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    CQX 47 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CQ 945

    Abstract: CQ12B CQ22B CD50A HP4192A ISO-14001 TS-16949 2x70mH
    Text: CD & CQ Series CM Interface Chokes for Data and Signal Lines Features • High attenuation over a wide frequency range • Low interwinding and coupling capacitance • Wide inductance range • Excellent quality at extremely competitive price due to high volume production


    Original     		ISO-9001 TS-16949 ISO-14001 J-STD-020C 42Vac 50/60Hz) 80Vdc IEC68-1 CQ 945 CQ12B CQ22B CD50A HP4192A 2x70mH PDF

    Untitled

    Abstract: No abstract text available
    Text: CD & CQ Series CM Interface Chokes for Data and Signal Lines Features • High attenuation over a wide frequency range • Low interwinding and coupling capacitance • Wide inductance range • Excellent quality at extremely competitive price due to high volume production


    Original     		ISO-9001 TS-16949 ISO-14001 J-STD-020C 42Vac 50/60Hz) 80Vdc IEC68-1 PDF

    TSSP 4400

    Abstract: CQX 47 CQX 13 tssp
    Text: TELEFUNKEN Semiconductors TSSP 4400 GaAs/GaAlAs Infrared Emitting Diode in Side View Package Description TSSP 4400 is a high intensity infrared emitting diode in GaAlAs on GaAs – technology, molded in a clear, blue–grey tinted plastic package with spherical side view lens.


    Original     		D-74025 TSSP 4400 CQX 47 CQX 13 tssp PDF

    pd16m

    Abstract: A7B1 A10B1 A8b2 DM4M a0b1 U16-31 A6B1 U32A1 U34-36
    Text: Enhanced Memory Systems Inc. Features DM4M32SJ 4Mb x 32 Enhanced DRAM SIMM Product Specification Architecture The DM4M32SJ achieves 4Mb x 32 density by mounting 32 4M x 1 EDRAMs, packaged in 28-pin plastic SOJ packages on both sides of the multilayer substrate. Four buffers


    Original     		DM4M32SJ DM4M32SJ 28-pin C32-33 pd16m A7B1 A10B1 A8b2 DM4M a0b1 U16-31 A6B1 U32A1 U34-36 PDF

    CQX 86

    Abstract: U1615 U2-14 U217 u416 CQX 89 CQv 89 512kx8 dram simm u332 u1515
    Text: DM1M64DTE/DM1M72DTE Multibank Burst EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page


    Original     		DM1M64DTE/DM1M72DTE 64/1Mb 16Kbytes 168BD5-TR DM512K72DTE 72-bit CQX 86 U1615 U2-14 U217 u416 CQX 89 CQv 89 512kx8 dram simm u332 u1515 PDF

    D0-35

    Abstract: No abstract text available
    Text: DM512K32ST/DM512K36ST 512Kb x 32/512Kb x 36 EDRAM SIMM Enhanced Memory Systems Inc. Product Specification Features Architecture The DM512K36ST achieves 512K x 36 density by mounting five 512K x 8 EDRAMs, packaged in 44-pin plastic TSOP-II packages, on a multi-layer substrate. Four


    Original     		DM512K32ST/DM512K36ST 512Kb 32/512Kb DM512K36ST 44-pin DM2213 DM512K32 DM2203T-XX, DM2213T-XX, DM512K32ST) D0-35 PDF

    gigabyte 945

    Abstract: gigabyte 945 circuit diagram U727 edram
    Text: Enhanced Memory Systems Inc. DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a multilayer substrate. Eight DM2202


    Original     		DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 DM1M36SJ 28-pin DM2202 DM2212 DM1M32SJ DM1M36SJ1 gigabyte 945 gigabyte 945 circuit diagram U727 edram PDF

    CAL03

    Abstract: ramtron DM2202J
    Text: Enhanced Memory Systems Inc. DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM2M36SJ achieves 2Mb x 36 density by mounting 18 1Mb x 4 EDRAMs, packaged in 28pin plastic SOJ packages, on both sides of the multi-layer


    Original     		DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 DM2M36SJ 28pin DM2202 DM2212 DM2M32SJ DM2M36SJ CAL03 ramtron DM2202J PDF

    U10A-14

    Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
    Text: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page


    Original     		DM512K64DT6/DM512K72DT6 512Kb 64/512Kb 168BD5-TR DM512K72DT 72-bit U10A-14 U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318 PDF

    Photo diode TFK S 186 P

    Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
    Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission


    Original     		PDF

    U1615

    Abstract: u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123
    Text: DM1M64DT6/DM1M72DT6 Multibank EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page


    Original     		DM1M64DT6/DM1M72DT6 64/1Mb 16Kbytes 168BD5-TR DM1M72DT6 72-bit U1615 u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123 PDF

    CQX 47

    Abstract: CQX47 CLS20
    Text: TELEFUNKEN ELECTRONIC 17E D • Û^EÜO^b OOOÔbSM COX 47 m J I F M B S I M e le c tro n ic Ctm Iiv« Technologies _ T - W -11 GaAs Infrared Diode in Plastic Case Applications: Radiation source in near infrared range, especially for remote control


    OCR Scan     		PDF

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


    OCR Scan     		AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 PDF

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan     		PDF

    Telefunken diode color code

    Abstract: TDSG5160 telefunken led display
    Text: T em ic TELEFUNKEN Semiconductors Explanation of Technical Data TEMIC light emitting diodes and displays are generally designated in accordance with the TEMIC designation system: TL. = Light emitting diode TD. = Display The following figures show how the components can be identified.


    OCR Scan     		TDSG5160 TLHR5401AS12. Telefunken diode color code TDSG5160 telefunken led display PDF

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


    OCR Scan     		PDF

    led 7 segment anode TIL 702

    Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
    Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9


    OCR Scan     		10x10 led 7 segment anode TIL 702 trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150 PDF

    5202 GE

    Abstract: KA 7502 STS7102 TS7101
    Text: TELEFUNKEN ELECTRONIC m 44E » ñ ^ D O T b 0011175 2 B1ALG6 Infrared Emitting Diodes G aA s IR Emitting Diodes in Plastic Package Characteristics Package Type I. Dimensions see page 4 9 -5 3 at at U mW/sr mA fp= 1 0 y s /F = 1 A ns mA TV* 1 8 m m Blue p la stic p a c ka ge


    OCR Scan     		CQY37N 5202 GE KA 7502 STS7102 TS7101 PDF

    vh41

    Abstract: u327
    Text: DM 1M36SJ & DM 1M32SJ 1Mbx 36/1Mbx 32EnhancedDRAMSIMM A / r ^ M I R O N Features Preliminary Datasheet Architecture m Compatibility with JEDEC • ■ ■ ■ ■ ■ 1M x 36 DRAM SIMM Configuration Allows Performance Upgrades in System Integrated 512 \ 36 SRAM Cache Row Register Allows 15ns


    OCR Scan     		DM1M36SJ DM1M32SJ 36/1Mbx 32EnhancedDRAMSIMM 58-Gbyte/sec 1M36SJ 28-Part vh41 u327 PDF

    sgs mosfet

    Abstract: buz11 application note FZJ 101
    Text: rZ J *> 7# . S C S -T H O M S O N l«BËl5i i [ L i e ï » H 0 g i APPLICATION NOTE HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET'transistor are fabricated using VLSI technology. A simple chip contains thousands


    OCR Scan     		STVHD90. STVHD90 sgs mosfet buz11 application note FZJ 101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 43G227 1 IHAS GGS3177 22T 33 HARRIS HSP43881 SEMICONDUCTOR Digital Filter January 1994 Features Description • Eight Filter Cells • 0 to 30MHz Sample Rate The HSP43881 is a video speed Digital Filter DF designed to efficiently implement vector operations such as FIR digital


    OCR Scan     		43G227 GGS3177 HSP43881 30MHz HSP43881 26-bit SUMO-25, PDF

    DS1020

    Abstract: DS1020-025 DS1020-050 DS1020-100 DS1020-200 G0032
    Text: DALLA S S E M I C O N D U C T O R CORP 5bl4130 3*ïE » DAL Q D OB EI S DS1020 PRELIMINARY DS1020 DALLAS Programmable 8-Bit Silicon Delay Line SEMICONDUCTOR FEATURES PIN DESCRIPTION •All-silicon time delay 1 16 ^ VCC [ 2 15 ] 0 U T in C • Models with 0.25ns, 0.5ns, 1ns, and 2ns steps


    OCR Scan     		16-pin DS1020 5hl413D G3223 ds1020 Sbl413G G00321Ã 2hl4130 0G03224 DS1020-025 DS1020-050 DS1020-100 DS1020-200 G0032 PDF

    U615

    Abstract: DM 0365 R pin EQUIVALENT U716 U1018
    Text: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32EnhancedDRAMSIMM r ^ p M T R O N Features • 4Kbyte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32EnhancedDRAMSIMM DM2212J-XX, OM2M32SJ) DM2M36SJ U615 DM 0365 R pin EQUIVALENT U716 U1018 PDF

    Untitled

    Abstract: No abstract text available
    Text: DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM r ^ M T R O N Product Specification Features Architecture • 2KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 DM1M36SJ PDF