Untitled
Abstract: No abstract text available
Text: SN55ALS192, SN75ALS192 QUADRUPLE DIFFERENTIAL LINE DRIVERS SLLS007C - JULY 1985 - REVISED MAY 1995 Meets or Exceeds the Requirements of ANSI Standard EIA/TIA-422-B and ITU Recommendation V.11 SN55ALS192. . . J OR W PACKAGE SN75ALS19 2 . D OR N PACKAGE TOP VIEW
|
OCR Scan
|
PDF
|
SN55ALS192,
SN75ALS192
SLLS007C
EIA/TIA-422-B
AM26LS31
SN55ALS192.
SN75ALS19
SN55ALS192
|
Untitled
Abstract: No abstract text available
Text: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte
|
OCR Scan
|
PDF
|
TMS28F040
304-BIT
SMJS040-DECEMBER
A0-A18
32-pin
40-pin
|
MC3453
Abstract: No abstract text available
Text: MC3453, MC3553 QUAD LINE DRIVERS WITH COMMON ENABLE SLLS119 A -D 3 00 0, FE B R U A R Y 1986 - REVISED F E B R U A R Y 1993 Similar to a Dual Version of SN55/75110A Line Driver D, J, OR N . . . PACKAGE TOP VIEW Improved Stability Over Supply Voltage and
|
OCR Scan
|
PDF
|
MC3453,
MC3553
SLLS119
SN55/75110A
MC3453
I0322
D3000.
|
MIL-STD-463
Abstract: LM136-2.5
Text: LT1009, LT1009Y 2.5-V INTEGRATED REFERENCE CIRCUITS SLVS013E - MAY 1987 - REVISED AUGUST 1995 • • • • • • Excellent Temperature Stability Initial Tolerance. . . 0.2% Max
|
OCR Scan
|
PDF
|
LT1009,
LT1009Y
SLVS013E
LM136
LT1009
LT1009
MIL-STD-463
LM136-2.5
|
Untitled
Abstract: No abstract text available
Text: TMS29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040
|
OCR Scan
|
PDF
|
SMJS820B
TMS29F040
29LF040/
29VF040
SMJS825)
A18A17
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor M SC23432A-XXBS8/PS8 4,194,304-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23432A-xxBS8/DS8 is a fully decoded 4,194,304-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 16-Mb DRAMs 4M x 4 in SOJ packages
|
OCR Scan
|
PDF
|
MSC23432A-XXBS8/PS8
304-Word
32-Bit
MSC23432A-xxBS8/DS8
16-Mb
72-pin
|
DS2176
Abstract: DS2176IND DS2176Q DS2180A
Text: DA L L A S S E M I C O N D U C T O R C O R P CHE D | Et.14130 GODSflflS 4 | Dallas Sem iconductor T-~i£-n-3i T 1 R e c e i ve B u ffe r FEATURES Synchronizes loop-timed and systemtimed T1 data streams Two-frame buffer depth; slips occur on frame boundaries
|
OCR Scan
|
PDF
|
Sbl4130
DS2176
DS2180A
T-75-Ã
1413G
T-75-11-37
DS2176Q
DS2176
DS2176IND
DS2176Q
|
PMI-OP07
Abstract: pmi op07 OP07D OPERATIONAL AMPLIFIERS PMI APPLICATIONS OP07CP pmi op07CP OP07 pmi OP07CP PMI OP07 OP07C
Text: OP07C, OP07D, OP07Y LOW-OFFSET VOLTAGE OPERATIONAL AMPLIFIERS _ S LO S Q 9 9A -O C T O B E R 1983 - REVISED SEPTEM BER 1991 Low Noise No External Components Required Replaces Chopper Amplifiers at a Lower Cost D OR P PACKAGE TOP VIEW
|
OCR Scan
|
PDF
|
OP07C,
OP07D,
OP07Y
SLOSQ99A-OCTOBER
jiA714
OP07C
QP07D
PMI-OP07
pmi op07
OP07D
OPERATIONAL AMPLIFIERS PMI
APPLICATIONS OP07CP
pmi op07CP
OP07 pmi
OP07CP PMI
OP07
|
tcnl 100
Abstract: EP1210 CPT210 cpt21
Text: EP1210 r î n A CD D V CPT210 A FEATURES GENERAL DESCRIPTION High Density over 1200 gates) replacem ent for T T L and 74HC. Advanced C H M O S E P R O M technology allow s for erasability and reprogram mability. Low power: 15 mW typical standby power dissipation.
|
OCR Scan
|
PDF
|
EP1210
CPT210
EP1210
tcnl 100
CPT210
cpt21
|
UPT 12 R
Abstract: S193
Text: SN74ALS193 SN54ALS193 SYNCHRONOUS 4-BIT UP/DOWN COUNTERS DUAL CLOCK WITH CLEAR D 2 6 6 1 , D E C E M B E R 1982 - R E V IS E D M A Y 19 86 Look-Ahead Circuitry Enhances Cascaded Counters Fully Synchronous in Count Modes SN 54A S193. . . J PACKAGE SN74ALS193 . . . 0 OR N PACKAGE
|
OCR Scan
|
PDF
|
SN74ALS193
SN54ALS193
300-m
SN74ALS193
ALS193
SN74ALS193,
UPT 12 R
S193
|
Untitled
Abstract: No abstract text available
Text: in te l 3207A QUAD BIPOLAR-TO-MOS LEVEL SHIFTER AND DRIVER • High Speed, 45 nsec Max. — Delay + Transition Time Over Temperature with 200 pF Load ■ TTL and DTL Compatible Inputs ■ 1103 and 1103A Memory Compatible at Output ■ Simplifies Design — Replaces
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for
|
OCR Scan
|
PDF
|
HYM581600
HY5116100
HYM581600M/LM/TM/LTM
HYM581600TM/LTM
1BD01-00-MAY93
HYM581600M
HYM581600LM
HYM581600TM
|
Untitled
Abstract: No abstract text available
Text: intei 21019 1,048,576 x 9-BIT DYNAMIC RAM MEMORY MODULE WITH PAGE MODE 21019-06 21019-07 21019-08 21019-10 Units Acces Time from RAS tRAc 60 70 80 100 ns Access Time from CAS (tcAc) 20 20 20 25 ns Read Cycle Time (tpc) 125 140 160 190 ns 1,048,576 x 9-Bit Organization
|
OCR Scan
|
PDF
|
30-Pin
|
HY514460
Abstract: No abstract text available
Text: •HYUNDAI HY514460 Series SEMICONDUCTOR 256 Kx164 R C MO S DRAM with 2 C A S & W P B PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
|
OCR Scan
|
PDF
|
HY514460
Kx164
16-bit
400mil
40pin
40/44pin
1AC12-00-APR93
DDQ1553
|
|
|
FAIU
Abstract: No abstract text available
Text: in te T 89024 2400 BPS INTELLIGENT MODEM CHIP SET • Easily Customized Command Set and Features ■ For Public Switched Telephone Network and Unconditioned Leased Lines Applications ■ Two Chip Intelligent Modem Solution with Minimal External Components
|
OCR Scan
|
PDF
|
600fl
FAIU
|
Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y SEMICONDUCTOR 514100A S e rie s 4M x 1-bit CMOS DRAM DESCRIPTION The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HV514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
|
OCR Scan
|
PDF
|
14100A
HY514100A
HV514100A
1AC06-20-APR93
4b75DÃ
HY514100AJ
HY514100AU
HY514100AT
|
Untitled
Abstract: No abstract text available
Text: 3.3 VOLT CMOS CLOCKED FIFO WITH BUS-MATCHING AND BYTE SWAPPING 64 x 36 • Passive parity checking on each Port • Parity Generation can be selected for each Port • Available in 132-pin plastic quad flat package PQF , or space saving 120-pin thin quad flat package (TQFP)
|
OCR Scan
|
PDF
|
132-pin
120-pin
IDT723613
IDT72V3613
83MHz
com/docs/PSC4036
com/docs/PSC4021
|
Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532100A Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each DRAM.
|
OCR Scan
|
PDF
|
HYM532100A
32-bit
HY514400A
22/iF
HYM5321OOAM/ALM
HYM532100AMG/ALMG
1CC03-00-M
|
Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.
|
OCR Scan
|
PDF
|
HYM532100A
32-blt
32-bit
HY514400A
HYM532100AM/ALM
HYM532100AMG/ALMG
M532100A
1CC03-01-FEB94
4b75DBB
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor M S C 2 3 8 3 7 A - x x B S 1 8 / D S 1 8 8,388,608-Word x 36-Bit DRAM M O DU LE : FAST PAGE M O DE TYPE D E S C R IP T IO N The OKI MSC23837A-xxBS18/DS18 is a fully decoded 8,388,608-word x 36-bit CMOS Dynamic Random Access M emory M odule com posed of eighteen 16-Mb DRAMs 4M x 4 in SOJ packages
|
OCR Scan
|
PDF
|
MSC23837A-XXBS18/DS18
608-Word
36-Bit
MSC23837A-xxBS18/DS18
16-Mb
72-pin
|
quad port ram
Abstract: DS2015 32-PIN D062 DS1206 DS2011 DS2012 DS2012R
Text: DALLAS SEMICONDUCTOR CORP OTE D | S b m i 3 G 0DDE12b 0 I T '^ 6 '3 5 & Dallas Semiconductor 4 096x9 FIFO PRELIMINARY : DS2012 28-Pin DIP DS2012R 32-Pin PLCC a“ FEATURES PIN CONNECTIONS • First-in, first-out memory based architecture • Flexible 4096 x 9 organization
|
OCR Scan
|
PDF
|
4096x9
DS2012
28-Pin
DS2012R
32-Pin
T-46-35
0DQ2137
DS2015
quad port ram
DS2015
D062
DS1206
DS2011
|
RS-422A
Abstract: SN65ALS176 SN75ALS176 SN75ALS176A SN75ALS176B
Text: SN65ALS176, SN75ALS176, SN75ALS176A, SN75ALS176B DIFFERENTIAL BUS TRANSCEIVERS S L L S 0 4 0 D -D 3 0 4 2 . A U G U S T 1987 - RE V IS E D AU G U S T 1991 Meets EIA Standards RS-422A and RS-485 and CCITT Recommendations V.11 and X.27 D OR P PACKAGE TOP VIEW
|
OCR Scan
|
PDF
|
SN65ALS176,
SN75ALS176,
SN75ALS176A,
SN75ALS176B
SLLS040D-D3042,
RS-422A
RS-485
SN65ALS176
ALS176.
ALS176A.
SN75ALS176
SN75ALS176A
SN75ALS176B
|
Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23T/P1720C-XXBS18 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION T he O K I M SC23T/D 1720C-xxBS18 is a fu lly decoded 1,048,576-w o rd x 72-bit C M O S D yn am ic R an d o m A ccess M e m o ry M o d u le com posed o f eighteen 4-Mb D R A M s 1 M x 4 in T S O P o r S O J
|
OCR Scan
|
PDF
|
MSC23T/P1720C-XXBS18
576-Word
72-Bit
MSC23T/D1720C-xxBS18
168-pin
72-bit
MSC23T1720C-xxBS18
MSC23D1720C-xxBS18
|
Untitled
Abstract: No abstract text available
Text: LT1180A/LT1181A L iim TECHNOLOGY Low Power 5V RS232 Dual Driver/Receiver with O.IjllF Capacitors F€flTUR€S DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1180A/LT1181A are dual RS232 driver/receiver pairs with integral charge pump to generate RS232 volt
|
OCR Scan
|
PDF
|
LT1180A/LT1181A
RS232
180A/LT1181A
RS232
LT1180A/LT1181
LT1280A/LT1281A
|
