smc diode
Abstract: No abstract text available
Text: SOLDER STENCIL GUIDELINES pattern of the opening in the stencil for the drain pad is not critical as long as it allows approximately 50% of the pad to be covered with paste. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads.
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SC-59,
SC-70/SOT-323,
OD-123,
OT-23,
OT-143,
OT-223,
SO-14,
SO-16,
smc diode
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sot 223 marking code AH
Abstract: ah sot223
Text: NUD3112 Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps, and small DC motors without the need of a free−wheeling diode. The device integrates all necessary items such as the MOSFET switch, ESD protection, and Zener clamps. It
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NUD3112
NUD3112/D
sot 223 marking code AH
ah sot223
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nud4001
Abstract: NUD4001DR2 SMD310
Text: NUD4001D Product Preview Constant Current LED Driver This device is designed to replace discrete solutions for driving LEDs in low voltage DC applications 5V, 12V or 24V. An external resistor allows the circuit designer to set the drive current for different
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NUD4001D
NUD4001D/D
nud4001
NUD4001DR2
SMD310
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Untitled
Abstract: No abstract text available
Text: MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage
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MSA1162GT1,
MSA1162YT1
SC-59
MSA1162GT1/D
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Untitled
Abstract: No abstract text available
Text: MSC2712GT1 General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage
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MSC2712GT1
SC-59
MSC2712GT1/D
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Untitled
Abstract: No abstract text available
Text: MSC2712GT1, MSC2712YT1 General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage
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MSC2712GT1,
MSC2712YT1
SC-59
MSC2712GT1/D
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MMBD201
Abstract: BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1
Text: MOTOROLA SEMICONDUCTOR — TECHNICAL Order this document bv MMBDIOIOLT1/D DATA MMBDIOIOLTI MMBD2010T~ Switching Diode Pad of the GreenMneTM Portfolio of devices with energy+onsewing traits. This switching diode has the following features: Very Low Leakage s 500 PA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD2010T~
2PHX34593F+
MMBD201
BD201
bd2010
BD301
MMBD2010
318D-03
MMBD101
MMBD2010T1
DIODE WJ SOt23
MMBD3010T1
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On Semiconductor MARKING DIAGRAM SOD-123
Abstract: No abstract text available
Text: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A
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HN1B01FDW1T1
200X400
SC-74
On Semiconductor MARKING DIAGRAM SOD-123
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318F
Abstract: NUS2401SNT1 SMD310
Text: NUS2401SNT1 Integrated PNP/NPN Digital Transistors Array This new option of integrated digital transistors is designed to replace a discrete solution array of three transistors and their external resistor bias network. BRTs Bias Resistor Transistors contain a
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NUS2401SNT1
74/Case
r14525
NUS2401SNT1/D
318F
NUS2401SNT1
SMD310
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MMBT1010LT1
Abstract: MSD1010T1 SMD310 msd101
Text: MOTOROLA Order this document by MMBT1010LT1/D SEMICONDUCTOR TECHNICAL DATA MMBT1010LT1 MSD1010T1 Low Saturation Voltage PNP Silicon Driver Transistors Motorola Preferred Devices Part of the GreenLine Portfolio of devices with energy–conserving traits.
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MMBT1010LT1/D
MMBT1010LT1
MSD1010T1
OT-23
MMBT1010LT1/D*
MMBT1010LT1
MSD1010T1
SMD310
msd101
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MSD42T1
Abstract: MSD42WT1 SMD310
Text: MSD42WT1, MSD42T1 Preferred Device NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC-59 packages which are designed for low power surface mount
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MSD42WT1,
MSD42T1
SC-70/SOT-323
SC-59
MSD42WT1/D
MSD42T1
MSD42WT1
SMD310
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MMBT1010LT1
Abstract: MSD1010T1 SMD310
Text: MOTOROLA Order this document by MMBT1010LT1/D SEMICONDUCTOR TECHNICAL DATA MMBT1010LT1 MSD1010T1 Low Saturation Voltage PNP Silicon Driver Transistors Motorola Preferred Devices Part of the GreenLine Portfolio of devices with energy–conserving traits.
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MMBT1010LT1/D
MMBT1010LT1
MSD1010T1
OT-23
MMBT1010LT1
MSD1010T1
SMD310
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Untitled
Abstract: No abstract text available
Text: MMBT1010LT1 Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLine Portfolio of devices with energy−conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in
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MMBT1010LT1
OT-23
MMBT1010LT1/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by M1MA151WKT1/D SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diodes M1MA151WKT1 M1MA152WKT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59
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M1MA151WKT1/D
M1MA151/2WKT1
inch/3000
M1MA151/2WKT3
inch/10
M1MA151WKT1
M1MA152WKT1
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort MSD601-RT1* MSD601-ST1 NPN General Purpose Amplifier Transistors Surface Mount *ON Semiconductor Preferred Device 3 2 MAXIMUM RATINGS TA = 25°C 1 Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage V(BR)CEO
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MSD601-RT1*
MSD601-ST1
MSD601
MSD601-RT1
MSD601-RT2
SC-59
318D-04
DL126TRS/D
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motorola M1MA151W
Abstract: No abstract text available
Text: MOTOROLA Order this document by M1MA151WKT1/D SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diodes M1MA151WKT1 M1MA152WKT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59
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M1MA151WKT1/D
M1MA151WKT1
M1MA152WKT1
SC-59
M1MA151/2WKT1
inch/3000
M1MA151/2WKT3to
inch/10
motorola M1MA151W
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UN2211T1
Abstract: 2214T
Text: Order this data sheet by MUN2211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor TVansistor NPN Silicon Surface Mount TVansistor With M onolithic Bias Resistor N etw ork M UN2211T1 M UN2212T1 M UN2213T1 M UN2214T1 This new series of digital transistors is designed to replace a single device and
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MUN2211T1/D
SC-59
2PHX31020F-3
UN2211T1
2214T
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motorola diode marking code
Abstract: No abstract text available
Text: Order this data sheet by M1MA141WAT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com m on A n ode Silico n Dual S w itc h in g Diode M1MA141WAT1 M1MA142WAT1 Motorola Preferred Devices This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra
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M1MA141WAT1/D
SC-59
M1MA141/2WAT1
inch/3000
M1MA141/2WAT3
inch/10
M1MA141WAT1
M1MA142WAT1
SC-70/SOT-323
M1MA14e
motorola diode marking code
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MUN2111T1
Abstract: No abstract text available
Text: Order this data sheet by MUN2111T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA B ias R e sisto r TVansistor PNP Silicon Surface Mount TVansistor With M onolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and
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MUN2111T1/D
SC-59
MUN2111T1
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M1MA152AT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by M1MA151AT1/D SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is
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M1MA151AT1/D
SC-59
M1MA151/2AT1
inch/3000
M1MA151/2AT3to
inch/10
M1MA151AT1
M1MA152AT1
M1MA152AT1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by M1MA151WAT1/D SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diodes M 1M A 151W A T1 M 1M A 152W A T1 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59
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M1MA151WAT1/D
SC-59
M1MA151/2WAT1
inch/3000
M1MA151/2WAT3
inch/10
M1MA151W
52WAT1
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marking code k4t
Abstract: A151W Q0040 A152W
Text: MOTOROLA Order this document by M1MA151WKT1/D SEMICONDUCTOR TECHNICAL DATA Common C athode Silicon Dual S w itching Diodes M 1M A151W KT1 M 1M A152W KT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59
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M1MA151WKT1/D
SC-59
M1MA151/2WKT1
inch/3000
M1MA151/2WKT3
inch/10
A151W
A152W
1MA151W
marking code k4t
Q0040
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this docum ent by M MQA5V6T1/D SEMICONDUCTOR TECHNICAL DATA M M Q A5V6T1 M M Q A 2 0V T 1 5.6 Volt SC-59 Quad M onolithic Common Anode M otorola Preferred Devices Transient Voltage Suppressor for ESD Protection SC-59 QUAD TRANSIENT VOLTAGE SUPPRESSOR
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SC-59
2PHX34051B--3
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SC2295-BT1
Abstract: marking code transistor HK
Text: MOTOROLA Order this document by MSC2295-BT1/D SEMICONDUCTOR TECHNICAL DATA NPN RF Am plifier Transistors Surface Mount MSC2295-BT1 MSC2295-CT1 COLLECTOR Motorola Preferred Devices 3 2 1 BASE EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit C ollector-B ase Voltage
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MSC2295-BT1/D
MSC2295-BT1
MSC2295-CT1
SC2295-BT1
marking code transistor HK
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