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    CURRENT CUT OFF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    CURRENT CUT OFF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN2627

    Abstract: DR73-4R7 ST8R00 ST8R00W GRM31CR61E106KA12B
    Text: AN2627 Application note ST8R00 syncronous boost converter with output current cut-off function Introduction The ST8R00 family of synchronous step-up DC-DC converters with current output cut-off function provide up to 1 A over an input voltage range of 4 V to 6 V and an output voltage


    Original     		PDF AN2627 ST8R00 ST8R00) ST8R00W) ST8R00and AN2627 DR73-4R7 ST8R00W GRM31CR61E106KA12B

    GRM31CR61E106KA12B

    Abstract: AN2627 ST8R00 ST8R00W DR73-4R7
    Text: AN2627 Application note ST8R00 syncronous boost converter with output current cut-off function Introduction The ST8R00 family of synchronous step-up DC-DC converters with current output cut-off function provide up to 1 A over an input voltage range of 4 V to 6 V and an output voltage


    Original     		PDF AN2627 ST8R00 ST8R00) ST8R00W) ST8R00y GRM31CR61E106KA12B AN2627 ST8R00W DR73-4R7

    CGR18650CG

    Abstract: Panasonic CGR18650CG CGR18650C CGR18650 110mA 250mah panasonic lithium battery cell 3.6V
    Text: PSS series CGR18650CG • Dimensions ■ Typical discharge characteristics （mm） Max. 18.6 5.0 CHARGE CONDITION :CVCC 4.2V MAX.0.7It 1500mA , 110mA cut-off at 25deg.C DISCHARGE CONDITION : CONSTANT CURRENT , 3.0V cut-off at 25deg.C VOLTAGE [V] 4.5 （＋）


    Original     		PDF CGR18650CG 1500mA) 110mA 25deg 4300mA) 2150mA) 430mA) CGR18650CG Panasonic CGR18650CG CGR18650C CGR18650 250mah panasonic lithium battery cell 3.6V

    panasonic 2m236

    Abstract: 2M236 A.E.B 375 60nm panasonic relay
    Text: EB AEB COMPACT BUT CUT OFF DC POWER CURRENT, POWER CAPSULE CONTACT RELAY (100A type) EB RELAYS (AEB) FEATURES TYPICAL APPLICATIONS • Compact and high capacity using double contacts in series and permanent magnet installed. (1,000A/3 times) cut-off possible


    Original     		PDF 00A/3 ASCTB232E 201201-T panasonic 2m236 2M236 A.E.B 375 60nm panasonic relay

    2M236

    Abstract: A.E.B 375 61216 AEB310012 panasonic 2m236 100A relay relay 12v 100A AEB310024 AEB310036 AT20C
    Text: AEB EB COMPACT BUT CUT OFF DC POWER CURRENT, POWER CAPSULE CONTACT RELAY (100A type) EB RELAYS (AEB) FEATURES TYPICAL APPLICATIONS • Compact and high capacity using double contacts in series and permanent magnet installed. (1,000A/3 times) cut-off possible


    Original     		PDF 00A/3 310710J 2M236 A.E.B 375 61216 AEB310012 panasonic 2m236 100A relay relay 12v 100A AEB310024 AEB310036 AT20C

    A3179

    Abstract: A3179-01 C1103-04 G5853-103 G5853-11 G5853-13 G8373-01 G8373-03 G8423-03 G8423-05
    Text: InGaAs PIN photodiodes G8423/G8373/G5853 series Long wavelength type Cut-off wavelength: 2.55 to 2.6 —m Features Applications Cut-off wavelength: 2.55 to 2.6 —m Gas analysis 3-pin TO-18 package: low price Spectrophotometer Thermoelectrically cooled TO-8 package: low dark current


    Original     		PDF G8423/G8373/G5853 A3179 A3179-01 C1103-04 G8423-03 G8423-05 G8373-01 G8373-03 G5853-103 G5853-11 A3179 A3179-01 C1103-04 G5853-103 G5853-11 G5853-13 G8373-01 G8373-03 G8423-03 G8423-05

    InGaAs PIN photodiode Long Wavelength 2.6

    Abstract: No abstract text available
    Text: InGaAs PIN photodiodes G8423/G8373/G5853 series Long wavelength type Cut-off wavelength: 2.55 to 2.6 —m Features Applications Cut-off wavelength: 2.55 to 2.6 —m Gas analysis 3-pin TO-18 package: low price Spectrophotometer Thermoelectrically cooled TO-8 package: low dark current


    Original     		PDF G8423/G8373/G5853 C4159-03 A3179 A3179-01 C1103-04 G8423-03 G8423-05 G8373-01 G8373-03 G5853-103 InGaAs PIN photodiode Long Wavelength 2.6

    2SC184

    Abstract: No abstract text available
    Text: Transistors 2SC184 USHA INDIA LTD ELECTRICAL CHARACTERISTICS (Ta=25°C) Characteristic Symbol Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain


    OCR Scan     		PDF 2SC184 2SC184

    2sc945

    Abstract: 30-LC USHA
    Text: Transistors 2SC945 USHA INDIA LTD ELECTRICAL CHARACTERISTICS (Ta=25°C) Characteristic Symbol Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain


    OCR Scan     		PDF 2SC945 350pA 100fiA 2sc945 30-LC USHA

    ic 748

    Abstract: 2SC4688
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage


    OCR Scan     		PDF 2SC4688 ic 748 2SC4688

    S1375

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE S1375 ELECTRICAL CHARACTERISTICS Ta=25°C CHARACTERISTIC SYMBOL Collector Cut-off Current ÏCB0 lEBO Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage v (BR)CE0 MIN.


    OCR Scan     		PDF S1375 150mA 500mA 500mA, S1375

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TY P E 2SC4253 Weight ELECTRICAL CHARACTERISTICS Ta=25°C CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Saturation Voltage SYMBOL TYP. MAX. UNIT - - 0.1 (JA


    OCR Scan     		PDF 2SC4253 30MHz

    GOC 63

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4248 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4248 TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage SYMBOL TEST CONDITION


    OCR Scan     		PDF 2SC4248 1000MHz --10V, 30MHz GOC 63

    2SC2347

    Abstract: r1il
    Text: TOSHIBA 2SC2347 TOSHIBA TRANSISTOR n MT SILICON NPN EPITAXIAL PLANAR TYPE f ? 3M T 7« TV UHF OSCILLATOR APPLICATIONS. CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Transition Frequency


    OCR Scan     		PDF 2SC2347 30MHz 2SC2347 r1il

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3665 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 7<;r Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage


    OCR Scan     		PDF 2SC3665 100mA 500mA, 500mA

    Wf vqb

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4247 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ?<;r Ù.1 WÊÊÊF ù.1 • « TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage


    OCR Scan     		PDF 2SC4247 1000MHz --10V, 30MHz Wf vqb

    2-7D101A

    Abstract: 2SA1425 2SC3665
    Text: 2SA1425 TO SH IBA 2 S A 1 425 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Colleetor-Emitter Breakdown Voltage


    OCR Scan     		PDF 2SA1425 VCB----120V, --10mA, 100mA --500mA, --50mA --500mA 100mA 2-7D101A 2SA1425 2SC3665

    U2550

    Abstract: 2sd122
    Text: TOSHIBA 2SD1220 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 SD12 2 0 POWER AMPLIFIER APPLICATIONS. U nit in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current !CBO E m itter Cut-off Current ÏEBO Collector-Emitter Breakdown


    OCR Scan     		PDF 2SD1220 200mA 500mA, U2550 2sd122

    BCX70GR

    Abstract: No abstract text available
    Text: BCX70 ELECTRICAL CHARACTERISTICS at Tamb= 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage V (BR)CEO 45 V Emitter-Base Breakdown Voltage V(BR)EBO 5 V Collector-Emitter Cut-off Current Emitter-Base Cut-Off Current Base-Emitter


    OCR Scan     		PDF BCX70 125mA BCX71 BCX70G BCX70H BCX70GR

    2sc2349

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2349 TOSHIBA TRANSISTOR TV VHF OSCILLATOR APPLICATIONS. CHARACTERISTIC SILICON NPN EPITAXIAL PLANAR TYPE 2SC2349 SYMBOL TEST CONDITION U nit in mm MIN. TYP. MAX. UNIT Collector Cut-off Current ÏCBO V c b = 15V, IE = 0 — — 0.1 Em itter Cut-off Current


    OCR Scan     		PDF 2SC2349 w5-09 2sc2349

    Untitled

    Abstract: No abstract text available
    Text: 2SC5154 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS H f R1 5 d WÊF wmr • H r POWER AMPLIFIER APPLICATIONS U n it in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown


    OCR Scan     		PDF 2SC5154 100mA 500mA, 500mA

    Untitled

    Abstract: No abstract text available
    Text: J Q J SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. U n it in mm SYMBOL CHARACTERISTIC TEST CONDITION Collector Cut-off Current VCb = -1 2 0 V , IE =0 *CBO Em itter Cut-off Current lEBO V e b = ~ 5V> ÏC ^ 0 DC Current Gain Vc e = —10V, I q = —500mA


    OCR Scan     		PDF --10V, --500mA --500mA, --50mA -500m

    Untitled

    Abstract: No abstract text available
    Text: 2SA1425 TO SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS i <; a 1 á i s mm m m • ■ v POWER AMPLIFIER APPLICATIONS. Unit in mm SYMBOL TEST CONDITION CHARACTERISTIC Collector Cut-off Current xCBO V C B =-120V , IE = 0 Emitter Cut-off Current


    OCR Scan     		PDF 2SA1425 -120V --10mA, --100mA --500mA, --50mA -500m -100m

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5445 TO SH IB A TRA N SISTO R SILICON NPN TRIPLE D IFFU SED M ESA TYPE 2SC5445 H O RIZO N TAL D EFLECTIO N O U TPU T FO R SUPER HIGH RESO LU TIO N CHARACTERISTIC SYMBOL Collector Cut-off Current !CBO Emitter Cut-off Current Ie b o Colleetor-Emitter Breakdown


    OCR Scan     		PDF 2SC5445