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    Vishay Intertechnologies 11455870-10 PWR CONDITION DATA

    SPECIAL FOR H.K.TECHNOLOGIES, POWER CONDITION DATA - Bulk (Alt: 11455870-10 PWR CO)
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    Avnet Americas 11455870-10 PWR CONDITION DATA Bulk 2 1
    • 1 $69.5
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    ITT Interconnect Solutions 16SIZE COND/INS ANVIL(A1158-01

    - Bulk (Alt: 16SIZE COND/INS AN)
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    Avnet Americas 16SIZE COND/INS ANVIL(A1158-01 Bulk 5 Weeks 1
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    GEFRAN spa F003152 (ALTERNATE: PCIR 102 CONDIZIONATORE DI SEGNALE)

    Signal conditioner for linear transducers | Gefran F003152
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    RS F003152 (ALTERNATE: PCIR 102 CONDIZIONATORE DI SEGNALE) Bulk 1
    • 1 $413.03
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    Pilz International PSEN CS2.2N/PSEN CS2.1 1 UNIT (ALTERNATE: PCIR 101 CONDIZIONATORE DI SEGNALE)

    RFiD safety switch 2 safe semiconductor outputs, 5-pin M12 connector. | Pilz PSEN CS2.2N/PSEN CS2.1 1 UNIT
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    RS PSEN CS2.2N/PSEN CS2.1 1 UNIT (ALTERNATE: PCIR 101 CONDIZIONATORE DI SEGNALE) Bulk 4 Weeks 1
    • 1 $404.53
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    Spectrum Control 62-PPS-060-5-12

    Signal Conditioning 6.0 A 50/60HZ 250V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 62-PPS-060-5-12 Bulk 3,872 1
    • 1 $7
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    CONDI Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N1730 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1730 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1731 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1731 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1732 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1732 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1733 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1733 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N1734 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2382 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2382 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2383 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2383 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2384 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2384 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2385 Conditioning Semiconductor Devices 750mA Iout, 2.5kV Vrrm General Purpose Silicon Rectifier Scan PDF
    1N2385 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N5477 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N5478 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N5479 Conditioning Semiconductor Devices 3.6A Iout, 50V Vrrm General Purpose Silicon Rectifier Scan PDF
    ...

    CONDI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information November 26, 2002 6 - 18 GHz 2.8 Watt, 24 dB Power Amplifier TGA2501-EPU Key Features and Performance • • • • • • • Preliminary Measured Performance Primary Applications Bias Conditions: VD = 8V ID = 1.2A 20 S21 28


    Original     		PDF TGA2501-EPU 0007-inch

    OC74

    Abstract: No abstract text available
    Text: Advance Product Information September 27, 2004 10Gb/s Wide Dynamic Range Differential TIA TGA4817-EPU Key Features and Performance • • • • • • • • Preliminary Measured Performance Bias Conditions: V+=3.3V I+=70mA 76 Differential Zt dB-Ohm


    Original     		PDF 10Gb/s TGA4817-EPU 0007-inch OC74

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information July 16, 2003 6 - 18 GHz 2.8 Watt, 24 dB Power Amplifier TGA2501-EPU Key Features and Performance • • • • • • • Preliminary Measured Performance Primary Applications Bias Conditions: VD = 8V ID = 1.2A 20 S21 28 S21 dB


    Original     		PDF TGA2501-EPU 0007-inch

    TGA4508-EPU

    Abstract: No abstract text available
    Text: Advance Product Information February 19, 2003 Ka Band Low Noise Amplifier TGA4508-EPU Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3 V, Id = 40 mA Ga in & R etu rn L o ss d B 40 30 Gain 20


    Original     		PDF TGA4508-EPU TGA4508-EPU

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information September 24, 2003 12-18 GHz Ku-Band 2-Stage Driver Amplifier TGA2506-EPU Key Features • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Id = 40 mA • Point to Point Radio • Military Ku-Band


    Original     		PDF TGA2506-EPU

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information August 27, 2003 10Gb/s Differential TIA TGA4816-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=60mA CPD = 0.2 pF RPD = 15 Ohm 66 -3 Differential TZ


    Original     		PDF 10Gb/s TGA4816-EPU 10GHz OC-192/STM-64

    Untitled

    Abstract: No abstract text available
    Text: TLP700H Photocouplers GaAℓAs Infrared LED & Photo IC TLP700H 1. Applications • Transistor Inverters • Air Conditioner Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP700H is a photocoupler in a 6-pin SDIP package that consists of a GaAℓAs infrared light-emitting diode


    Original     		PDF TLP700H TLP700H

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information July 11, 2003 Q-Band Driver Amplifier TGA4042-EPU Key Features • • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Id = 168 mA • Point-to-Point Radio • Military Radar Systems


    Original     		PDF TGA4042-EPU

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet 32 dBm Ku-Band Amplifier TGA2503-SM Key Features • • • • • • • Typical Frequency Range: 12.5 - 16 GHz 32 dBm Nominal Psat 32 dB Nominal Gain 37 dBm Output TOI @ Pin = -20dBm 8 dB Typical Return Loss Bias Conditions: Vd = 6V, Idq = 600 mA


    Original     		PDF TGA2503-SM -20dBm 1200mA TGA2503-SM TGA2503SM

    Untitled

    Abstract: No abstract text available
    Text: GaAÄAs IRED a PHOTO-MOS FET TLP595G TELECOMMUNICATION Unit in m m DATA ACQUISITION MEASUREMENT INSTRUMENTATION The T O S H I B A T L P 5 9 5 G condists of an a l u m i n u m g alium ar s e n i d e infra red e m i tting diode o p t i c a l l y coupled to a p h o t o - M O S FET in a eight lead plastic D IP


    OCR Scan     		PDF TLP595G 150mA

    TLP55

    Abstract: No abstract text available
    Text: T O SH IB A TLP5590GM TOSHIBA PHOTOCOUPLER GaAM s IRED + PHOTO-IC TLP55 90GM) TRANSISTOR INVERTOR U nit in mm INVERTER FOR AIR CONDITIONER LINE RECEIVER IPM INTERFACES The TOSHIBA TLP559 IGM) consists of a GaA£As high-output light emitting diode and a high speed detector of one chip photo diodetransistor.


    OCR Scan     		PDF TLP5590GM) TLP55 TLP559 TLP559 200pF,

    F585

    Abstract: No abstract text available
    Text: February 6, 1997 TIM5964-16L-151 1•RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Pow er at 1dB SYMBOL CONDITION P id B Ta= 25 °C MIN. TYP. MAX. UNIT 41.5 42.5 6.0 7.0 — dBm Com pression Point Pow er G ain at 1dB G id B Com pression Point V d s = 10V


    OCR Scan     		PDF TIM5964-16L-151 TIM5964- 16L-151 2-16G1B) F585

    Untitled

    Abstract: No abstract text available
    Text: Apr. 1998 T IM 3 7 4 2 -4 5 S L -3 4 1 1. RF PERFORMANCE SPECIFICATIONS f Ta= 25 °C CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at 1dB 46.0 46.5 PldB — dBm Compression Point VDS= 10V GldB — Power Gain at 1dB 10.0 f=3.3-3.6GHz —


    OCR Scan     		PDF TIM3742-45SL-34I 3600mfl,

    74AC series

    Abstract: POM-n
    Text: 9 P R E C A U T IO N S IN D E S IG N IN G C IR C U IT S 9-1 Input Processing 1 Processing of unused gates. Inputs of CMOS IC have such a high im pedance th at the logic level becom es undefined under open conditions. If the input is a t an interm ediate level, the P -channel and N -channel transistors both turn


    OCR Scan     		PDF AC-54 74AC series POM-n

    Untitled

    Abstract: No abstract text available
    Text: 4. Solder-mounting Flat Package ICs 1. Soldering conditions a. Soldering iron Solder a t lead tem p eratu re of 2 6 0 t for no m ore than 10 seconds or a t 350°C fo r no m ore th a n 3 seconds. b. Infrared reflow 1 W e recom m end heating m ethods in far-interm ediate infrared shown a t the top and bottom of


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 37.0 38.0 — dBm


    OCR Scan     		PDF TIM1414-7-252 IGS---72pA

    Untitled

    Abstract: No abstract text available
    Text: Oct. 1998 PRELIMINARY TIM5964-4SL-031 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at ldB PldB 35.5 36.5 dBm Compression Point Vds= 10V Power Gain at ldB GldB f-5.9-6.4GHz 8.0 9.0 dB IDS-1.1A


    OCR Scan     		PDF TIM5964-4SL-031

    5252 F ic

    Abstract: No abstract text available
    Text: TOSHIBA July 1997 TIM1414-5-252 1. R F PERFO R M A N CE SP E C IFIC A T IO N S CHARACTERISTICS SYMBOL Output Power at ldB Compression Point P i dB Power Gain at ldB Compression Point GldB CONDITION MIN. TYP. MAX. UNIT 36.5 37.5 — dBm 4.5 5.5 — dB - 2.0


    OCR Scan     		PDF TIM1414-5-252 -72jjA 5252 F ic

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-15L RF Performance Specifications Ta = 25°C Characteristic Symbol Output Power at 1 dB Compression Point P 1dB Power Gain at 1dB Compression Point G 1dB Condition Unit Min. Typ. Max. dBm 41.0 42.0 - dB 6.0 7.0 -


    OCR Scan     		PDF TIM1011-15L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA July 1997 TIM1414-15-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent — ; Power Added Efficiency SYMBOL PldB GldB CONDITION VDS= 9V f= 13.75-14.5GHz Ids


    OCR Scan     		PDF TIM1414-15-252 145mA 2-11C1B)

    polyester TRW capacitor

    Abstract: No abstract text available
    Text: TR Ì TDC4169 Precision +10.000 Volt Voltage Reference The TDC4169 is a voltage reference offering exceptional accuracy and stab ility over a w ide range of tem perature and power supply conditions. The TDC4169 produces a reference voltage of +10.000 Volts generated from a power


    OCR Scan     		PDF TDC4169 TDC4169 polyester TRW capacitor

    CIRCUITS-13

    Abstract: No abstract text available
    Text: 9. PRECAUTIONS IN DESIGNING CIRCUITS 9-1 Input Processing 1 Processing of unused gate Inputs of CMOS IC have such a high im pedance th at th e logic level becom es undefined under open conditions. If th e input is a t an interm ediate level, the P-channel and N-channel transistors both tu rn on, and excessive supply cu rren t flows.


    OCR Scan     		PDF CIRCUITS-13 CIRCUITS-13

    947-75

    Abstract: No abstract text available
    Text: Oct. 1997 JS9P08-AS Draft 1 RF PERFORMANCE. SPECIFICATIONS CHARACTERISTICS O utput Powder at ldB Com pression Point Pow er Gain, at ldB Compression Point D rain C urrent Pow er Added Efficiency ( Ta= 2K°C 1 SYMBOL CONDITION MIN. TYP. M AX U N IT PldB 21.5 23.0 — dBm


    OCR Scan     		PDF JS9P08-AS -800faA 947-75

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POW ER MMIC S9782 MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminarv 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C ^ CHARACTERISTICS |SYMBOL CONDITION | M IN. 1 TYP. O u tp u t Pow er Po 37.0 38.0 v d d i= v d d 2 = v d d 3 = io v U N IT —


    OCR Scan     		PDF S9782 37dBm 1600MHz 2-11E1A)