1A359
Abstract: IR LED MITEL ON SEMICONDUCTOR 613 top marking 293 1A354
Text: PRODUCT INFORMATION 780nm 1A359 H igh-Performance LED The low thermal droop of this device allows baseband video transmission with minimum distortion. The double-lens optical system provides for optimum coupling of power into the fiber. It matches with the 1A354 PIN
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780nm
1A359
1A354
1-800-96MITEL
1A359
IR LED MITEL
ON SEMICONDUCTOR 613
top marking 293
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Untitled
Abstract: No abstract text available
Text: P R O D U C T INFORMATION 1A458 VCSB_ Laser Diode This High-Power VCSEL Vertical Cavity Surface-Em itting Laser is designed for Industrial and sensors applications. It operates in multiple transverse and single longitudinal mode, ensuring stable output power
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1A458
1-800-96M
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1291
Abstract: nk1j
Text: P R O D U C T IN F O R M A T IO N VCSB_ Laser Diode T h is V e rtic a l C a v ity S u rfa c e Emitting Laser is designed for Fibre Channel, Gigabit Ethernet, ATM and general applications. It incorporates a photodiode to m onitor the optical power and allow for feedback control.
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840nm
1-800-96MITEL
1291
nk1j
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w140 diode
Abstract: ON SEMICONDUCTOR 613 top marking 293 1A239 W140 R111H
Text: PRODUCT INFORMATION 840 nrn 1A239 H igh-Ferfor mance LED This device is designed for Ethernet and general applications and offers an excellent price/performance ratio for cost-effective solutions. Since it oper ates at low drive current, it generates m inim al h e a t — red u c in g co o lin g
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1A239
1-800-96MITEL
w140 diode
ON SEMICONDUCTOR 613
top marking 293
1A239
W140
R111H
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Diode dx 2A
Abstract: ON SEMICONDUCTOR 613 top marking 293 2B454
Text: PRODUCT INFORMATION VCSB_ Laser Diode T h is V e rtic a l C a v ity S u rfa c e Emitting Laser is designed for Fibre Channel, Gigabit Ethernet, ATM and general applications. It incorporates a photodiode to m onitor the optical power and allow for feedback control.
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840nm
1-800-96MITEL
Diode dx 2A
ON SEMICONDUCTOR 613
top marking 293
2B454
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Untitled
Abstract: No abstract text available
Text: PRODUCT INFORMATION VCSB_ Laser Diode T his V ertical C avity SurfaceEmitting Laser is designed for Fibre Channel, Gigabit Ethernet, ATM and general applications. It incorporates a photodiode to m onitor the optical power and allow for feedback control. Datacom
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840nm
1-800-96MITEL
2B482
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H71EE
Abstract: RJ 49 2SK1586 BH RV transistor TF230
Text: MOS M O S Field Effe ct T ra n sisto r 2SK1586 N- 9 - V * J U 2SK1586 ìi, i c < v & t ! ^ £ N FET MOS FET T', 5 V f i S I -y - f > t & MOS FET li * r m ? T t ') U — y 1/ ; , ^ - { î : mm) . <, X ^ Ì 7 f > i - ? , # MOS i, m l.5 ± 0 .l A r o 5 V « i l * IC
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2SK1586
2SK1586
60iti
iMnEt83Â
H71EE
RJ 49
BH RV transistor
TF230
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al600
Abstract: IR LED 810 nm ON SEMICONDUCTOR 613 top marking 293 1A272 W140 TO46 package LED 1300 nm
Text: PRODUCT INFORMATION -J 81 Orín Jk 1A272 High-Berformance LH3 This high speed device is optimized at 810 nm w avelength w hich is of particular interest for use in radia tion-hardened fiber. It operates in a wide temperature range and delivers very high power to 200 pm core fiber,
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1A272
100mA
1-800-96MITEL
al600
IR LED 810 nm
ON SEMICONDUCTOR 613
top marking 293
1A272
W140
TO46 package LED 1300 nm
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IR LED MITEL
Abstract: ON SEMICONDUCTOR 613 Radial sma OPTICAL FIBER top marking 293 1A277A 5CV1
Text: PRODUCT INFORMATION 880nm 1A277A High-Performance LED The low harmonic distortion and low thermal droop makes this device ideal for subcarrier FM and baseband video applications. Video transmission can be accomplished with minimum dis tortion. The double-lens optical sys
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880nm
1A277A
100mA
1-800-96MITEL
IR LED MITEL
ON SEMICONDUCTOR 613
Radial sma OPTICAL FIBER
top marking 293
1A277A
5CV1
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IR LED MITEL
Abstract: ON SEMICONDUCTOR 613 top marking 293 1A194
Text: P R O D U C T INFORMATION 1A194 High-Performance LED This device is designed for Ethernet and general applications and offers an excellent price/performance ratio for cost-effective solutions. Its doub le-len s op tical system resu lts in optimum coupling of power into the
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1A194
1-800-96MITEL
IR LED MITEL
ON SEMICONDUCTOR 613
top marking 293
1A194
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Untitled
Abstract: No abstract text available
Text: P R O D U C T INFORMATION 840nm 1A440 Datacom, General Purpose VCSB_ Laser Diode T h is V e rtica l C a v ity S u rfa ceEmitting Laser is designed for Fibre Channel, Gigabit Ethernet, ATM and general applications. It operates in multiple transverse and single longi
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1A440
840nm
1-800-96M
1A440
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2SK462
Abstract: 53-AS M71E
Text: NEC j N ^ 1 -^ ^ ' ^ ' 7 y — M O S ? - > F E T ? m oLm m N-Channel MOS Field Effect Power Transistor Switching Industrial Use Afflili]/PA C K A G E DIMENSIONS 2S K462Ü , Unit : mm FETT-, * 7 f > D C - D C 3 V '* — ? , w m v m t i r n à * ¿6 , ¡ÎJS ÎÆ
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2SK462
2SK462Ã
CycleSi50
2SK462
53-AS
M71E
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IR LED 810 nm
Abstract: w140 diode IR LED MITEL ON SEMICONDUCTOR 613 top marking 293 1A288 W140
Text: PRODUCT INFORMATION 840im 1A288 High-Performance LED This high speed device is optimized at 810 nm w avelength w hich is o f particular interest for use in radia tion-hardened fiber. It operates in a wide temperature range and delivers very high power to 200 pm core fiber,
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840nm
1A288
1-800-96MITEL
IR LED 810 nm
w140 diode
IR LED MITEL
ON SEMICONDUCTOR 613
top marking 293
1A288
W140
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IR LED MITEL
Abstract: ON SEMICONDUCTOR 613 top marking 293 1A229 S125
Text: PRODUCT INFORMATION 870nm 1A229 H igh-Ferfor mance LED This device operates at very low drive current, which makes it well suited for battery-operated equipment. In fact, it can be driven directly by TTL circuitry. Battery-Operated Equipment O p tical and B ectrical Characteristics
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870nm
1A229
1-800-96MITEL
IR LED MITEL
ON SEMICONDUCTOR 613
top marking 293
1A229
S125
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EB-230
Abstract: PA603T mpa603t 048164 IC830
Text: MOS MWRlto MOS Field Effect Transistor «PA603T U MOS F E T 6 fc> 2 0 S&) P ¿¿PA603T (ä, M OS F E T £ 2 H Jj& f ijl Ltz l ~ £ f 7f £ H I (^ -fï ‘ mm) & 4# o SC-59 ¿[p] L'+f'f Xcos'?"/ Y — 'si MOS F E T £ 2 H i& f lji 0.95 o ¿/PA602T t 3 > 7 ° ij / 's 9 ') T"i£ffl^Tit£
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uPA603T
PA603T
SC-59
/PA602T
EB-230
PA603T
mpa603t
048164
IC830
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lg 5528
Abstract: T1IS 2SA1206 PA33 pa33 rnm 2SA1206 transistor
Text: NEC '> < ZI > Silicon T r a n s is to r 2SA1206 P N P x . l £ f r j r $ ' 7 J U M $ s i ) z i > b :7 > i * X * «SSSÄX-f Ü f f l PNP Silicon Epitaxial Transistor High Speed Switching Industrial Use O X 'f y t on • 9.0 ns T Y P . , t s t g ^ 16 ns T Y P . ,
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2SA1206
o2SC2901
SC-43B
lg 5528
T1IS
2SA1206
PA33
pa33 rnm
2SA1206 transistor
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ON SEMICONDUCTOR 613
Abstract: top marking 293 1A225
Text: PRODUCT INFORMATION 1A225 H igh-Performance LED Com pared with lasers and ELEDs, this device can reduce device costs in single-mode Ethernet networks. And since it’s packaged in a hermeti-cally sealed can, it achieves high reliability even in h a rsh o p e ra tin g e n v iro n
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1A225
I0/I25
880te
1-800-96MITEL
ON SEMICONDUCTOR 613
top marking 293
1A225
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marking ED SMA
Abstract: ON SEMICONDUCTOR 613 top marking 293 1A255
Text: PRODUCT INFORMATION 860rm 1A255 H igh-Ferformance LED The low thermal droop of this device allows baseband video transmission with minimum distortion. The double-lens optical system provides for optimum coupling of power into the fiber. Baseband Video O p tica l and B e c trica l C h a ra cte ristics 25'cgbsTempsaiuiei
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860rm
1A255
5/l25jim
1-800-96MITEL
marking ED SMA
ON SEMICONDUCTOR 613
top marking 293
1A255
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Untitled
Abstract: No abstract text available
Text: PRODUCT INFORMATION 1320nm 1A427 High-Performance LED This is the ultimate in high speed for 1300 nm LED s. It is designed for ATM 622 M bps applications and offers an excellent price/performance ratio for cost-effective solutions. Its double-lens optical system results in
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1320nm
1A427
1-800-96M
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