l4962a
Abstract: L4962E Diode BYW 56
Text: SGS-THOMSON L4962 1.5A POWER SWITHING REGULATOR PRELIMINARY DATA • • • !• • • • • • 1.5A OUTPUT CU RREN T 5.1V TO 40V OUTPUT V O LTA G E RANGE PRECISE ± 2% ) ON-CHIP R EFER EN C E HIGH SWITCHING FREQ U EN CY V E R Y HIGH E F F IC IE N C Y (UP TO 90%)
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L4962
150KHz
L4962
l4962a
L4962E
Diode BYW 56
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JY 222 M capacitor
Abstract: No abstract text available
Text: SGS-THOMSON HLimiSiraB ® L4962 1.5A POWER SWITHING REGULATOR P R E L IM IN A R Y D A T A ' 1.5A O U T P U T C U R R E N T | 5.1V TO 40V O U T P U T V O L T A G E R A N G E ' P R E C IS E ± 2 % ON-CHIP R E F E R E N C E ' H IG H S W IT C H IN G F R E Q U E N C Y
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L4962
JY 222 M capacitor
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Untitled
Abstract: No abstract text available
Text: Æ 7 *7 Æ U S C S - T H O M S O N [* [^ & E m r [iM 0 (g § L4962 1.5A POWER SWITHING REGULATOR P R E L IM IN A R Y D A TA • 1.5 A O U T P U T C U R R E N T • 5 .1 V T O 4 0 V O U T P U T V O L T A G E R A N G E • P R E C IS E ( ± 2 % O N -C H IP R E F E R E N C E
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L4962
35/Lt
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hep 230
Abstract: L4962E
Text: SCS-THOMSON L4962 lu 1.5A POWER SWITHING REGULATOR P R E L IM IN A R Y D A T A • 1.5A O U TPUT C U R R E N T • 5.1V TO 40V O UTPUT V O L T A G E RANGE • PRECISE ± 2 % O N-CHIP REFERENCE • • H IG H SW ITCHING FREQ U EN C Y V E R Y HIG H E F F IC IE N C Y (UP TO 90% )
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L4962
150KHz
L4962
hep 230
L4962E
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 2 150 SILICON N CHANNEL MGS TYPE t i -M O S T T TECHNICAL DATA HIGH SPEED. HIGH CURRENT SWITHING APPLICATIONS. CHOPPER REGULATOR. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS
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2SK2150
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buz10
Abstract: No abstract text available
Text: / = 7 SGS-THOMSON ^TÆ, M œ m itgTM O igi BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE V DSS R DS on BUZ10 50 V 0.08 Q 20 A • HIGH SPEED SWITHING • LOW Rds (0N) • EASY DRIVE FOR COST EFFECTIVE APPLICATIONS. INDUSTRIAL APPLICATIONS:
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BUZ10
10OA/juS
buz10
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schematic diagram reverse forward motor
Abstract: No abstract text available
Text: i^ 7 SCS-THOMSON BUZ 10 ^ 7 #, HD @ilLI OT©iD©Ì N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE V DSS RDS(on BUZ10 50 V 0.08 Q Id 20 A • HIGH SPEED SWITHING • LOW R ds (0N) • EASY DRIVE FOR COST EFFECTIVE APPLICATIONS. INDUSTRIAL APPLICATIONS'.
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BUZ10
schematic diagram reverse forward motor
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN5051 FX208 N-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX208] Swithing Time Test CIrcuit 1:No Contact 2:Gate
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EN5051
FX208
FX208]
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EN5051
Abstract: No abstract text available
Text: Ordering number:EN5051 FX208 N-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX208] Swithing Time Test CIrcuit 1:No Contact 2:Gate
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EN5051
FX208
FX208]
EN5051
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2SK2150
Abstract: k2150
Text: TOSHIBA SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 2 150 SILICON N CHANNEL MOS TYPE TECHNICAL DATA t i -M O STT HIGH SPEED.HIGH CURRENT SWITHING APPLICATIONS. CHOPPER REGULATOR. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS
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2SK2150
k2150
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2SK2055
Abstract: ic 365 C10535E MEI-1202 current Source Swithing 2sk2055 transistor
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2055 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2055 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS in mm is a switching element that can be directly driven by the output of 5.7 ±0.1 2.0 ±0.2
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2SK2055
2SK2055
ic 365
C10535E
MEI-1202
current Source Swithing
2sk2055 transistor
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2SK2055
Abstract: C10535E MEI-1202
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2sk2055
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK3019
Abstract: current Source Swithing
Text: EM6K1 Transistor Small switching 30V, 0.1A EM6K1 !External dimensions (Units : mm) !Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half.
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2SK3019
100mA)
current Source Swithing
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2TR13
Abstract: 2SK3019
Text: EM6K1 Transistor Small switching 30V, 0.1A EM6K1 !External dimensions (Units : mm) !Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half.
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2SK3019
100mA)
2TR13
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JAPAN transistor
Abstract: 30v N channel MOS FET 2SK3019 ON503
Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating
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2SK3019
100mA)
JAPAN transistor
30v N channel MOS FET
ON503
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Untitled
Abstract: No abstract text available
Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating
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2SK3019
100mA)
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Untitled
Abstract: No abstract text available
Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating
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2SK3019
100mA)
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EM6K6
Abstract: No abstract text available
Text: EM6K6 EM6K6 Transistor 1.8V Drive Nch+Nch MOSFET EM6K6 zStructure Silicon N-channel MOSFET zDimensions Unit : mm EMT6 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half.
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Untitled
Abstract: No abstract text available
Text: EM6K6 Transistor 1.8V Drive Nch+Nch MOSFET EM6K6 zStructure Silicon N-channel MOSFET zDimensions Unit : mm EMT6 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half.
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SC2344
Abstract: 41L3
Text: SANYO SEMICONDUCTOR CORP 12E D g 7 cn707l=i 0D0 41L.3 2SC2344 Epitaxial Planar Silicon Transistors N P N / pnp 2010A High Voltage Switching, A F 100W Driver Applications 2SA1011 544E : 2SA1011 Ha» 1m » Ratings at Ta=25°C Collector to Base Voltage CBO
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cn707l
2SC2344
2SA1011
2SA1011
IS-126
1S-126A
IS-20MA
IS-313
IS-313A
SC2344
41L3
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em6k7
Abstract: No abstract text available
Text: 1.2V Drive Nch+Nch MOSFET EM6K7 zDimensions Unit : mm zStructure Silicon N-channel MOSFET EMT6 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low voltage drive (1.2V) makes this device ideal for
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R0039A
em6k7
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Untitled
Abstract: No abstract text available
Text: 1.2V Drive Nch+Nch MOSFET EM6K7 Structure Silicon N-channel MOSFET Dimensions Unit : mm EMT6 Applications Switching Features 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low voltage drive (1.2V) makes this device ideal for
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R0039A
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Untitled
Abstract: No abstract text available
Text: 1.2V Drive Nch+Nch MOSFET EM6K7 zStructure Silicon N-channel MOSFET zDimensions Unit : mm EMT6 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low voltage drive (1.2V) makes this device ideal for
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R0039A
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