Q185
Abstract: BA6110 BA6110FS
Text: BA6110FS Standard ICs !Internal circuit configuration 11 12 Buffer IN Positive input 1 D1 D2 Current mirror 4 15 Current mirror (3) Current mirror (1) Current mirror (2) OUT Q13 R4 VCC R5 14 Buffer OUT Q14 Q17 Negative input 3 Q18 5 Input bias Q6 Q5 Q3 Q1
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BA6110FS
Q185
BA6110
BA6110FS
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mosfet current mirror
Abstract: No abstract text available
Text: NILMS4501N Power MOSFET with Current Mirror FET 24 V, 9.5 A, N−Channel, ESD Protected, 1:250 Current Mirror, SO−8 Leadless N−Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit
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NILMS4501N
NILMS4501N/D
mosfet current mirror
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Untitled
Abstract: No abstract text available
Text: NILMS4501N Power MOSFET with Current Mirror FET 24 V, 9.5 A, N−Channel, ESD Protected, 1:250 Current Mirror, SO−8 Leadless N−Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit
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NILMS4501N
NILMS4501N/D
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Untitled
Abstract: No abstract text available
Text: NILMS4501N Power MOSFET with Current Mirror FET 24 V, 9.5 A, N−Channel, ESD Protected, 1:250 Current Mirror, SO−8 Leadless N−Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit
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NILMS4501N
NILMS4501N/D
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Untitled
Abstract: No abstract text available
Text: NILMS4501N Power MOSFET with Current Mirror FET 24 V, 9.5 A, N-Channel, ESD Protected, 1:250 Current Mirror, SO-8 Leadless N-Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit
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NILMS4501N
NILMS4501N/D
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mosfet marking code 40
Abstract: Current Mirror FET
Text: NILMS4501N Advance Information Power MOSFET with Current Mirror FET 24 V, 9.5 A, N−Channel, ESD Protected, 1:250 Current Mirror, SO−8 Leadless N−Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit
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NILMS4501N
NILMS4501N/D
mosfet marking code 40
Current Mirror FET
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AN569
Abstract: NILMS4501N NILMS4501NR2 NILMS4501NR2G 4501N
Text: NILMS4501N Power MOSFET with Current Mirror FET 24 V, 9.5 A, N−Channel, ESD Protected, 1:250 Current Mirror, SO−8 Leadless http://onsemi.com N−Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit
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NILMS4501N
NILMS4501N/D
AN569
NILMS4501N
NILMS4501NR2
NILMS4501NR2G
4501N
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Untitled
Abstract: No abstract text available
Text: NILMS4501N Power MOSFET with Current Mirror FET 24 V, 9.5 A, N−Channel, ESD Protected, 1:250 Current Mirror, SO−8 Leadless http://onsemi.com N−Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit
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NILMS4501N
NILMS4501N/D
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Untitled
Abstract: No abstract text available
Text: DS3922 High-Speed Current Mirror and Integrated FETs for DC-DC Controller General Description The DS3922 high-speed current mirror integrates highvoltage devices necessary for monitoring the burst mode receive power signal in avalanche photodiode APD biasing and OLT applications. The device has two small and
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DS3922
DS3922
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Untitled
Abstract: No abstract text available
Text: Precision Wide Range 3 nA to 3 mA High-Side Current Mirror ADL5315 FEATURES Accurately mirrors input current (1:1 ratio) over 6 decades Linearity 1% from 3 nA to 3 mA Stable mirror input voltage Voltage held 1 V below supply using internal reference or can be set externally
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ADL5315
ADL5315ACPZ-R7
ADL5315ACPZ-WP1,
ADL5315-EVAL
D05694â
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Keithley 236
Abstract: ADL5315 ADL5306 AD8067 AD8304 AD8305 AD8067 equivalent
Text: Precision Wide Range 3 nA to 3 mA High-Side Current Mirror ADL5315 FEATURES Accurately mirrors input current (1:1 ratio) over 6 decades Linearity 1% from 3 nA to 3 mA Stable mirror input voltage Voltage held 1 V below supply using internal reference or can be set externally
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ADL5315
ADL5315ACPZ-R7
ADL5315ACPZ-WP1,
ADL5315-EVAL
D05694
Keithley 236
ADL5315
ADL5306
AD8067
AD8304
AD8305
AD8067 equivalent
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN8317 Monolithic Digital IC LB11876 For Polygonal Mirror Motors Three-Phase Brushless Motor Driver Overview The LB11876 is a 3-phase brushless motor driver developed for driving the polygonal mirror motor in plain-paper copiers and similar products. It can support any motor voltage and motor current required by the use of appropriate external
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EN8317
LB11876
LB11876
LB11875
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LB11876
Abstract: LB11875 SSOP36 EN8317
Text: Ordering number : EN8317 Monolithic Digital IC LB11876 For Polygonal Mirror Motors Three-Phase Brushless Motor Driver Overview The LB11876 is a 3-phase brushless motor driver developed for driving the polygonal mirror motor in plain-paper copiers and similar products. It can support any motor voltage and motor current required by the use of appropriate external
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EN8317
LB11876
LB11876
LB11875
SSOP36
EN8317
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NTMF4834NS
Abstract: sensefet CAT2300 marking f3t NTMFS4833NST1G CAT2300VP2-GT3 marking code E2 logic gate vk marking 6 pin ic
Text: CAT2300 Current Mirror and Switch Controller for SENSEFET MOSFETs Description CAT2300 is a controller for SENSEFET MOSFET current monitoring in high-side switch applications. CAT2300 provides current mirroring and ON/OFF control for SENSEFET MOSFETs. Exact control and matching of the Sense
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CAT2300
NTMFS4833NST1G,
NTMFS4854NST1G
CAT2300/D
NTMF4834NS
sensefet
marking f3t
NTMFS4833NST1G
CAT2300VP2-GT3
marking code E2 logic gate
vk marking 6 pin ic
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n6302
Abstract: n6302 mosfet AN569 NIMD6302R2
Text: NIMD6302R2 HDPlus Dual N−Channel Self−protected Field Effect Transistors with 1:200 Current Mirror FET HDPlus devices are an advanced HDTMOS series of power MOSFET which utilize ON’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while
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NIMD6302R2
NIMD6302R2/D
n6302
n6302 mosfet
AN569
NIMD6302R2
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Current Mirror FET
Abstract: n6302
Text: NIMD6302R2 Dual N-Channel Self-protected Field Effect Transistors with 1:200 Current Mirror FET http://onsemi.com NIMD6302 is part of an advanced series of power MOSFET which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while
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NIMD6302R2
NIMD6302
NIMD6302R2/D
Current Mirror FET
n6302
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N6302
Abstract: n6302 mosfet AN569 NIMD6302R2 SMD310 FET Sense
Text: NIMD6302R2 HDPlus Dual N-Channel Self-protected Field Effect Transistors with 1:200 Current Mirror FET HDPlus devices are an advanced HDTMOS series of power MOSFET which utilize ON’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area while
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NIMD6302R2
r14525
NIMD6302R2/D
N6302
n6302 mosfet
AN569
NIMD6302R2
SMD310
FET Sense
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n6302
Abstract: n6302 mosfet mosfet current mirror AN569 NIMD6302R2 marking code AYWW FET Sense
Text: NIMD6302R2 HDPlus Dual N-Channel Self-protected Field Effect Transistors with 1:200 Current Mirror FET http://onsemi.com HDPlus devices are an advanced series of power MOSFET which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while
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NIMD6302R2
NIMD6302R2/D
n6302
n6302 mosfet
mosfet current mirror
AN569
NIMD6302R2
marking code AYWW
FET Sense
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n6302
Abstract: No abstract text available
Text: NIMD6302R2 HDPlus Dual N-Channel Self-protected Field Effect Transistors with 1:200 Current Mirror FET HDPlus devices are an advanced HDTMOS series of power MOSFET which utilize ON’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while
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NIMD6302R2
n6302
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Untitled
Abstract: No abstract text available
Text: NIMD6302R2 Dual N-Channel Self-protected Field Effect Transistors with 1:200 Current Mirror FET http://onsemi.com NIMD6302 is part of an advanced series of power MOSFET which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while
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NIMD6302R2
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WJ transistor
Abstract: FP2189 THEORY FP1189 FP31QF two transistors matched transistors
Text: Application Note The Communications Edge TM Active-Bias Constant-Current Source Recommended for WJ HFET devices An optional active-bias current mirror is recommended for use with the application circuits shown in WJ’s FP1189 and FP2189 datasheets. All WJ HFET’s require a negative gate voltage with a positive drain voltage.
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FP1189
FP2189
FP2189
FP31QF
1-800-WJ1-4401
WJ transistor
THEORY
FP31QF
two transistors
matched transistors
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Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE DS3923 High-Speed Current Mirror with Sample/Hold Output General Description Features ●● Supports -32dBm to -5dBm Optical Input Range with ±0.5dB Accuracy ●● 15V to 76V APD Bias ●● Pin Discharge Option ●● Sampling Period as Short as 300ns
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DS3923
-32dBm
300ns
24-Pin
DS3923
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Untitled
Abstract: No abstract text available
Text: EVALUATION KIT AVAILABLE DS3923 High-Speed Current Mirror with Sample/Hold Output General Description Features ●● Supports -32dBm to -5dBm Optical Input Range with ±0.5dB Accuracy ●● 15V to 76V APD Bias ●● Pin Discharge Option ●● Sampling Period as Short as 300ns
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DS3923
-32dBm
300ns
24-Pin
DS3923
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ICL8062
Abstract: LED Driver add 5201 camera 24 pin ICL8061 ATIC 39 b4 8062C 5201 IC schematic diagram of ip camera sensor circuit diagram of pill camera
Text: ICL8061/8062 Camera Exposure Control Circuits FEATURES • 50pA to 500/iA photocell current range • Low power dissipation • Track & hold ckt for mirror-up or exposure memory use. • Direct linearized inputs for aperture values, sensitivity, manual shutter speed, etc.
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ICL8061/8062
500/iA
ICL8061
8061/D
ICL8062
LED Driver add 5201
camera 24 pin
ATIC 39 b4
8062C
5201 IC
schematic diagram of ip camera sensor
circuit diagram of pill camera
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