CY62148E
Abstract: CY62148ELL-45ZSXI CY62148B CY62148ELL CY62148ELL-55SXA CY62148ELL-55SXI CY62148e CY62148b
Text: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description [1] Features • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current.
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CY62148E
CY62148ELL-45ZSXI
CY62148B
CY62148ELL
CY62148ELL-55SXA
CY62148ELL-55SXI
CY62148e CY62148b
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CY62148E
Abstract: CY62148ELL-55SXE CY62148e CY62148b
Text: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62148E is a high-performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.
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CY62148E
CY62148B
32-pin
CY62148ELL-55SXE
CY62148e CY62148b
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CY62148E
Abstract: No abstract text available
Text: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description[1] Features • Very high speed The CY62148E is a high-performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.
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CY62148E
CY62148B
32-pin
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CY62148E
Abstract: No abstract text available
Text: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62148E is a high-performance CMOS static RAMs organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.
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CY62148E
CY62148B
32-pin
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CY62148E
Abstract: CY62148B CY62148ELL CY62148ELL-45ZSXI CY62148ELL-55SXI 330281
Text: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This
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CY62148E
CY62148B
CY62148ELL
CY62148ELL-45ZSXI
CY62148ELL-55SXI
330281
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CY62148E
Abstract: No abstract text available
Text: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description [1] Features • • • • Very high speed: 45 ns Voltage range: 4.5V–5.5V Pin compatible with CY62148B Ultra low standby power The CY62148E is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features
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CY62148E
CY62148B
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CY62148E
Abstract: CY62148ELL-55SXI
Text: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description [1] Features • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current.
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CY62148E
CY62148B
32-pin
CY62148ELL-55SXI
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CY62148E
Abstract: CY62148B CY62148ELL CY62148ELL-45ZSXI CY62148ELL-55SXI 249276
Text: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This
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CY62148E
CY62148B
CY62148ELL
CY62148ELL-45ZSXI
CY62148ELL-55SXI
249276
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PDF
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CY62148E
Abstract: CY62148e CY62148b
Text: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This
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CY62148E
CY62148e CY62148b
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CY62148E
Abstract: No abstract text available
Text: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features advanced circuit design to provide ultra low standby current. This is ideal for providing More Battery Life (MoBL) in portable applications. The device also has an automatic power-down
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CY62148E
CY62148B
32-pin
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CY62148E
Abstract: cy62148ell-45z CY62148ELL-55SXI
Text: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ■ Voltage range: 4.5 V to 5.5 V ■ Pin compatible with CY62148B ■ Ultra low standby power ❐ Typical standby current: 1 µA
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CY62148E
cy62148ell-45z
CY62148ELL-55SXI
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CY62148E
Abstract: CY62148B CY62148DV30 CY62148ELL CY62148ELL-55SXA CY62148ELL-55SXI CY62148EV30 CY62148EV30LL CY62148EV30LL-55SXI AN13470
Text: Clarification on VIL Spec for 90 nm 4M MoBL SRAMs SOIC Packages AN13470 Author: Anuj Chakrapani Associated Project: No Associated Part Family: CY62148E / CY62148EV30 Software Version: None Associated Application Notes: None Abstract AN13470 discusses the VIL input low voltage specification for the 90 nm 4M CY62148ELL-55SXI, CY62148ELL-55SXA and
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AN13470
CY62148E
CY62148EV30
AN13470
CY62148ELL-55SXI,
CY62148ELL-55SXA
CY62148EV30LL-55SXI
CY62148ELL-55SXA
CY62148B
CY62148DV30
CY62148ELL
CY62148ELL-55SXI
CY62148EV30
CY62148EV30LL
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CY62148E
Abstract: No abstract text available
Text: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features advanced circuit design to provide ultra low standby current. This is ideal for providing More Battery Life (MoBL) in portable applications. The device also has an automatic power-down
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CY62148E
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TC554161A
Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA
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BH62UV4000
BH616UV4010
BH62UV8000
BH616UV8010
BH62UV1600
BH616UV1610
TC55V4000
TC55VEM208ASTN
T16LV8017
K6X8008T2B
TC554161A
HY62WT08081E
K6X8008C2B
CY62148E
r1lv0416
K6F1616
k6t0808c1d
BH616UV4010
BH616UV8010
BH62UV4000
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