CSB649 |
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Continental Device India
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20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60 - 320 hFE. |
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Original |
PDF
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CSB649 |
|
Continental Device India
|
Plastic Power Transistor |
|
Original |
PDF
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CSB649A |
|
Continental Device India
|
20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 200 hFE. |
|
Original |
PDF
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CSB649A |
|
Continental Device India
|
Plastic Power Transistor |
|
Original |
PDF
|
CSB649AB |
|
Continental Device India
|
20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE. |
|
Original |
PDF
|
CSB649AC |
|
Continental Device India
|
20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 100 - 200 hFE. |
|
Original |
PDF
|
CSB649B |
|
Continental Device India
|
20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60 - 120 hFE. |
|
Original |
PDF
|
CSB649C |
|
Continental Device India
|
20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 100 - 200 hFE. |
|
Original |
PDF
|
CSB649D |
|
Continental Device India
|
20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 160 - 320 hFE. |
|
Original |
PDF
|