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    CY7C1020 Search Results

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    CY7C1020 Price and Stock

    Rochester Electronics LLC CY7C1020B-15VCT

    IC SRAM 512KBIT PARALLEL 44SOJ
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    DigiKey CY7C1020B-15VCT Bulk 4,950 281
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    Rochester Electronics LLC CY7C1020B-12VXC

    IC SRAM 512KBIT PARALLEL 44SOJ
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    DigiKey CY7C1020B-12VXC Tube 2,011 202
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    Rochester Electronics LLC CY7C1020B-12VXCT

    IC SRAM 512KBIT PARALLEL 44SOJ
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    DigiKey CY7C1020B-12VXCT Bulk 1,500 198
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    Infineon Technologies AG CY7C1020DV33-10ZSXI

    IC SRAM 512KBIT PAR 44TSOP II
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    DigiKey CY7C1020DV33-10ZSXI Tray 1,488 1
    • 1 $6.42
    • 10 $5.694
    • 100 $5.299
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    Avnet Americas CY7C1020DV33-10ZSXI Tray 8 Weeks 540
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    Mouser Electronics CY7C1020DV33-10ZSXI 219
    • 1 $6.4
    • 10 $5.31
    • 100 $4.81
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    Verical CY7C1020DV33-10ZSXI 276 7
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    CY7C1020DV33-10ZSXI 230 5
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    CY7C1020DV33-10ZSXI 39 6
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    • 1000 $2.0008
    • 10000 $1.9953
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    Arrow Electronics CY7C1020DV33-10ZSXI 39 1
    • 1 $2.3254
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    • 100 $2.1331
    • 1000 $2.0008
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    Newark CY7C1020DV33-10ZSXI Bulk 270 1
    • 1 $6.51
    • 10 $5.79
    • 100 $5.18
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    Rochester Electronics CY7C1020DV33-10ZSXI 1
    • 1 $4.24
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    • 100 $3.99
    • 1000 $3.6
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    Chip1Stop CY7C1020DV33-10ZSXI Tray 276
    • 1 $3.9
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    New Advantage Corporation CY7C1020DV33-10ZSXI 270 1
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    Infineon Technologies AG CY7C1020DV33-10ZSXIT

    IC SRAM 512KBIT PAR 44TSOP II
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    DigiKey CY7C1020DV33-10ZSXIT Digi-Reel 850 1
    • 1 $6.42
    • 10 $5.694
    • 100 $5.0529
    • 1000 $4.64706
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    CY7C1020DV33-10ZSXIT Cut Tape 850 1
    • 1 $6.42
    • 10 $5.694
    • 100 $5.0529
    • 1000 $4.64706
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    Avnet Americas CY7C1020DV33-10ZSXIT Reel 8 Weeks 1,000
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    Mouser Electronics CY7C1020DV33-10ZSXIT
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    EBV Elektronik CY7C1020DV33-10ZSXIT 9 Weeks 1,000
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    CY7C1020 Datasheets (178)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C1020 Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020 Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020-10VC Cypress Semiconductor 32K x 16 static RAM, 10ns Original PDF
    CY7C1020-10VC Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020-10VC Cypress Semiconductor 32K x 16 Static RAM Scan PDF
    CY7C1020-10ZC Cypress Semiconductor 32K x 16 static RAM, 10ns Original PDF
    CY7C1020-10ZC Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020-10ZC Cypress Semiconductor 32K x 16 Static RAM Scan PDF
    CY7C1020-12VC Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020-12VC Cypress Semiconductor 32K x 16 static RAM, 12ns Original PDF
    CY7C1020-12VC Cypress Semiconductor 32K x 16 Static RAM Scan PDF
    CY7C1020-12ZC Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020-12ZC Cypress Semiconductor 32K x 16 static RAM, 12ns Original PDF
    CY7C1020-12ZC Cypress Semiconductor 32K x 16 Static RAM Scan PDF
    CY7C1020-15VC Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020-15VC Cypress Semiconductor 32K x 16 static RAM, 15ns Original PDF
    CY7C1020-15VC Cypress Semiconductor 32K x 16 Static RAM Scan PDF
    CY7C1020-15ZC Cypress Semiconductor 32K x 16 static RAM, 15ns Original PDF
    CY7C1020-15ZC Cypress Semiconductor 32K x 16 Static RAM Original PDF
    CY7C1020-15ZC Cypress Semiconductor 32K x 16 Static RAM Scan PDF
    ...

    CY7C1020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C1020

    Abstract: No abstract text available
    Text: Y7C10 PRELIMINARY CY7C1020 32K x 16 Static RAM Features BLE is LOW, then data from I/O pins (I/O 1 through I/O8), is written into the location specified on the address pins (A0 through A 14). If byte high enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A14).


    Original     		PDF Y7C10 CY7C1020 I/O16) 44-pin 400-mil 44-Lead 400-Mil) CY7C1020-15ZC 44-Lead CY7C1020L-15ZC CY7C1020

    CY7C1020B

    Abstract: No abstract text available
    Text: 020B CY7C1020B 32K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1020B I/O16) 44-pin CY7C1020B

    CY7C1020CV33

    Abstract: CY7C1020V33
    Text: CY7C1020CV33 512K 32K x 16 Static RAM Features Functional Description • Pin- and function-compatible with CY7C1020V33 • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C The CY7C1020CV33 is a high-performance CMOS static


    Original     		PDF CY7C1020CV33 CY7C1020V33 CY7C1020CV33 CY7C1020V33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1020B 32K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1020B 44-pin 44-pin 400-mil) I/O16) CY7C1020B

    Untitled

    Abstract: No abstract text available
    Text: CY7C1020CV33 512K 32K x 16 Static RAM Features Functional Description • Pin- and function-compatible with CY7C1020V33 • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C The CY7C1020CV33 is a high-performance CMOS static


    Original     		PDF CY7C1020CV33 CY7C1020V33 44-pin CY7C1020CV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1020DV33 512 K 32 K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption when deselected. • Pin-and function-compatible with CY7C1020CV33 ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 60 mA @ 10 ns


    Original     		PDF CY7C1020DV33 I/O15)

    CY7C1020CV33

    Abstract: CY7C1020DV33
    Text: CY7C1020DV33 512K 32K x 16 Static RAM Features • Pin-and function-compatible with CY7C1020CV33 • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10 ns • Low CMOS standby power • • • • • — ISB2 = 3 mA 2.0V Data retention


    Original     		PDF CY7C1020DV33 CY7C1020CV33 44-pin 400-Mil CY7C1020DV33 CY7C1020CV33

    CY7C1020CV33-15ZXI

    Abstract: CY7C1020CV33 CY7C1020V33
    Text: CY7C1020CV33 512K 32K x 16 Static RAM Features Functional Description • Pin- and function-compatible with CY7C1020V33 • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C The CY7C1020CV33 is a high-performance CMOS static


    Original     		PDF CY7C1020CV33 CY7C1020V33 CY7C1020CV33 CY7C1020CV33-15ZXI CY7C1020V33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1020CV33 512 K 32 K x 16 Static RAM 512 K (32 K × 16) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1020CV33 ■ Temperature Ranges ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive: –40 °C to 125 °C


    Original     		PDF CY7C1020CV33 CY7C1020CV33 I/O16)

    SOJ 44

    Abstract: 84-1MISR4 CY7C1020 CY7C1020V33 EME-6300 JESD22 ASE Cypress Qualification
    Text: Cypress Semiconductor Qualification Report QTP# 97044, VERSION 1.0 July, 1997 32K x 16 SRAM, R3 Technology, Fab 4 Qualification CY7C1020 CY7C1020V33 32K x 16, 5V Static RAM 32K x 16, 3.3V Static RAM Cypress Semiconductor 32K x 16 SRAM, R3 Technology, Fab 4


    Original     		PDF CY7C1020 CY7C1020V33 CY7C1020/CY7C1020V33 44-pin, CY7C1020-VC 30C/60 SOJ 44 84-1MISR4 CY7C1020 CY7C1020V33 EME-6300 JESD22 ASE Cypress Qualification

    CY7C1020BN

    Abstract: No abstract text available
    Text: CY7C1020BN 32K x 16 Static RAM Features Functional Description • High speed The CY7C1020BN is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected.


    Original     		PDF CY7C1020BN CY7C1020BN 44-pin 400-mil

    Untitled

    Abstract: No abstract text available
    Text: 020CY7C10 CY7C1020 32K x 16 Static RAM Features BLE is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A14). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location


    Original     		PDF 020CY7C10 CY7C1020 I/O16) 44-pin 400-mil CY7C1020

    Untitled

    Abstract: No abstract text available
    Text: CY7C1020CV33 32K x 16 Static RAM Features • Pin- and function-compatible with CY7C1020BV33 • High speed — tAA = 8, 10, 12, 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Automatic power-down when deselected • Independent control of upper and lower bits


    Original     		PDF CY7C1020CV33 CY7C1020BV33 44-pin 400-mil CY7C1020CV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1020CV26 512Kb 32K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1020CV26 512Kb 44-pin I/O16)

    Untitled

    Abstract: No abstract text available
    Text: CY7C1020BN 32K x 16 Static RAM Features Functional Description • High speed The CY7C1020BN is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected.


    Original     		PDF CY7C1020BN 44-pin 400-mil CY7C1020BN

    Untitled

    Abstract: No abstract text available
    Text: CY7C1020D 512K 32K x 16 Static RAM Features • Pin- and function-compatible with CY7C1020B • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10ns • Low CMOS Standby Power • • • • • — ISB2 = 3 mA 2.0V Data Retention Automatic power-down when deselected


    Original     		PDF CY7C1020D CY7C1020B 44-pin 400-Mil I/O16 I/O15 83MHz, 66MHz 40MHz

    CY7C1020CV26

    Abstract: CY7C1020CV26-15ZSXE
    Text: CY7C1020CV26 512 Kb 32 K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable (CE) and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1020CV26 I/O16) CY7C1020CV26 CY7C1020CV26-15ZSXE

    TSOP 66 Package thermal resistance

    Abstract: No abstract text available
    Text: CY7C1020D 512K 32K x 16 Static RAM Features Functional Description [1] • Pin- and function-compatible with CY7C1020B ■ High speed The CY7C1020D is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power


    Original     		PDF CY7C1020D CY7C1020D CY7C1020B TSOP 66 Package thermal resistance

    CY7C1020B-15ZXC

    Abstract: CY7C1020B
    Text: CY7C1020B 32K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1020B I/O16) 44-pinAM CY7C1020B-15ZXC CY7C1020B

    A10C

    Abstract: A14C CY7C1020
    Text: fax id: 1074 PRELIMINARY CY7C1020 WO YPHESS 32K Features BLE is LOW, then da ta from I/O pins (l/O-i thro u g h l/Og), is w ritten into the location specified on the address pins (A 0 throu gh A 1 4 ). If byte high enable (BHE) is LOW, then da ta from I/O pins (l/Og throu gh l/O-ie) is w ritten into the location sp e ci­


    OCR Scan     		PDF 44-pin 400-mil CY7C1020 CY7C1020 A10C A14C

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1075 CY7C1020V _ Features 32Kx 16 Static RAM BLE is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq through A 1 4 ). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through l/0-|6) is written into the location speci­


    OCR Scan     		PDF CY7C1020V

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C1020 3 2 K x 16 Static RAM Features BLE is LOW, then data from I/O pins <l/0-| through l/0 8), is written into the location specified on the address pins (A0 through A14). If byte high enable (BHE) is LOW, then data from I/O pins (l/09 through l/0 16) is written into the location speci­


    OCR Scan     		PDF CY7C1020 44-pin 400-mil

    A14C

    Abstract: CY7C1020V
    Text: fax id: 1075 ^ ;a a a z g g s t CY7C1020V PRELIMINARY ; U I F lm ß b ö 32K Features 16 Static RAM X BLE is LOW, then da ta from I/O pins (l/O-j throu gh l/ 0 8), is w ritten into the location specified on th e address pins (A 0 throu gh A-| 4 ). If byte high en ab le (BH E) is LOW, then da ta from


    OCR Scan     		PDF 44-pin 400-mil CY7C1020V A14C

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1075 CY7C1020V _ 3 2 K x 16 Static RAM BLE is LOW, then data from I/O pins (l/O-j through l/0 8), is written into the location specified on the address pins (A0 through A 14). If byte high enable (BHE) is LOW, then data from I/O pins (l/0 9 through l/O i6) is written into the location speci­


    OCR Scan     		PDF CY7C1020V 44-pin 400-mil