Untitled
Abstract: No abstract text available
Text: ISOMETRIC VIEW 8mm 0.31in TYP 2 THRU HOLES O 600mm 23.62in 22mm 0.88in 25mm 1in O 4mm 0.16in TYP(9) DRILLED AND TAPPED 10-32 THRU HOLES TOP VIEW 17mm 0.69in 3mm 0.12in REAR VIEW 21mm 0.81in L.S VIEW FRONT VIEW GRDBAR800 PART NUMBERS 1"X0.125" Solid Copper
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600mm
GRDBAR800
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Untitled
Abstract: No abstract text available
Text: ISOMETRIC VIEW 400mm 15.75in 8mm 0.31in TYP 2 THRU HOLES O 25mm 1in TOP VIEW 3mm 0.12in 17mm 0.69in REAR VIEW 22mm 0.88in O 4mm 0.16in TYP(9) DRILLED AND TAPPED 10-32 THRU HOLES 21mm 0.81in L.S VIEW FRONT VIEW GRDBAR600 PART NUMBERS 1"X0.125" Solid Copper
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400mm
GRDBAR600
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INFORMATION OF IC 7424
Abstract: 9C1S DIM200MKS12-A000 GP200MKS12
Text: DIM200MKS12-A000 DIM200MKS12-A000 IGBT Chopper Module Preliminary Information Replaces GP200MKS12 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5552-1.1 November 2002 KEY PARAMETERS VCES typ VCE(sat)*
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DIM200MKS12-A000
GP200MKS12
DS5552-1
INFORMATION OF IC 7424
9C1S
DIM200MKS12-A000
GP200MKS12
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INFORMATION OF IC 7424
Abstract: IC 4560 CIRCUIT DIAGRAM DIM200MLS12-A000 GP200MLS12
Text: DIM200MLS12-A000 DIM200MLS12-A000 IGBT Chopper Module Preliminary Information Replaces GP200MLS12 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5553-1.1 November 2002 KEY PARAMETERS VCES typ VCE(sat)*
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DIM200MLS12-A000
GP200MLS12
DS5553-1
INFORMATION OF IC 7424
IC 4560 CIRCUIT DIAGRAM
DIM200MLS12-A000
GP200MLS12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR MATERIAL: PBT FLAMMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRONZE NI PLATED QUALITY CLASS: 500 MATING CYCLES
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UL94-V0
E324776
18Trays/Carton
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INFORMATION OF IC 7424
Abstract: No abstract text available
Text: DIM200MKS12-A000 DIM200MKS12-A000 IGBT Chopper Module Preliminary Information Replaces GP200MKS12 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5552-1.2 November 2002 KEY PARAMETERS VCES typ VCE(sat)*
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DIM200MKS12-A000
GP200MKS12
DS5552-1
DIM200MKS12-A000
INFORMATION OF IC 7424
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Untitled
Abstract: No abstract text available
Text: DIM200MKS12-A000 DIM200MKS12-A000 IGBT Chopper Module Advance Information Replaces November 2002, issue DS5552-1.2 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5552-1.2 November 2002 KEY PARAMETERS
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DIM200MKS12-A000
DS5552-1
DIM200y
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR MATERIAL: PBT FLAMMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRONZE NI PLATED QUALITY CLASS: 500 MATING CYCLES
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UL94-V0
E324776
17-JUL-14
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M6831
Abstract: IC 7424
Text: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue August 2003, version DS5543-3.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5545-4.0 September 2003 KEY PARAMETERS
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DIM200MBS12-A000
DS5543-3
FDS5545-4
DIM200MBS12-A000
M6831
IC 7424
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INFORMATION OF IC 7424
Abstract: M6831
Text: DIM200MLS12-A000 DIM200MLS12-A000 IGBT Chopper Module Advance Information Replaces November 2002, version DS5553-1.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5553-2 March 2003 KEY PARAMETERS VCES
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DIM200MLS12-A000
DS5553-1
DS5553-2
DIM200y
INFORMATION OF IC 7424
M6831
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DIM200MBS12-A000
Abstract: DS55452
Text: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Preliminary Information Replaces issue May 2002, version DS5543-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5545-2.1 June 2002
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DIM200MBS12-A000
DS5543-1
DS5545-2
DIM200MBS12-A000
DS55452
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Untitled
Abstract: No abstract text available
Text: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue July 2003, version DS5543-3.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5545-3.1 August 2003 KEY PARAMETERS VDRM
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DIM200MBS12-A000
DS5543-3
FDS5545-3
DIM200MBS12-A000
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INFORMATION OF IC 7424
Abstract: DIM200MLS12-A000
Text: DIM200MLS12-A000 DIM200MLS12-A000 IGBT Chopper Module Replaces November 2002, version DS5553-1.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5553-2 March 2003 KEY PARAMETERS VCES typ VCE(sat)*
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DIM200MLS12-A000
DS5553-1
DS5553-2
INFORMATION OF IC 7424
DIM200MLS12-A000
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DIM400LSS12-A000
Abstract: No abstract text available
Text: DIM400LSS12-A000 DIM400LSS12-A000 Single Switch IGBT Module Preliminary Information Replaces issue May 2002, version DS5534-1.4 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5534-1.4 May 2002 KEY PARAMETERS
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DIM400LSS12-A000
DS5534-1
DIM400LSS12-A00arantee
DIM400LSS12-A000
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DIM200MHS12-A000
Abstract: No abstract text available
Text: DIM200MHS12-A000 DIM200MHS12-A000 Half Bridge IGBT Module Preliminary Information Replaces issue May 2002, version DS5535-1.4 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5535-2.1 June 2002 KEY PARAMETERS
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DIM200MHS12-A000
DS5535-1
DS5535-2
DIM200MHS12-A000
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DIM200MKS12-A000
Abstract: DS-5552
Text: DIM200MKS12-A000 DIM200MKS12-A000 IGBT Chopper Module Replaces November 2002, issue DS5552-1.2 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5552-1.2 November 2002 KEY PARAMETERS VCES typ VCE(sat)*
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DIM200MKS12-A000
DS5552-1
60arantee
DIM200MKS12-A000
DS-5552
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was dual transistor
Abstract: DIM200MBS12-A000
Text: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue May 2002, version DS5543-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5545-2.1 June 2002 KEY PARAMETERS VDRM
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DIM200MBS12-A000
DS5543-1
DS5545-2
DIM200MBS12-A000
was dual transistor
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Untitled
Abstract: No abstract text available
Text: Metallized Polypropylene Capacitor PPSA PPSA are non-inductively wound polypropylene capacitors with metal foil electrodes, internally series - connected using copper - clad steel leads and epoxy resin coating. They are ideal for applications as damping and commutating capacitors in power
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UL94V-0)
400VDC,
630VD
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bi-directional switches IGBT
Abstract: M6 transistor DIM200MHS12-A000 half bridge circuit diagram INFORMATION OF IC 7424
Text: DIM200MHS12-A000 DIM200MHS12-A000 Half Bridge IGBT Module Replaces June 2002, version DS5535-2.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5535-3.0 March 2003 KEY PARAMETERS VCES typ VCE(sat)*
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DIM200MHS12-A000
DS5535-2
DS5535-3
bi-directional switches IGBT
M6 transistor
DIM200MHS12-A000
half bridge circuit diagram
INFORMATION OF IC 7424
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Untitled
Abstract: No abstract text available
Text: DIM400LSS12-A000 DIM400LSS12-A000 Single Switch IGBT Module Replaces March 2003, version DS5534-3.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5534-4.0 July 2003 KEY PARAMETERS VCES typ VCE(sat)*
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DIM400LSS12-A000
DS5534-3
FDS5534-4
DIM400LSS12-A000
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12v to 1000v inverters circuit diagrams
Abstract: bi-directional switches IGBT DIM400LSS12-A000 6x55 diode IC LM 2003
Text: DIM400LSS12-A000 DIM400LSS12-A000 Single Switch IGBT Module Replaces June 2002, version DS5534-2.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5534-3.0 March 2003 KEY PARAMETERS VCES typ VCE(sat)*
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DIM400LSS12-A000
DS5534-2
DS5534-3
DIM400LSS12-A000
12v to 1000v inverters circuit diagrams
bi-directional switches IGBT
6x55 diode
IC LM 2003
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DIM400LSS12-A000
Abstract: IC 4560 CIRCUIT DIAGRAM
Text: DIM400LSS12-A000 DIM400LSS12-A000 Single Switch IGBT Module Replaces June 2002, version DS5534-2.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5534-3.0 March 2003 KEY PARAMETERS VCES typ VCE(sat)*
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DIM400LSS12-A000
DS5534-2
DS5534-3
DIM400LSS12-A000
IC 4560 CIRCUIT DIAGRAM
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transistor 9003
Abstract: DIM200MHS12-A000
Text: DIM200MHS12-A000 DIM200MHS12-A000 Half Bridge IGBT Module Replaces June 2002, version DS5535-2.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5535-3.0 March 2003 KEY PARAMETERS VCES typ VCE(sat)*
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DIM200MHS12-A000
DS5535-2
DS5535-3
transistor 9003
DIM200MHS12-A000
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Untitled
Abstract: No abstract text available
Text: 10 ;± e CONFIDENTIAL NO TES MATERIAL /'A Tv A ij&6# LOP ] U L92V -0 ( * ] HOUSINC:LIQUID C RYSTA L POLYMER UL9AV-0 (COLOR:BLACK 7 - y ±/l TERMINAL COPPER ALLOY FITTING NAIL COPPER ALLOY 2 7y PLATING A - $ i ^ TERMINAL . y>T #7 • EE GOLD (PITCH) UNDER PLATING : NICKEL
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OCR Scan
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PDF
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SD-503776-003
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