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Catalog Datasheet	MFG & Type	PDF	Document Tags
cbrhdsh1-40l Abstract: No abstract text available Text: PROCESS CPD56 Schottky Rectifier 1 Amp, Low VF Schottky Barrier Rectifier Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 46 x 46 MILS Die Thickness 11.8 MILS Anode Bonding Pad Area 32 x 32 MILS Top Side Metalization Ag - 20,000A Back Side Metalization	Original	PDF	CPD56 CBRHDSH1-40L cbrhdsh1-40l

Catalog Datasheet

MFG & Type

PDF

Document Tags

cbrhdsh1-40l

Abstract: No abstract text available
Text: PROCESS CPD56 Schottky Rectifier 1 Amp, Low VF Schottky Barrier Rectifier Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 46 x 46 MILS Die Thickness 11.8 MILS Anode Bonding Pad Area 32 x 32 MILS Top Side Metalization Ag - 20,000A Back Side Metalization

Original

PDF

CPD56 CBRHDSH1-40L cbrhdsh1-40l