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    CONTROLLER BR6000-T6R6 V5.0 Search Results

    CONTROLLER BR6000-T6R6 V5.0 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    CONTROLLER BR6000-T6R6 V5.0 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Russian Transistor

    Abstract: BR6000 IEC60529 IEC61010 reactive compensation
    Text: Film Capacitors – Power Factor Correction Key components Series/Type: Power factor controller series BR6000–T6R6, V5.0 Ordering code: B44066R6*6E230 Date: Version: November 2009 1 Content of inside pages of data sheet. Data will be automatically entered into frontpage


    Original     		BR6000 B44066R6* 6E230 Russian Transistor IEC60529 IEC61010 reactive compensation PDF