C8000H
Abstract: No abstract text available
Text: ADVANCE‡ 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks
|
Original
|
32K-word
110ns
MT28F160A3
46-Ball
MT28F160A3
C8000H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:
|
Original
|
32K-word
110ns
MT28F160A3
46-Pin
MT28F160A3
|
PDF
|
MT28F160A3
Abstract: No abstract text available
Text: ADVANCE‡ 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks
|
Original
|
MT28F160A3
32K-word
110ns
46-Ball
MT28F160A3
|
PDF
|
FW310
Abstract: FW311 fy310 FX312 FX310
Text: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:
|
Original
|
32K-word
110ns
MT28F160A3
46-Pin
MT28F160A3
FW310
FW311
fy310
FX312
FX310
|
PDF
|
MT28F160A3
Abstract: FW310 FW311
Text: ADVANCE 1 MEG x 16 ENHANCED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160A3 Low Voltage, Extended Temperature FEATURES • Thirty-nine erase blocks: Two 4K-word boot blocks protected Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages:
|
Original
|
MT28F160A3
32K-word
110ns
46-Pin
MT28F160A3
FW310
FW311
|
PDF
|
fw610
Abstract: CSM 8A Code TRS-150 sample code read the flash memory manufacture id MT28F160C3 MARK SR1
Text: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT Top View 46-Ball FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks
|
Original
|
MT28F160C3
46-Ball
32K-word
110ns
128-bit
MT28F160C3
fw610
CSM 8A Code
TRS-150
sample code read the flash memory manufacture id
MARK SR1
|
PDF
|
working and block diagram of ups
Abstract: CSM 8A Code
Text: ADVANCE 1 MEG x 16 DUAL BANK BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F162A3 Low Voltage, Extended Temperature FEATURES 48-Pin FBGA • Thirty-nine erase blocks: Bank a 4Mb for data storage - Two 4K-word boot blocks (protected) - Six 4K-word parameter blocks
|
Original
|
MT28F162A3
48-Pin
32K-word
110ns
MT28F162A3
working and block diagram of ups
CSM 8A Code
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa
|
Original
|
100ns/110ns
100ns
MT28F322D18FH
|
PDF
|
FY536
Abstract: FW537
Text: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa
|
Original
|
100ns/110ns
100ns
MT28F322D18FH
FY536
FW537
|
PDF
|
FY422
Abstract: micron sram MT28C3214P2FL FW431 FY437 FX431
Text: ADVANCE‡ 2 MEG x 16 PAGE FLASH 256K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3214P2FL Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture • Support for true concurrent operations with no
|
Original
|
MT28C3214P2FL
66-Ball
32K-word
256K-words
MT28C3214P2FL
FY422
micron sram
FW431
FY437
FX431
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 2 MEG x 16 PAGE FLASH 256K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3214P2FL Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture • Support for true concurrent operations with no
|
Original
|
MT28C3214P2FL
66-Ball
32K-word
256K-words
MT28C3214P2FL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT Top View 46-Ball FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks
|
Original
|
32K-word
110ns
128-bit
MT28F160C3
46-Ball
MT28F160C3
|
PDF
|
fw610
Abstract: No abstract text available
Text: ADVANCE 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View 46-Pin FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks
|
Original
|
32K-word
110ns
128-bit
MT28F160C3
46-Pin
MT28F160C3
fw610
|
PDF
|
FX615
Abstract: C8000H MT28F160C34 micron flash otp
Text: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C34 FEATURES • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages: 3.3V ±5% VCC 3.3V ±5% VCCQ 1.65V–3.465V and 12V VPP
|
Original
|
MT28F160C34
32K-word
128-bit
46-Ball
MT28F160C34
FX615
C8000H
micron flash otp
|
PDF
|
|
|
CSM5B
Abstract: AD10 AD11 AD12 AD14 FW111 FX111
Text: ADVANCE 1 MEG x 16 MULTIPLEXED BURST FLASH MEMORY FLASH MEMORY MT28F162M3 Low Voltage FEATURES PIN ASSIGNMENT Top View 40-Pin FBGA • Thirty-nine erase blocks: Bank a (4Mb for data storage) - Two 4K-word boot blocks (protected) - Six 4K-word parameter blocks
|
Original
|
MT28F162M3
40-Pin
32K-word
120ns
MT28F162M3
CSM5B
AD10
AD11
AD12
AD14
FW111
FX111
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa
|
Original
|
MT28F322D18FH
58-Ball
100ns/110ns
Burs625
MT28F322D18FH
|
PDF
|
17FFFh
Abstract: No abstract text available
Text: ADVANCE 1 MEG x 16 MULTIPLEXED BURST FLASH MEMORY FLASH MEMORY MT28F162M3 Low Voltage FEATURES 40-Pin FBGA • Thirty-nine erase blocks: Bank a 4Mb for data storage - Two 4K-word boot blocks (protected) - Six 4K-word parameter blocks - Seven 32K-word main memory blocks
|
Original
|
32K-word
120ns
MT28F162M3
17FFFh
|
PDF
|
Multibus ii protocol
Abstract: solna d30 176526 multibus II architecture specification
Text: V L S I Tech n o lo gy , in c . _ VM82C389 MESSAGE-PASSING COPROCESSOR MULTIBUS II FEATURES DESCRIPTION • Full-function, single-chip interface to Parallel System Bus PSB The VM82C389 Message-Passing Coprocessor (MPC) provides a highintegration interface solution for the
|
OCR Scan
|
VM82C389
MIL-STD-883C
VM82C389
Multibus ii protocol
solna d30
176526
multibus II architecture specification
|
PDF
|
82C389
Abstract: No abstract text available
Text: V LSI Technology, in c VM82C389 MESSAGE-PASSING COPROCESSOR MULTIBUS II FEATURES DESCRIPTION • Full-function, single-chip interface to Parallel System Bus PSB The VM82C389 Message-Passing Coprocessor (MPC) provides a highintegration interface solution for the
|
OCR Scan
|
VM82C389
VM82C389
82C389
|
PDF
|
LTS23305
Abstract: HP 5082-7653 LTD-585G CSS-517Y LTD482RC CSM-57442E HDSP-3403 MAN3920A LTS-4540-AG tdso 5160 k
Text: Cross Reference For detailed comparison, please always refer to m anufacture r's specs Manufacturer Part Number CSC P/N A B C HP 50 82 -761 0 CSS-3126-11 X X X HP 5 0 8 2-7 6 1 1 CSS-31 2E 1 1 X X X D j 0.30 F" C f ’t ‘ G " C p N •- 0 .3 0 r~ 'i j N
|
OCR Scan
|
CSS-3126-11
CSS-31
CSS-313E-11
CSS-312Y-11
CSS-310Y-11
CSS-416E-11
CSS-561
CSS-5614D
TLUR355S
LTS23305
HP 5082-7653
LTD-585G
CSS-517Y
LTD482RC
CSM-57442E
HDSP-3403
MAN3920A
LTS-4540-AG
tdso 5160 k
|
PDF
|
BA021
Abstract: MPC32389 IEEE-1296 82389 ba021p 290145 BAD22 176526
Text: in tj 82389 MESSAGE PASSING COPROCESSOR A MULTIBUS II BUS INTERFACE CONTROLLER • Highly Integrated VLSI Device — Single-Chip Interface for the Parallel System Bus IEEE 1296 — Interrupt Handling/Bus Arbitration Functions — Dual-Buffer Input and Output DMA
|
OCR Scan
|
32-Byte
32-Bit
CSM/002
BA021
MPC32389
IEEE-1296
82389
ba021p
290145
BAD22
176526
|
PDF
|
D403 power transistor
Abstract: D403 transistor TRANSISTOR D403 D403 A 2SB1344 100V 2A MPT3 2SD2025 D403 SC-75A 2305 transistor
Text: 2SB1344 2SD2025 Transistors I Power Transistor —100V, —8A 2SB1344 •A b s o lu te maximum ratings (Ta—25‘C ) •F e a tu re s 1) 2) 3) 4) Darlington connection fo r high D C current gain. Built-in resistor between base and emitter. Built-in dam per diode.
|
OCR Scan
|
2SB1344
2SD2025
2SB1344
2SD2025.
300kQ
100ms
O-220FP
O-220
O-126
O-220,
D403 power transistor
D403 transistor
TRANSISTOR D403
D403 A
100V 2A MPT3
2SD2025
D403
SC-75A
2305 transistor
|
PDF
|
IEEE-1296
Abstract: BA017 BA011 271091 M82389 D1301S Multibus ii protocol 176526 BA022 BAD29
Text: in te i M82389 MESSAGE PASSING COPROCESSOR A MULTIBUS II BUS INTERFACE CONTROLLER M ilita ry Highly Integrated VLSI Device — Single-Chip Interface for the Parallel System Bus — Interrupt Handling/Bus Arbitration Functions — Dual-Buffer Input and Output DMA
|
OCR Scan
|
M82389
32-Byte
32-Bit
M82389
IEEE-1296
BA017
BA011
271091
D1301S
Multibus ii protocol
176526
BA022
BAD29
|
PDF
|
