Untitled
Abstract: No abstract text available
Text: FCB20N60F_F085 N-Channel MOSFET December 2013 FCB20N60F_F085 N-Channel MOSFET 600V, 20A, 190mΩ D D Features Typ rDS on = 171mΩ at VGS = 10V, ID = 20A Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant G Qualified to AEC Q101
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FCB20N60F
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mosfet 600V 20A
Abstract: Mosfet 600V, 20A
Text: FCB20N60F_F085 600V N-Channe MOSFET D D 600V, 20A, 190mΩ Features G Typ rDS on = 171mΩ at VGS = 10V, ID = 20A Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G UIS Capability TO-263AB FDB SERIES S RoHS Compliant Qualified to AEC Q101 S For current package drawing, please refer to the Fairchild
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FCB20N60F
O-263AB
mosfet 600V 20A
Mosfet 600V, 20A
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Untitled
Abstract: No abstract text available
Text: SuperFETTM FCB20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCB20N60
FCB20N60
165pF)
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mosfet 10a 600v
Abstract: FCB20N60F FCB20N60FTM ED60a
Text: SuperFET FCB20N60F TM 600V N-CHANNEL FRFET Features Description • 650V @ TJ = 150°C SuperFETTM is,Fairchild' s proprietary,new generation ofhigh voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCB20N60F
FCB20N60F
mosfet 10a 600v
FCB20N60FTM
ED60a
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FCB20N60
Abstract: counterfeit FCB20N60 mosfet 20a 300v mosfet 600V 20A Mosfet 600V, 20A
Text: SuperFET FCB20N60 TM 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCB20N60
165pF)
FCB20N60
counterfeit FCB20N60
mosfet 20a 300v
mosfet 600V 20A
Mosfet 600V, 20A
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Untitled
Abstract: No abstract text available
Text: FCB20N60F N-Channel SuperFET FRFET® MOSFET 600 V, 20 A, 190 mΩ Features Description • 650V @TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching
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FCB20N60F
FCB20N60F
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Untitled
Abstract: No abstract text available
Text: FCB20N60_F085 N-Channel MOSFET November 2013 FCB20N60_F085 N-Channel MOSFET 600V, 20A, 198mΩ D D Features Typ rDS on = 173mΩ at VGS = 10V, ID = 20A Typ Qg(tot) = 72nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant G Qualified to AEC Q101
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FCB20N60
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Untitled
Abstract: No abstract text available
Text: FCB20N60F N-Channel SuperFET FRFET® MOSFET 600 V, 20 A, 190 m Features Description • 650 V @TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
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FCB20N60F
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Untitled
Abstract: No abstract text available
Text: FCB20N60 N-Channel SuperFET MOSFET 600 V, 20 A, 190 mΩ Features Description • 650V @TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching
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FCB20N60
FCB20N60
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Untitled
Abstract: No abstract text available
Text: FCB20N60 N-Channel SuperFET MOSFET 600 V, 20 A, 190 mΩ Features Description • 650 V @TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
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FCB20N60
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