S29WS128N
Abstract: SA050 S29WS S29WS256N S29WS-N BAX55
Text: S29WS-N MirrorBitTM Flash Family S29WS256N, S29WS128N 256/128 Megabit 16/8 M x 16 bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory S29WS-N MirrorBitTM Flash Family Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion
|
Original
|
S29WS-N
S29WS256N,
S29WS128N
S29WS128N
SA050
S29WS
S29WS256N
BAX55
|
PDF
|
MPC8540
Abstract: DDR12 MPC8540CE DDR11 DDR10 CPU29 LBC11 0x81000100 PCIX30
Text: Freescale Semiconductor MPC8540CE Rev 0.3, 11/2004 Errata MPC8540 PowerQUICC III Device Errata This document details all known silicon errata for the MPC8540 PowerQUICC III device. It also includes errata for the e500 core. Table 1 provides a revision history for this document.
|
Original
|
MPC8540CE
MPC8540
TSEC18/FEC18.
DDR11,
DDR12,
MPC8540
DDR12
MPC8540CE
DDR11
DDR10
CPU29
LBC11
0x81000100
PCIX30
|
PDF
|
RLDRAM
Abstract: MT49H16M18C
Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization
|
Original
|
288Mb:
MT49H16M18C
09005aef80a41b59/Source:
09005aef811ba111
2003Micron
RLDRAM
MT49H16M18C
|
PDF
|
MT49H16M18C
Abstract: No abstract text available
Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization
|
Original
|
288Mb:
MT49H16M18C
09005aef80a41b59/Source:
09005aef811ba111
2003Micron
MT49H16M18C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Intel Xeon® Processor 7400 Series Specification Update December 2010 Reference Number: 320336-008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS
|
Original
|
maapplnots/317080
|
PDF
|
S29WS128N
Abstract: sample code read and write flash memory spansion S29WS064N S29WS256N S29WS-N S70WS512N00 TSB084 sample code write buffer spansion SA047-SA050
Text: S70WS512N00 Based MCPs Same-Die Stacked Multi-Chip Product MCP 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications
|
Original
|
S70WS512N00
S29WS128N
sample code read and write flash memory spansion
S29WS064N
S29WS256N
S29WS-N
TSB084
sample code write buffer spansion
SA047-SA050
|
PDF
|
MICRON BGA PART MARKING
Abstract: amd catalog MT49H32M18C
Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock
|
Original
|
576Mb:
MT49H32M18C
MT49H64M9C
09005aef80a41b59/Source:
09005aef811ba111
MICRON BGA PART MARKING
amd catalog
MT49H32M18C
|
PDF
|
TRANSISTOR BFW 11 pin diagram
Abstract: 064N S29WS064N S29WS128N S29WS256N WS128N pin diagram of TRANSISTOR BFW 11
Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst
|
Original
|
S29WSxxxN
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
S29WS256/128/064N
TRANSISTOR BFW 11 pin diagram
064N
S29WS064N
S29WS128N
S29WS256N
WS128N
pin diagram of TRANSISTOR BFW 11
|
PDF
|
SA047
Abstract: No abstract text available
Text: S29WS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-Only Simultaneous Read/Write, Burst-mode MirrorBit Flash Memory Data Sheet (Advance Information) S29WS064R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
|
Original
|
S29WS064R
16-bit)
S29WS064R
SA047
|
PDF
|
MT49H32M18C
Abstract: No abstract text available
Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock
|
Original
|
576Mb:
MT49H32M18C
MT49H64M9C
09005aef80a41b59/Source:
09005aef811ba111
MT49H32M18C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Am29BDS640G Data Sheet October 1, 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
Am29BDS640G
25903C1
25903C1
|
PDF
|
09005aef815b2df8
Abstract: MT49H32M18C
Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 19.2 Gb/s peak bandwidth (x18 at 533 MHz clock
|
Original
|
576Mb:
MT49H32M18C
MT49H64M9C
09005aef815b2df8/Source:
09005aef811ba111
09005aef815b2df8
MT49H32M18C
|
PDF
|
S29WS064R
Abstract: SA053 sa029 spansion top marking WS064R SA057 sa086 SA056 SA027
Text: S29WS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-Only Simultaneous Read/Write, Burst-mode MirrorBit Flash Memory Data Sheet (Advance Information) S29WS064R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
|
Original
|
S29WS064R
16-bit)
S29WS064R
SA053
sa029
spansion top marking
WS064R
SA057
sa086
SA056
SA027
|
PDF
|
FSC093
Abstract: No abstract text available
Text: Am42BDS640AG Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
|
Original
|
Am42BDS640AG
FSC093
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Am29BDS640G Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new designs, S29WS064K supersedes Am29BDS640G. Please refer to the S29WS-K family data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes
|
Original
|
Am29BDS640G
S29WS064K
S29WS-K
25903C2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Am29BDS320G Data Sheet October 1, 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
Am29BDS320G
27243B1
|
PDF
|
BA246
Abstract: BA139 BA257 ba153 BA242 BA207 ba137 BA138 diode BA142 BA249
Text: K8A2815ET B M FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary June 28, 2002 0.1 Revised - Change the "Programmable Wait State" settings in Burst Mode
|
Original
|
K8A2815ET
K8S28158
K8S2815E
000000H
64-Ball
BA246
BA139
BA257
ba153
BA242
BA207
ba137
BA138 diode
BA142
BA249
|
PDF
|
RLDRAM mt49h
Abstract: MT49H16M18C
Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization
|
Original
|
288Mb:
MT49H16M18C
09005aef80a41b59/Source:
09005aef811ba111
288Mb
RLDRAM mt49h
MT49H16M18C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Rev. 1.0, Nov. 2010 K8A2815ET B E 128Mb E-die NOR FLASH 8M x16, Sync Burst, Page Mode, Multi Bank 1.7V to 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K8A2815ET
128Mb
070000h-077FFFh
068000h-06FFFFh
060000h-067FFFh
058000h-05FFFFh
050000h-057FFFh
048000h-04FFFFh
040000h-047FFFh
038000h-03FFFFh
|
PDF
|
MICRON BGA PART MARKING
Abstract: MT49H16M36
Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate
|
Original
|
576Mb:
MT49H64M9
MT49H32M18
MT49H16M36
09005aef80a41b46/Source:
09005aef809f284b
MICRON BGA PART MARKING
MT49H16M36
|
PDF
|
MT49H16M18C
Abstract: No abstract text available
Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization
|
Original
|
288Mb:
MT49H16M18C
09005aef815b2df8/Source:
09005aef811ba111
2003Micron
MT49H16M18C
|
PDF
|
IS49RL18320
Abstract: No abstract text available
Text: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 IS49RL18320– 2 Meg x 18 x 16 Banks IS49RL36160– 1 Meg x 36 x 16 Banks Features • 1066 MHz DDR operation 2133 Mb/s/ball data rate • 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock frequency) • Organization
|
Original
|
576Mb:
IS49RL18320
IS49RL36160
168-ball
-107E,
IS49RL18320
|
PDF
|
Spansion NAND Flash DIE
Abstract: Spansion NAND Flash S29WS064N S29WS128N S29WS256N S75WS256NDF S75WS-N sa69256 sample code read and write flash memory spansion
Text: S75WS256Nxx Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M x 16-Bit) CellularRAM and 512 Mb (32M x 16-bit) Data Storage Data Sheet PRELIMINARY Notice to Readers: This document states the current technical specifications
|
Original
|
S75WS256Nxx
16-bit)
S75WS-N-00
S75WS-N-00
Spansion NAND Flash DIE
Spansion NAND Flash
S29WS064N
S29WS128N
S29WS256N
S75WS256NDF
S75WS-N
sa69256
sample code read and write flash memory spansion
|
PDF
|
MPC8240
Abstract: MPC824
Text: Advance Information MPC8240CE/D Rev. 3.0, 1/2002 MPC8240 RISC Microprocessor Chip Errata This document details all known silicon errata for the MPC8240 and its derivatives. Table 1 provides a revision history for this chip errata document. Table 1. Document Revision History
|
Original
|
MPC8240CE/D
MPC8240
MPC8240
0x00810101
0x00810101ify
MPC824
|
PDF
|
