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Keithley s900

Abstract: n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285
Text: DATE D’ORIGINE DATE ORIGINATED AUTEUR/ORIGINATOR: RT96-024 MARCH 22 1996 SEMICONDUCTOR OBJECT/SUBJECT: NUMÉRO DE RAPPORT REPORT NUMBER PAGE / SHEET 1 de/ of 80 Final Electrical Parameter Capability and Design Rule Evaluation of the 1.2 µm N-Well Single Poly Double Metal Process.