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    CR SOT23 Search Results

    CR SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    CR SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CRB 1.0 m

    Abstract: CRB SERIES MARKING CODE S03
    Text: CRA/CR Single T Filter Network Specifications: Resistor Tolerance TCR ppm/0C Resistor Power Rating (700C) Capacitor Tolerance Capacitor Voltage rating Operating Temp. Range (0C) +/-10% +/- 200 100mW +/-20% 20 v -55 ~ +150 Marking “CRA” or “ CRB “


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    100mW OT-23 250pF OT-23 CRB 1.0 m CRB SERIES MARKING CODE S03 PDF

    Untitled

    Abstract: No abstract text available
    Text: C945LT1 NPN * “G” Lead Pb -Free 3 1 2 C945LT1=CR WEITRON http://www.weitron.com.tw C945LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Min Typ Max hFE 130 - 400 - VCE(sat) - - 0.3 Vdc VBEF - - 1.4 V fT 150 -


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    C945LT1 C945LT1 10mAdc) 310mA) -10mAdc, OT-23 PDF

    C945LT1

    Abstract: C945L c945
    Text: C945LT1 NPN Transistors P b Lead Pb -Free 3 1 2 C945LT1=CR WEITRON http://www.weitron.com.tw C945LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Min Typ Max hFE 130 - 400 - VCE(sat) - - 0.3 Vdc VBEF - - 1.4 V fT


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    C945LT1 C945LT1 10mAdc) 310mA) -10mAdc, OT-23 C945L c945 PDF

    TSB1G7000-E

    Abstract: CL21B105KONE TM162JCAWG1 GMC21X7R104K50NTLF DC-003-250 CL21B105 TSB1G7000 GMC21X7R104K50NT ECS-80-20-5PX-DN AXJ115301S
    Text: KEY Microchip Technology Incorporated 2355 W. Chandler Blvd. Chandler, AZ 85224-6199 CR: Cross CS: Consign PL: Pack List ASSEMBLY NUMBER: 12-00723 REV: 7 ASSEMBLY NAME: FINAL ASSY, EXPLORER 16 DEVELOPMENT BOARD Qty Part Number Rev D: Drawing B: BOM LBL: Label


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    DS30030 DS51282 DS30210 dsPIC33 PIC24F DS51588 CAB0003 RS-232 TSB1G7000-E CL21B105KONE TM162JCAWG1 GMC21X7R104K50NTLF DC-003-250 CL21B105 TSB1G7000 GMC21X7R104K50NT ECS-80-20-5PX-DN AXJ115301S PDF

    Untitled

    Abstract: No abstract text available
    Text: CR X resistors terminator and filter networks features • • • • • • Thin film on silicon Low parasitic inductance Effective high frequency termination Filters at source of emissions Effective real estate savings Products with lead-free terminations meet RoHS requirements


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    100mW PDF

    TC2055-2.7VCT

    Abstract: 952-1478-1-ND
    Text: Microchip Technology Incorporated 2355 W. Chandler Blvd. Chandler, AZ 85224-6199 M KEY D: Drawing B: BOM P: Part LBL: Label Bill of Materials ASSEMBLY NUMBER: 102-00410 ASSEMBLY NAME: MCP16301 Cuk LED Driver Qty Reference CR: Cross CS: Consign PL: Pack List


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    MCP16301 MCP16301 102-00410-D 104-00410-Drwin 952-1478-1-ND S1751-46R SJ5007-0-ND TC2055-2.7VCT 952-1478-1-ND PDF

    470M

    Abstract: MIL-R-55342 cr SOT23
    Text: terminator and filter networks Fast edge-rated clock signals exhibit transmission line effects resulting in wave reflections and ringing. KOA’s CR X series networks effectively eliminate these transmission line effects. These low profile surface mount networks provide point of contact filtering and are designed


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    100mW MIL-R-55342 MIL-STD-202 MlL-STD-202 470M cr SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN7280A SVC230 Varactor Diode http://onsemi.com Monolithic dual Varactor Diode for FM Tuning 16V, 50nA, CR=1.65, Q=100, CP Features • • • • Twin type varactor diode having an excellent large input characteristic, for use in FM electronic tuning applications


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    EN7280A SVC230 SVC230 PDF

    MV64460

    Abstract: HC74 G4 C438 capacitor SDA 5450 c48 31F4 R731 ABB C564 transistor C546 C587 MR 4710
    Text: CR-1 : @BUCKEYE_PROJ_LIB.BUCKEYE2 SCH_1 :PAGE1 8 6 7 5 4 3 2 1 TABLE OF CONTENTS PAGE - CONTENTS 1 TABLE OF CONTENTS, POWER SUPPLY LIST 2 BLOCK DIAGRAM 3 POWERPC 750GX ADDRESS BUS 4 POWERPC 750GX DATA BUS 5 POWERPC 750GX CONTROL, JTAG 6 POWERPC 750GX POWER


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    750GX 38P1931 38P1931 MV64460 HC74 G4 C438 capacitor SDA 5450 c48 31F4 R731 ABB C564 transistor C546 C587 MR 4710 PDF

    MV64460

    Abstract: 31F4 TP014 TEA 2025 equivalent I384 header10x2 transistor c548 413 mr 6710 30B2 diode af4 c448 100 12p
    Text: CR-1 : @BUCKEYE_PROJ_LIB.BUCKEYE2 SCH_1 :PAGE1 8 6 7 5 4 3 2 1 TABLE OF CONTENTS PAGE - CONTENTS 1 TABLE OF CONTENTS, POWER SUPPLY LIST 2 BLOCK DIAGRAM 3 POWERPC 750FX ADDRESS BUS 4 POWERPC 750FX DATA BUS 5 POWERPC 750FX CONTROL, JTAG 6 POWERPC 750FX POWER


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    750FX 38P1904 38P1904 MV64460 31F4 TP014 TEA 2025 equivalent I384 header10x2 transistor c548 413 mr 6710 30B2 diode af4 c448 100 12p PDF

    20B5

    Abstract: H47895-001 G46739-001 20B5 voltage G83568-001 A36096
    Text: CR-1 : @GALILEO_LIB.GALILEO SCH_1 :PAGE1 8 7 6 5 4 3 2 1 D D GALILEO GEN2 INTEL QUARK X1000 C C FAB H PB: H48142-207 PBA:H48125-800 B LB6V1 LB1 EMPTY B LB3 LABEL LABEL WEEE_LABEL_9X5MM A WEEE 1500X500_TARGET SERIAL NUMBER 1375X250_TARGET MAC ADDRESS LABEL


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    X1000 H48142-207 H48125-800 1500X500 1375X250 H38681 0402LF 20B5 H47895-001 G46739-001 20B5 voltage G83568-001 A36096 PDF

    cm 68001

    Abstract: No abstract text available
    Text: Ordering number : EN6800A SVC236 Varactor Diode http://onsemi.com Monolithic dual Varactor Diode for FM Tuning 16V, 50nA, CR=5.0, Q=70, CP Features • • • • • Low voltage 6.5V Twin type varactor diode with good large-signal characteristics for FM receiver electronic tuning use


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    EN6800A SVC236 SVC236-applied cm 68001 PDF

    512X12

    Abstract: EM167200 PIC16F84 usb programmer circuit 24cxx pinout PIC16F84A I2C PIC16F877 psp PIC16F628 i2c slave
    Text: MI CR OC ON TR OL LE RS PRODUCT LINE CARD S EC PR U R O E D D U A C T TS A MICROPERIPHERALS PRODUCTS DIVISION SECOND QUARTER 2000 CURRENT MICROCHIP PRODUCT LINE PICmicro MICROCONTROLLER FAMILY PRODUCTS Program Memory Analog EEPROM Data 8-Bit Com Memory RAM


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    10-Bits PIC12CXXX 400ns PIC12C508 512x12 PIC12C508A PIC12C509 1024x12 PIC12C509A EM167200 PIC16F84 usb programmer circuit 24cxx pinout PIC16F84A I2C PIC16F877 psp PIC16F628 i2c slave PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2195I SVC203C Varactor Diode http://onsemi.com Monolithic dual Varactor Diode for FM Tuning 16V, 50nA, CR=4.6, Q=60, CP Features • • • Dual type with a good linearity of C-V characteristic. Excels in large input characteristics Small-sized package CP usable in ultrasmall-sized sets (surface mount type)


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    EN2195I SVC203C PDF

    Untitled

    Abstract: No abstract text available
    Text: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF


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    BFT93 BFR93 BFR93A. PDF

    SOT-23 ZF

    Abstract: KDS226 MARKING ZF SOT-23 ZF SOT23
    Text: _ SEMICONDUCTOR TECHNICAL DATA KOREAELECTRONICSCO.,LTD. KDS226 SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. : SOT-23. : V f =0.9V Typ. . : trr=1.6ns(Typ.). : Cr=0.9pF (Typ.). DIM MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage


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    KDS226 OT-23. 100mA 01/zF SOT-23 ZF KDS226 MARKING ZF SOT-23 ZF SOT23 PDF

    PMBF5484

    Abstract: IEC134 PMBF5485 PMBF5486 URC169
    Text: Philips Semiconductors • bbSBTBl D02HQ41 0T3 HIAPX AMER P H ILI PS/ DIS CR ETE N-channel field-effect transistors PMBF5484; PMBF5485; PMBF5486 QUICK REFERENCE DATA FEATURES • Low noise SYMBOL • Interchangeability of drain and source connections VDs drain-source voltage


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    D02HQ41 PMBF5484; PMBF5485; PMBF5486 PMBF5484 PMBF5485 PMBF5484 IEC134 PMBF5485 PMBF5486 URC169 PDF

    ci 8602 gn

    Abstract: ci 8602 gn block diagram 12v dc cdi schematic diagram L146 IC 8602 gn Alc201A 12v dc cdi schematic diagram for cdi tk 1838 ir m6502 IR TK 1838
    Text: Schematic Diagrams System Block Diagram M400 System Block Diagram Sheet 1 of 41 System Block Diagram Schematic Diagrams Socket 478 1 of 2 <O>HD#[0 *3] VCC CORK COin r- cr> ;-v^ s> ^ ^ :>;> r - ^ > > s> ^ s> ^ S ’- ^ ^ !•> ^ ^ N ^ ^ ^ ^ ^ ^ ^ ^ ^ r » : >


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    C237D87N STS-05-A 71-M4000-D03) 10MIL STS-05-A ci 8602 gn ci 8602 gn block diagram 12v dc cdi schematic diagram L146 IC 8602 gn Alc201A 12v dc cdi schematic diagram for cdi tk 1838 ir m6502 IR TK 1838 PDF

    MMBTA56

    Abstract: MMBTA92 MMBTA93 NZT6726 NZT6728 NZT6729 PZTA92
    Text: This Surface Mount Transistors Material cr Copyrighted a In D b-1 t-1 LlJ a CD Discrete POWER & Signal Technologies National Semiconductor" Surface Mount Transistors PNP Medium Power jr □ Ln a -O Device No. SOT-23 Mark Case Style ^ CBO (V) Min V CEO V


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    OT-23 MMBTA56 O-236 P2TA56 O-261 MMBTA92 MMBTA93 MMBTA56 MMBTA92 MMBTA93 NZT6726 NZT6728 NZT6729 PZTA92 PDF

    Untitled

    Abstract: No abstract text available
    Text: This I Material cr Ln □ tr 1 b-J ÜJ Copyrighted a a $ Discrete POWER & Signal Nati onal [=1 □ Surface Mount Transistors NPN Darlington Transistors jr a Ln Technologies Semiconductor" Device No. SOT-23 Mirk Case Style VCBO V CEO V EBO By (V) Min (V)


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    OT-23 00M05D0 PDF

    MMBT3904

    Abstract: MMBT4401 MMPQ2222 MMPQ6502 NMT2222 PZT2222A MMBT3904 1A MARK SO SOT
    Text: This Surface Mount Transistors cr Material In a t-< fcH Copyrighted UJ a a a NPN Surface Mount General Purpose Amplifiers and Switches Device No. SOT-23 Mark MMBT4401 (2X) Case Style TO-236 (49) ^CBO ^CEO VffiO (V) (V) (V) Min Min Min 60 40 6 'cBO u Max


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    OT-23 MMBT4401 O-236 MMPQ2222 SO-16 MMPQ6502" NMT2222 7MMPQ6502" MMBT3904 MMBT4401 MMPQ2222 MMPQ6502 NMT2222 PZT2222A MMBT3904 1A MARK SO SOT PDF

    BF747

    Abstract: MBB400 DB64 transistor HJ 388
    Text: Philips Sem iconductors — bb53^31 00E4bfll l ? 5 N AMER P H IL IPS /D IS CR ET E MAPX b?E Product specification NPN 1 GHz wideband transistor FEATURES £ BF747 PINNING • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.


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    bb53-J31 00E4bà BF747 BF747 MBB400 DB64 transistor HJ 388 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC3120 NPN EPITAXIAL SIL IC O N T R A N SIST O R MIXER FOR UHF TV TUNER SOT-23 G c E = 1 7 d B T Y P Cr. = 0.6pF (TYP) ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


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    KSC3120 OT-23 PDF

    Mark T92

    Abstract: No abstract text available
    Text: This Pro Electron Series Material cr Ln CD b-1 b-1 ÜJ Pro Electron Surface Mount Bipolar Devices continued V *CES Device No. (SOT-23 Mark) a Copyrighted o □ -C a BSR14 (U8) Ln ID Case Style TO-236 (49) V 1 * ' ces ^C E O CBO (V) * *CBO (V) Min Min (nA)


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    OT-23 Mark T92 PDF