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    CPD91 Search Results

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    CPD91 Price and Stock

    3M Interconnect C-PD914DD

    CHEMICAL SORBENT SPILL MANAGMENT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C-PD914DD Bulk 1
    • 1 $116.08
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    • 100 $116.08
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    Mouser Electronics C-PD914DD 2
    • 1 $25.83
    • 10 $25.83
    • 100 $23.23
    • 1000 $21.5
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    Newark C-PD914DD Pack 33 1
    • 1 $22.81
    • 10 $22.81
    • 100 $22.81
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    Crystek Corporation CCPD-915M-50-250

    XTAL OSC XO 250.0000MHZ LVPECL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CCPD-915M-50-250 100
    • 1 -
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    • 100 $21.9731
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    Crystek Corporation CCPD-912X-25-125

    XTAL OSC XO 125.0000MHZ LVPECL
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    DigiKey CCPD-912X-25-125 100
    • 1 -
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    • 100 $20.3201
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    Crystek Corporation CCPD-915M-50-212.5

    XTAL OSC XO 212.5000MHZ LVPECL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CCPD-915M-50-212.5 100
    • 1 -
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    • 100 $17.1841
    • 1000 $17.1841
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    Crystek Corporation CCPD-912X-25-77.76

    XTAL OSC XO 77.7600MHZ LVPECL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CCPD-912X-25-77.76 100
    • 1 -
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    • 100 $20.1006
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    Find more CPD91 price and stock on Findchips.com

    CPD91 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CPD91 Central Semiconductor Switching Diode Low Leakage Switching Diode Chip Original PDF
    C-PD914DD 3M Uncategorized - Miscellaneous - CHEMICAL SORBENT PAD C-PD914DD E Original PDF
    CPD91V Central Semiconductor Switching Diode Low Leakage Switching Diode Chip Original PDF

    CPD91 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    r2 137

    Abstract: CMPD6001 CPD91V CMDD6001 CMLD6001 CMLD6001DO CMOD6001
    Text: PROCESS CPD91V Switching Diode Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au-As - 12,000Å


    Original     		PDF CPD91V CMPD6001 CMOD6001 CMLD6001 CMLD6001DO CMDD6001 r2 137 CPD91V CMDD6001 CMLD6001 CMLD6001DO CMOD6001

    CMDD6001

    Abstract: CMLD6001 CMLD6001DO CMOD6001 CMPD6001 CPD91V
    Text: PROCESS CPD91V Switching Diode Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au - 18,000Å


    Original     		PDF CPD91V CMPD6001 CMOD6001 CMLD6001 CMLD6001DO CMDD6001 Aug91V CMDD6001 CMLD6001 CMLD6001DO CMOD6001 CPD91V

    CPD91V

    Abstract: CMDD6001 CMLD6001 CMLD6001DO CMOD6001 CMPD6001
    Text: PROCESS CPD91V Central Switching Diode Semiconductor Corp. Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization


    Original     		PDF CPD91V CMPD6001 CMOD6001 CMLD6001 CMLD6001DO CMDD6001 CPD91V CMDD6001 CMLD6001 CMLD6001DO CMOD6001

    diode

    Abstract: CMDD6001 CMLD6001 CMLD6001DO CMOD6001 CMPD6001 CPD91 11x11
    Text: PROCESS CPD91 Central Switching Diode Semiconductor Corp. Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 9.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization


    Original     		PDF CPD91 CMPD6001 CMOD6001 CMLD6001 CMLD6001DO CMDD6001 diode CMDD6001 CMLD6001 CMLD6001DO CMOD6001 CPD91 11x11

    LT 5251

    Abstract: DYNSLT ON5292 vn 530 sp 31 x 132 SC41-5715-00 BA 59 04 AFP LT 542 seven segment display data sheet 7 segment display LT 542 SST 90A 6B Diode NBR4
    Text: AS/400e DDS Reference Version 4 AS/400e DDS Reference Version 4 Copyright International Business Machines Corporation 1999, 2000. All rights reserved. US Government Users Restricted Rights – Use, duplication or disclosure restricted by GSA ADP Schedule Contract


    Original     		PDF AS/400e OS/400 LT 5251 DYNSLT ON5292 vn 530 sp 31 x 132 SC41-5715-00 BA 59 04 AFP LT 542 seven segment display data sheet 7 segment display LT 542 SST 90A 6B Diode NBR4

    CP588V

    Abstract: CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91
    Text: PCN #: 105 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Small signal discrete semiconductors, wafers, and die in chip form.


    Original     		PDF CPD48 CPD76 CPD78 CPD80 CPD83 CPD88 CPD91 CPD92 CPD96 CP188 CP588V CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


    Original     		PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    UJT 2n3904

    Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
    Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24


    Original     		PDF

    2N2645

    Abstract: cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V
    Text: PCN #: 119 Notification Date: 16 December 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Small signal discrete semiconductor wafers. Extent of Change: Wafer diameter has been changed from 4” to 5”.


    Original     		PDF CPD83V-1N914-WN CPD83V-1N914A-WN CPD83V-CMPD7000-WS CPD83V-1N4148-WS CPD83V-1N914-WR CPD92X-CMPD6263-WR CPZ25-CMZ5937B-WN CPZ25-CMZ5940B-WN CPZ25-1N4752A-WN CPZ25-1N5918B-WN 2N2645 cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V

    marking code fs

    Abstract: No abstract text available
    Text: Central” CMLD6001 DO Semiconductor Corp. SURFACE MOUNT PICO m inr DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6OOIDO type contains Two 2 Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial


    OCR Scan     		PDF CMLD6001 CPD91) OT-563 OT-563 marking code fs

    D102

    Abstract: d1 marking diode
    Text: Central CMPD6001 CMPD6001A CMPD6001C CMPD6001S Semiconductor Corp. SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring an


    OCR Scan     		PDF CMPD6001 CMPD6001A CMPD6001C CMPD6001S OT-23 D102 d1 marking diode

    Untitled

    Abstract: No abstract text available
    Text: Central CMLD6001 TM Semiconductor Corp. SURFACE MOUNT PICO m inr DUAL, ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001 type contains Two 2 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar


    OCR Scan     		PDF CMLD6001 OT-563 OT-563

    CSI021

    Abstract: cm15 jv capacitor LT 5216 153 SP-J BV EI 301 0546 fl016 052416 dm 0565 TA3M 100P6S-A
    Text: <* ^>0^ Tentative Specifications REV.A ^ _ . . r . e s c r ip tio n . Mitsubishi microcomputers Specifications in this manual are tentative and subject to change. M 3 0 2 1 8 G r O lip SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M30218 group of single-chip microcomputers are built using the high-performance silicon gate CMOS


    OCR Scan     		PDF M30218GrOlip 16-BIT M30218 M16C/60 100-pin DD-14. CSI021 cm15 jv capacitor LT 5216 153 SP-J BV EI 301 0546 fl016 052416 dm 0565 TA3M 100P6S-A

    Untitled

    Abstract: No abstract text available
    Text: Central“ CMDD6001 Semiconductor Corp. SUPERmini SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD6001 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed


    OCR Scan     		PDF CMDD6001 CPD91) 31-October CMDD6001 OD-323 OD-323

    marking D3 SOT26

    Abstract: LR1 DIODE MARKING CODE
    Text: Central“ CMXD6001 Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar


    OCR Scan     		PDF CMXD6001 OT-26 CPD91) CMXD6001 OT-26 marking D3 SOT26 LR1 DIODE MARKING CODE

    R1 marking

    Abstract: No abstract text available
    Text: Central" CMKD6001 Semiconductor Corp. SURFACE MOUNT ULTRAmini TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar


    OCR Scan     		PDF CMKD6001 CPD91) OT-363 OT-363 R1 marking