LED56F
Abstract: F5E3 IR LED 940 nm
Text: Hermetic Light Emitting Diodes TO-46 Diode Package Flat Lens 0.209 (5.31) 0.184 (4.67) 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) Part Number PO @ 100 mA IF VF @ 100 mA IF (mW) (V) min max max IR @ 3 V VR (µA)
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1N6265
CQX15
CQX17
LED55BF
LED55CF
LED56F
F5E3
IR LED 940 nm
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marking code motorola ic
Abstract: CQX 88 MSB71O-QTI 318D-03 MSB71O-RT1
Text: Order this data sheet by MSB71 O-QTl/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-59 package which is designed for low power
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MSB71
SC-59
inch/3000
MK145BP,
MSB71O-QTI
marking code motorola ic
CQX 88
MSB71O-QTI
318D-03
MSB71O-RT1
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Untitled
Abstract: No abstract text available
Text: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
D-74025
16-Nov-99
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CQX 88
Abstract: No abstract text available
Text: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
D-74025
20-May-99
CQX 88
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CQX48B
Abstract: No abstract text available
Text: CQX48 Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
D-74025
16-Nov-99
CQX48B
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CQX 88
Abstract: BPW78 CQX48
Text: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
D-74025
16-Nov-99
CQX 88
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BPW78
Abstract: CQX48
Text: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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Original
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CQX48
CQX48
BPW78
BPW78
D-74025
16-Nov-99
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Untitled
Abstract: No abstract text available
Text: CQX48 Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
08-Apr-05
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BPW78
Abstract: BPW78A BPW78B bpw 104
Text: BPW78 Silicon NPN Phototransistor Description BPW78 is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package. A small recessed lens provides a high sensitivity in a low profile case. The epoxy package itself is an IR filter, spectrally
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BPW78
BPW78
850nm)
D-74025
15-Jul-96
BPW78A
BPW78B
bpw 104
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CQX 88
Abstract: BPW78 CQX48
Text: CQX48 Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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Original
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CQX48
CQX48
BPW78
BPW78
18-Jul-08
CQX 88
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CQX 86
Abstract: U1615 U2-14 U217 u416 CQX 89 CQv 89 512kx8 dram simm u332 u1515
Text: DM1M64DTE/DM1M72DTE Multibank Burst EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page
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DM1M64DTE/DM1M72DTE
64/1Mb
16Kbytes
168BD5-TR
DM512K72DTE
72-bit
CQX 86
U1615
U2-14
U217
u416
CQX 89
CQv 89
512kx8 dram simm
u332
u1515
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gigabyte 945
Abstract: gigabyte 945 circuit diagram U727 edram
Text: Enhanced Memory Systems Inc. DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a multilayer substrate. Eight DM2202
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DM1M36SJ/DM1M32SJ
1Mbx36/1Mbx32
DM1M36SJ
28-pin
DM2202
DM2212
DM1M32SJ
DM1M36SJ1
gigabyte 945
gigabyte 945 circuit diagram
U727
edram
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U2794B
Abstract: U2794B-AFS AD620 U2794B-AFSG3 AD620 application note 9842
Text: U2794B TELEFUNKEN Semiconductors 1000 MHz Quadrature Demodulator Description U2794B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from
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U2794B
U2794B
D-74025
U2794B-AFS
AD620
U2794B-AFSG3
AD620 application note
9842
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AD620
Abstract: U2794B ad620 filter st 9919 9842
Text: U2794B TELEFUNKEN Semiconductors 1000 MHz Quadrature Demodulator Description U2794B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from
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U2794B
U2794B
D-74025
AD620
ad620 filter
st 9919
9842
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pin diagram of IC 9976
Abstract: ad620 filter AD620 U2791B U2791B-FS ST 9841
Text: U2791B TELEFUNKEN Semiconductors 1000 MHz Quadrature Demodulator Description U2791B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from
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U2791B
U2791B
D-74025
pin diagram of IC 9976
ad620 filter
AD620
U2791B-FS
ST 9841
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AD620 ic circuits used in other application
Abstract: st 13007 AD620 AD620 datasheet CQX 88 ST 9841 pin diagram of IC 9976 AD620 application note CI 13007 datasheet and application AD620
Text: U2791B 1000 MHz Quadrature Demodulator Description U2791B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TEMIC Semiconductors’ advanced UHF technology. This demodulator features a frequency range from 100 – 1000 MHz, low current consumption, selectable
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U2791B
U2791B
D-74025
15-Oct-98
AD620 ic circuits used in other application
st 13007
AD620
AD620 datasheet
CQX 88
ST 9841
pin diagram of IC 9976
AD620 application note
CI 13007
datasheet and application AD620
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pin diagram of IC 9976
Abstract: AD620 U2791B U2791B-FS ST 9841
Text: U2791B TELEFUNKEN Semiconductors 1000 MHz Quadrature Demodulator Description U2791B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from
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U2791B
U2791B
D-74025
pin diagram of IC 9976
AD620
U2791B-FS
ST 9841
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PDF
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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led 7 segment anode TIL 702
Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9
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10x10
led 7 segment anode TIL 702
trw 007 diodes
TDDG 5250 m
817 optron
telefunken transistor
opto smd code marking NEC
TDDG 5250
hoa 865
DIODE PK IN 5401
7segment sm 4150
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vh41
Abstract: u327
Text: DM 1M36SJ & DM 1M32SJ 1Mbx 36/1Mbx 32EnhancedDRAMSIMM A / r ^ M I R O N Features Preliminary Datasheet Architecture m Compatibility with JEDEC • ■ ■ ■ ■ ■ 1M x 36 DRAM SIMM Configuration Allows Performance Upgrades in System Integrated 512 \ 36 SRAM Cache Row Register Allows 15ns
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DM1M36SJ
DM1M32SJ
36/1Mbx
32EnhancedDRAMSIMM
58-Gbyte/sec
1M36SJ
28-Part
vh41
u327
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PDF
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AD620
Abstract: U2791B U2791B-FS
Text: Tem ic U2791B S e m i c o n d u c t o r s 1000 MHz Quadrature Demodulator Description U2791B silicon monolithic integrated circuit is a quadra ture demodulator that is manufactured using TEMIC Semiconductors’ advanced UHF technology. This demodulator features a frequency range from
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U2791B
U2791B
D-74025
15-Oct-98
AD620
U2791B-FS
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1021 Programmable 8-Bit Silicon Delay Line PIN ASSIGNMENT FEATURES • All-silicon time delay c 16 15 : OUT Q/PO c 3 14 S P1 c 4 13 : 12 : P7 11 : 10 C E c • Programmable using 3-wire serial port or 8-bit part llel port P2 c P3 c • Leading and trailing edge accuracy
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DS1021
16-pin
DS1021S
DS1021
DS1021s.
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