstract: NDS8852H
    Text: N February 1996 NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially


    Original     		NDS8852H NDS8852H Complementary MOSFET Half Bridge PDF

    Untitled

    Abstract: No abstract text available
    Text: July 1996 NDS8858H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide


    Original     		NDS8858H PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS4501H FDS9953A L86Z
    Text: FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDS4501H CBVK741B019 F011 F63TNR F852 FDS4501H FDS9953A L86Z PDF

    NDS8858H

    Abstract: No abstract text available
    Text: N July 1996 NDS8858H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide


    Original     		NDS8858H NDS8858H PDF

    NDS8839H

    Abstract: Complementary MOSFET Half Bridge
    Text: March 1996 NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide


    Original     		NDS8839H NDS8839H Complementary MOSFET Half Bridge PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 L86Z NDS8858H
    Text: July 1996 NDS8858H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide


    Original     		NDS8858H CBVK741B019 F011 F63TNR F852 L86Z NDS8858H PDF

    NDS8852H

    Abstract: No abstract text available
    Text: February 1996 NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide


    Original     		NDS8852H NDS8852H PDF

    FDS4501H

    Abstract: fds4501 diode rj 93
    Text: FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDS4501H FDS4501H fds4501 diode rj 93 PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 L86Z NDS8839H
    Text: March 1996 NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide


    Original     		NDS8839H CBVK741B019 F011 F63TNR F852 L86Z NDS8839H PDF

    NDS8858H

    Abstract: Complementary MOSFET Half Bridge
    Text: July 1996 NDS8858H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide


    Original     		NDS8858H NDS8858H Complementary MOSFET Half Bridge PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDS4501H PDF

    FDS4501H

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDS4501H FDS4501H CBVK741B019 F011 F63TNR F852 FDS9953A L86Z PDF

    NDS8839H

    Abstract: Complementary MOSFET Half Bridge
    Text: N March 1996 NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide


    Original     		NDS8839H NDS8839H Complementary MOSFET Half Bridge PDF

    fds4501

    Abstract: No abstract text available
    Text: FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDS4501H fds4501 PDF

    NDS8852H

    Abstract: F011 F63TNR F852 L86Z
    Text: February 1996 NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide


    Original     		NDS8852H NDS8852H F011 F63TNR F852 L86Z PDF

    Untitled

    Abstract: No abstract text available
    Text: National February 1996 Semiconductor" NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DM O S technology. This very high density process is especially tailored to


    OCR Scan     		NDS8852H PDF

    Untitled

    Abstract: No abstract text available
    Text: e Nationa l Semiconductor March 1996 " NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to


    OCR Scan     		NDS8839H 045fl PDF

    Untitled

    Abstract: No abstract text available
    Text: July 1996 N NDS8858H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide


    OCR Scan     		NDS8858H NDS8858H 193tQ PDF

    RF-0420045D

    Abstract: No abstract text available
    Text: March 1996 N NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide


    OCR Scan     		NDS8839H NDS8839H 193tQ RF-0420045D PDF

    NDS8839H

    Abstract: Complementary MOSFET Half Bridge
    Text: M arc h 1 9 9 6 National Semiconductor ~ NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to


    OCR Scan     		NDS8839H bS0113D NDS8839H Complementary MOSFET Half Bridge PDF

    Complementary MOSFET Half Bridge

    Abstract: NDS8858H
    Text: J u ly 1 9 9 6 N NDS8858H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide


    OCR Scan     		NDS8858H NDS8858H 0D33347 Complementary MOSFET Half Bridge PDF

    Complementary MOSFET Half Bridge

    Abstract: No abstract text available
    Text: F A IR C H IL D iM IC D N D U C TQ R Ju|y1996 tm NDS8858H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		y1996 NDS8858H S8858H Complementary MOSFET Half Bridge PDF

    NDS8852H

    Abstract: Complementary MOSFET Half Bridge
    Text: P A I R C H February 1996 I I - D iM I C D N D U C T Q R tm NDS8852H Complementary MOSFET Half Bridge Features General Description These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		NDS8852H Complementary MOSFET Half Bridge PDF

    Complementary MOSFET Half Bridge

    Abstract: No abstract text available
    Text: P A I R C H M arch 1996 I I - D iM IC D N D U C TQ R tm NDS8839H Complementary MOSFET Half Bridge Features General Description These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		NDS8839H Complementary MOSFET Half Bridge PDF