CY7C1021V30
Abstract: CY7C1021V30-15BSI
Text: fax id: 1083 1CY 7C10 21 V ADVANCED INFORMATION CY7C1021V30 64K x 16 Static RAM Features • 3.0V operation 2.7V–3.3V • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low active power (L version) — 462 mW (max.) • Low CMOS Standby Power (L version)
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CY7C1021V30
CY7C1021V30
CY7C1021V30-15BSI
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Untitled
Abstract: No abstract text available
Text: CY7C1021V30 64K x 16 Static RAM Features • 3.0V operation 2.7V–3.3V • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low active power (L version) — 462 mW (max.) • Low CMOS Standby Power (L version) — 1.65 mW (max.) • Automatic power-down when deselected
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CY7C1021V30
48-ball
I/O16)
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CY7C1021V30
Abstract: No abstract text available
Text: fax id: 1083 PRELIMINARY CY7C1021V30 64K x 16 Static RAM Features • 3.0V operation 2.7V–3.3V • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low active power (L version) — 462 mW (max.) • Low CMOS Standby Power (L version) — 1.08 mW (max.)
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CY7C1021V30
CY7C1021V30
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verilog for SRAM 512k word 16bit
Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
Text: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18
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7C148
7C149
7C150
7C167A
7C168A
7C128A
7C187
7C164
7C166
7C185
verilog for SRAM 512k word 16bit
CY62512V
CYM74P436
192-Macrocell
62128 sram
7C1350
Triton P54C
palce16v8 programming guide
7C168A
intel 16k 8bit RAM chip
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CY7C1021V30
Abstract: CY7C1021V30-15BAI
Text: CY7C1021V30 64K x 16 Static RAM Features W riting to the device is a cco m plished by takin g C hip Enable CE and W rite Enable (W E) inputs LOW. If Byte Low Enable (BLE) is LOW, then da ta from I/O pins (l/O-i throu gh l/Og), is w ritten into the location specified on th e address pins (A0
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CY7C1021V30
48-ball
CY7C1021V30
CY7C1021V30-15BAI
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Untitled
Abstract: No abstract text available
Text: fax id: 1083 C 'i- PRELIMINARY CY7C1021V30 64K Features X 16 Static RAM Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BEE) is LOW, then data from I/O pins (l/Oi through l/0 8), is written into the location specified on the address pins (A0
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CY7C1021V30
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b548
Abstract: CY7C1021V30 CY7C1021V30-15BSI CY7C1021V30L-15BSI
Text: fax id: 1083 ADVANCED INFORMATION ^;aaazgg s t CY7C1021V30 ; U I F lm ß b ö 64K Features X 16 Static RAM Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/O-i through l/0 8), is
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CY7C1021V30
CY7C1021V30
b548
CY7C1021V30-15BSI
CY7C1021V30L-15BSI
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Untitled
Abstract: No abstract text available
Text: fax id: 1083 PRELIMINARY CY7C1021V30 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/0-| through l/Og), is written into the location specified on the address pins (Aq
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CY7C1021V30
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Untitled
Abstract: No abstract text available
Text: fax id: 1083 C Y 7 C 1 0 2 1 V 3 0 64K X 16 Static RAM Writing to the device is accomplished by taking chip enable UE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins ( l/0 1 through l/0 8), is written into the location specified on the address pins (A0
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Untitled
Abstract: No abstract text available
Text: C Y 7 C 1021 V 30 CYPRESS 64K x 16 Static RAM Features W riting to the device is a c c o m plished by takin g C hip Enable CE and W rite Enable (W E) inputs LOW. If Byte Low Enable (BLE) is LOW, then da ta from I/O pins (l/0-| throu gh l/Og), is w ritten into the location spe cifie d on th e address pins (A0
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Untitled
Abstract: No abstract text available
Text: fax id: 1083 W CYPRESS ADVANCED INFORMATION C Y 7 C 10 2 1 V 30 64K x 16 Static RAM Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/0-| through l/0 8), is
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