TMPZ84C015
Abstract: PC ladder diagram pc worx CP215 IEC61131
Text: CP 215 IB INTERBUS Control Panel With Programming Capabilities According to IEC 61131-3 Data Sheet 6102A 08/2000 This data sheet is intended to be used in association with the user manual "Description and Installation of the CP 215 IB Control Panel". Product Description
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MA4SPS502
Abstract: No abstract text available
Text: SURMOUNTTM PIN Diode MA4SPS502 V1 Absolute Maximum Ratings1 @ TA = +25 °C unless otherwise specified Features • • • • • • • Surface Mount Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection
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MA4SPS502
MA4SPS502
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MA4SPS502
Abstract: 80E08
Text: MA4SPS502 Surface Mount Monolithic PIN Diode Chip Features n n n n n n n Case Style ODS-12701,2 Surface Mount Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance
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MA4SPS502
ODS-12701
mounE-13
0E-13
0E-14
0E-08
0E-09
100MHz
0E-10
MA4SPS502
80E08
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M.P Diode
Abstract: titanium M2 DIODE Diode M2 MP transistor MP2013 P4M2
Text: Mpulse Microwave 576 Charcot Ave, San Jose, CA 95131 408 432-1480 FAX: (408) 432-3440 http://www.mpulsemw.com e-mail: techsupport@mpulsemw.com Microwave Schottky Diodes FEATURES High F CO - N Type Low I/F Noise - P Type Sputtered Contacts for Optimum Bondability and Reliability
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100mW.
M.P Diode
titanium
M2 DIODE
Diode M2
MP transistor
MP2013
P4M2
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10n90
Abstract: No abstract text available
Text: Connectivity solutions for photovoltaic power systems LC4 -CP – Connector Parts without cable LC4 CP 970 LC4® in line diode connector assembly for photovoltaic installations1, overmolded, plug plug LC4 CP 970 IT 1. Temperature range 40 °C/+85 °C +110 °C upper limit temperature
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60529/DIN
60664/IEC
10n90
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UL746A
Abstract: No abstract text available
Text: Connectivity solutions for photovoltaic power systems LC3 -CP – Connector Parts without cable LC3 CP 970 LC3® in line diode connector assembly for photovoltaic installations1, overmolded, plug plug 1. Temperature range 2. Materials Insulating body/housing
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60529/DIN
60664/IEC
UL746A
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transmitter circuit using laser diode
Abstract: rc shunt network HFAN-02 MAX3735A industrial application of laser laser diode schematic
Text: Application Note: HFAN-2.5.0 Rev. 5; 10/08 Single-Ended vs. Differential Methods of Driving a Laser Diode Maxim Integrated Products Single-Ended vs. Differential Methods of Driving a Laser Diode 1 Introduction A proper interface circuit to connect a driver to a
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HFAN-02
transmitter circuit using laser diode
rc shunt network
MAX3735A
industrial application of laser
laser diode schematic
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS 74AC574/74ACT574 Octal D-type flip-flop; positive edge-trigger 3-State Product specification Philips Semiconductors 1997 Apr 08 Philips Semiconductors Product specification 74AC574 74ACT574 Octal D-type flip-flop; positive edge-trigger (3-State)
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74AC574/74ACT574
74AC574
74ACT574
74ACT574
74AC574
74AC574/74ACT574
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Lumberg
Abstract: photovoltaic module
Text: Connectivity solutions for photovoltaic power systems LC4 -JC – Junction boxes for Crystalline modules LC3 JC LC4 JC Photovoltaic junction box for crystalline modules1, with connecting cables and connectors alternatively LC3® or LC4® , with 2–6 spring clamps and 0–5 diodes
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request29/DIN
60664/IEC
Lumberg
photovoltaic module
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MADP-000421-12940P
Abstract: 25E-13 MA4SPS422 PIN diode MACOM SPICE model HP4291A MA4SPS421 MA4SPS42X ODS-186
Text: MA4SPS42X Series SURMOUNTTM PIN Diodes MA4SPS421, MA4SPS422 M/A-COM Products RoHS Compliant Rev. V6 MA4SPS421 MA4SPS422 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Surface Mount No Wire Bonding Required Rugged Silicon-Glass Construction Silicon Nitride Passivation
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MA4SPS42X
MA4SPS421,
MA4SPS422
MA4SPS421
MADP-000421-12940P
25E-13
MA4SPS422
PIN diode MACOM SPICE model
HP4291A
MA4SPS421
ODS-186
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TD62164AP
Abstract: No abstract text available
Text: TD62081AP/CP/F, TD62082AP/CP/F TD62083AP/CP/F, TD62084AP/CP/F INPUT CURRENT I jn mA I IN _ VIN INPUT VOLTAGE I IN _ VIN V ¡ N (V ) !q UT “ V CE(sat) 3.0 600 CURRENT I j N (mA) TD6 2 08 4A P/C P /F f r 2.0 400 V4à Y 4-/ / MAX. 1 .0 200 INPUT / M IN. /
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TD62081AP/CP/F,
TD62082AP/CP/F
TD62083AP/CP/F,
TD62084AP/CP/F
T0621
64AP/BP/F/
50iis
1D62164AP/BP/F/AF
TD62164AP
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1278n
Abstract: 4J40
Text: 4302271 □D2SS7T 2 « H A S 37E » HARRIS SEMICOND SECTOR Tecnmcai uaia Advance Information 574 564 DO-01 -08 — 03-D4-D9-06 — 07-OE-1 CP - -QO QÖ — 01 QÎ — 02 02 — 03 03 — 04 04 — 05 03 — 06 06 — 07 07 Vcc'2° GN0al0 »»•41414
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43G2271
CD54/74AC564,
CD54/74AC574
CD54/74ACT564,
CD54/74ACT574
03-D4
01-CP
Vcc-20
CD54/74AC/ACT564
CD54/74AC/ACT574
1278n
4J40
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Untitled
Abstract: No abstract text available
Text: ADV MI CR O -CMEMORY} ai dËJ D5S7S5Ö 0035574 0 2 5 7 5 2 8 ADV MICRO MEMORY 4 :89D 2 5 5 7 4 D ^ T^ 4 6-23-08 Am 3101 64-Bit Write Transparent, Inverting Output, Bipolar RAM > i DISTINCTIVE CHARACTERISTICS • • • CP High speed Fully decoded 16-word x 4-bit Schottky RAMs
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64-Bit
16-word
7320A
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54fct823a
Abstract: No abstract text available
Text: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE INTERSIL C D54/74FC T823A , CD54/74FCT823BT C D 54/74FCT824A, CD54/74FCT824BT July 1990 OE- QO • Q1 • Q2 • Q3 ■0 4 ■ Q5 ■ 06 ■ Q7 ■ 08 - CP "M R FUNCTIONAL DIAGRAM 00 Q1 02
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D54/74FC
T823A
CD54/74FCT823BT
54/74FCT824A,
CD54/74FCT824BT
CD54/74FCT823A,
CD54/74FCT824A,
CD54/74FCT824BT
FCT823A,
54fct823a
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Untitled
Abstract: No abstract text available
Text: QSFCT2X273T PRELIMINARY Q 16-Bit Register with Asynchronous Reset nchronous R < in QVSOP qs74fct2X273t FEATURES/BENEFITS • Function compatible to the 74F273 74FCT273 and 74ABT273 • CMOS power levels: <15 mW static • Available in 40-Pin QVSOP • Undershoot clamp diodes on all inputs
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QSFCT2X273T
16-Bit
qs74fct2X
74F273
74FCT273
74ABT273
40-Pin
2X273A
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D1409
Abstract: 74ABT273 74F273 74FCT273 QS74FCT2X273T 1229h
Text: QSFCT2X273T PRELIMINARY Q 16-Bit Register with Asynchronous Reset in QVSOP QS74FCT2X273T FEATURES/BENEFITS • Function compatible to the 74F273 74FCT273 and 74ABT273 • CMOS power levels: <15 mW static • Available in 40-Pin QVSOP • Undershoot clamp diodes on all inputs
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QSFCT2X273T
16-Bit
QS74FCT2X273T
74F273
74FCT273
74ABT273
40-Pin
2X273A
D1409
74ABT273
QS74FCT2X273T
1229h
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Untitled
Abstract: No abstract text available
Text: METELICS CORP Î H E T -0 7 -0 7 0 I fc.051352 □ GOGG'H 5 | MSS-40,000 Series Medium Barrier Schottky Diode metelics CORPORATION Features Applications • Low Rs — 5fi • Low NF • Mixers: single diode, image reject, image enhancement, ring quad • Broad optimum L.O. power range
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MSS-40
045-C15
bQ513Scl
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Untitled
Abstract: No abstract text available
Text: Microwave Abrupt Tuning Diodes and Chips Features • ■ ■ ■ ■ Highest Q Values Available Widest Range of Capacitance, Voltage, and Package Styles Low Post-Tuning Drift High Stability, Low Leakage Meet All MIL-STD-750 Requirements Types ■ ■ DVH6700 Series
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MIL-STD-750
DVH6700
CVH2000
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TD62083AP
Abstract: 62083A 62082cp 62084 types
Text: TD62081AP/CP/F, TD62082AP/CP/F TD62083AP/CP/F, TD62084AP/CP/F o 8ch DARLINGTOM DRIVER Unit in mm FEATURES . Output Rating . Type-AP Type-F 50V/500mA MAX. 35V/5 00mA 1IAX. Type-CP lOOV/AOOmA MAX. . Output Clamp Diode . Package .
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TD62081AP/CP/F,
TD62082AP/CP/F
TD62083AP/CP/F,
TD62084AP/CP/F
0V/500mA
DIP-18
OP-18
TD62081AP/CP/F
TD62083AP/CP/F
TD62083AP
62083A
62082cp
62084 types
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74ALS299
Abstract: No abstract text available
Text: QSFCT299T High Speed CMOS 8-Bit Universal Shift Register ß FEATURES/BENEFITS • • • • • Pin and function compatible to the 74F299 74FCT299 and 74ALS299 CMOS power levels: <7.5 mW static Available in DIP, SOIC, QSOP, ZIP, HQSOP Undershoot clamp diodes on all inputs
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QSFCT299T
74F299
74FCT299
74ALS299
MIL-STD-883
QSFCT299T
MDSL-00015-01
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diode 77G
Abstract: 77G DIODE DIODE ON SEMICONDUCTOR B34 b34 diodes on semiconductor DVH6700 varactor diode capacitance measurement dvh6731 CVH2000 DVH6742-11 varactor alpha
Text: ALPHA IND/ SEMICONDUCTOR HfiE J> • 0SA5443 0001301 Tbl M k L P Microwave Abrupt Tuning Diodes and Chips Features ■ ■ ■ ■ ■ Highest Q Values Available Widest Range of Capacitance, Voltage, and Package Styles Low Post-Tuning Drift High Stability, Low Leakage
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0SA5443
MIL-STD-750
DVH6700
CVH2000
diode 77G
77G DIODE
DIODE ON SEMICONDUCTOR B34
b34 diodes on semiconductor
varactor diode capacitance measurement
dvh6731
DVH6742-11
varactor alpha
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dvh6731
Abstract: No abstract text available
Text: ALPHA IND/ S E M I C O N D U C T O R 4fiE D • 0 5 6 5 4 4 3 00D 1 30 1 Tbl * A L P Microwave Abrupt Tuning Diodes and Chips Features ■ ■ ■ ■ ■ Highest Q Values Available Widest Range of Capacitance, Voltage, and Package Styles Low Post-Tuning Drift
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MIL-STD-750
DVH6700
CVH2000
convention802
dvh6731
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Untitled
Abstract: No abstract text available
Text: MSS-30,000 Series Low Barrier Schottky Diode metelics CORPORATION Features Applications • L o w Rs— 5Q • Mixers: single diode, im age reject, im age enhancem ent, ring quad • Lo w NF • Doublers • A vailable in m any configurations • M odulators
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MSS-30
046-C
046-P55
046-P86
050-C
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MSS-40 schottky diode
Abstract: 448-E45 RS+30+12VDC+BL/m38 schottky metelics FSCM 59365
Text: MSS-40,000 Series Medium Barrier Schottky Diode metelics CORPORATION Features Applications • Low Rs — 50 • Low NF • Mixers: single diode, image reject, image enhancement, ring quad • Broad optimum L.O. power range • Doublers • Available in many configurations
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MSS-40
045-CI
045-P55
045-P86
048-C
MSS-40 schottky diode
448-E45
RS+30+12VDC+BL/m38 schottky
metelics FSCM 59365
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